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AP Questions - Resistance and Capacitance
AP Questions - Resistance and Capacitance

... 48. A wire of resistance R dissipates power P when a current I passes through it. The wire is replaced by another wire with resistance 3R. The power dissipated by the new wire when the same current passes through it is (A) P/9 (B) P/3 (C) P (D) 3P (E) 6P ...
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... The internal 2.5V bias generator (V2P5) provides the internal bias for the preamplifier stage. The external input capacitors and this internal reference allow the inputs to be biased within the optimal common-mode range of the input preamplifiers. The selection of the capacitor value on the V2P5 ter ...
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Aalborg Universitet Electrical Vehicle Design and Modeling Schaltz, Erik
Aalborg Universitet Electrical Vehicle Design and Modeling Schaltz, Erik

... internal voltage source and two inner resistances used for charging and discharging. The two diodes are ideal and have only symbolics meaning, i.e., to be able to shift between the charging and discharging resistances. Discharging currents are treated as positive currents, i.e., charging currents ar ...
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... Mode-2 begins when resonant inductor current ILr becomes positive. Since Q1 is turned on during mode 1, current will flow through MOSFET Q1. During this mode, output rectifier diode D1 conduct. The transformer voltage is clamped at Vo. Lm is linearly charged with output voltage, so it doesn't partic ...
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design_review

... and probed with an oscilloscope as shown below. This shows transmission of x02 with a start bit 1 and stop bit 0. When no data is being sent, the UART line is high and represented by a long string of 01s. The start bit creates a double baud length 1 pulse, resynchronizing the receiver with the incom ...
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... The term used for power lines operating in the range of 345 to 765 kV phase to phase. Such lines have been in operation since the 1960s. The term used for power lines operating above EHV levels. No lines of this class are operational, though test facilities have been constructed in several countries ...
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... The ZXSC400EV7 uses the circuit below. The target application is a 3W white LED being driven from two NiCd/NiMH batteries for torches, but the device is also excellent for general high powered LED driving. Q1 and Q2 form a pseudo-Darlington pair, which provides enough current gain for switching curr ...
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... The LT®1800 is a low power, high speed rail-to-rail input and output operational amplifier with excellent DC performance. The LT1800 features reduced supply current, lower input offset voltage, lower input bias current and higher DC gain than other devices with comparable bandwidth. The LT1800 has an ...
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... controlled. Each byte has separate control inputs which could be shorted together for full 16-bit operation. The T/R inputs determine the direction of data flow through the device. The OE inputs disable both the A and B Ports by placing them in a high impedance state. The LCXH16245 data inputs inclu ...
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... where J is the current density (the SI unit of current density are A/m 2 ). If q is the charge of each carrier, and n is the number of charge carriers per unit volume, the total amount of charge in this section is then ∆Q = q(nA ∆x) . Suppose that the charge carriers move with a speed vd ; then the ...
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... because they naturally behave as voltage sources as required by many industrial applications, such as adjustable speed drives (ASDs), which are the most popular application of inverters; see Fig 3.1. Similarly, these topologies can be found as current source inverters (CSIs), where the independently ...
Short-Circuit kVA
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... Generally, one feeder is fed from one generator only. Under normal operating conditions, each generator will supply its own section of the load and very little power will be fed by other generators. This results in low power loss and voltage drop in the reactors. However, the principal advantage of ...
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... feedback line after the optocoupler is integrated in the IC to reduce the external part count. Furthermore, a high voltage Startup Cell is integrated into the IC which is switched off once the Undervoltage Lockout on-threshold of 18V is exceeded. The external startup resistor is no longer necessary ...
MODEL3005A/3007A Instruction Manual
MODEL3005A/3007A Instruction Manual

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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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