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Electrical and mechanical accessories
Electrical and mechanical accessories

... Compact NS and Vigicompact NS devices with two, three or four poles may be installed in individual enclosures. All fixed, front connections are possible, except right-angle and edgewise terminal extensions. Spreaders may be installed in the enclosures intended for Interpact Compact and Vigicompact N ...
Influence of plasma density on associated
Influence of plasma density on associated

... The basics of plasma sheath interaction physics have various roles to play in fundamental research of confined plasmas [1–3] and in the development of plasma-based technology in industrial applications. The physical understanding of boundary wall–plasma interaction processes has become a subject of ...
LP5907 - Texas Instruments
LP5907 - Texas Instruments

... Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absol ...
Efficient Formulation and Model-Order Reduction for the Transient Simulation of Three-dimensional VLSI Interconnect,
Efficient Formulation and Model-Order Reduction for the Transient Simulation of Three-dimensional VLSI Interconnect,

... To overcome this difficulty, we derive a mixed surface-volume formulation and show how it prevents the magnification of the multipole error. In this formulation, the interior finitedifference method is used to solve Laplace’s equation inside the conductors, and the boundary-element method is used to ...
PowerPoint
PowerPoint

... – Covers material in Lectures 9 – 18 – Bring your ID: Rooms determined by discussion section (see link) ...
Bipolar Junction Transistor
Bipolar Junction Transistor

... There are two basic types of transistors : (1) the bipolar junction transistor (BJT) which we will study in this chapter and the field-effect transistor (FET) which is covered in chapter 13. The bipolar junction transistor is used in two broad areas of electronics : (1) as a linear amplifier to boos ...
Getting started with STM32F4xxxx MCU hardware development
Getting started with STM32F4xxxx MCU hardware development

... Boot modes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 STM32F4xxxx bootloader communication peripherals . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 ...
Comparison of two optimized readout chains for low
Comparison of two optimized readout chains for low

MAX3222E 数据资料 dataSheet 下载
MAX3222E 数据资料 dataSheet 下载

... Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to a ...
MAX3040–MAX3045 ±10kV ESD-Protected
MAX3040–MAX3045 ±10kV ESD-Protected

resistivity variation and temperature of a tungsten filament
resistivity variation and temperature of a tungsten filament

... operating at 6V. For a given voltage applied across the filament of the lamp, a steady state is reached when the current (I) passing through the filament is stabilized. In the steady state, it is expected that the electrical power input to the lamp is equal to the power lost by the filament through ...
SCCR Update Based on 2008 NEC ®
SCCR Update Based on 2008 NEC ®

... 1.Voltage Rating: be sure the voltage rating for an assembly is equal to or greater than the system voltage. When devices such as slash rated circuit breakers or motor controllers (ie 480/277) are used, the entire assembly is also limited. Per 240.85 and 430.83(E), a device, which is slash voltage r ...
Advanced Non-Inverting Step up/down Converter with LQR Control
Advanced Non-Inverting Step up/down Converter with LQR Control

... minimum input voltage(3SY) in the boost mode and the maximum input voltage(6SY) in the buck mode, respectively. Suddenly, load resistor changes from 1012 to 512 and after a short time returns to the original state. These tests done to evaluate transient stability of the proposed converter to these l ...
Electrical Installation Calculations: Advanced
Electrical Installation Calculations: Advanced

... is encouraged. Your calculator is a tool, and like any tool practice is required to perfect its use. A scientific calculator will be required, and although they differ in the way the functions are carried out, the end result is the same. The examples are given using a Casio fx-83MS. The figures printe ...
P84467
P84467

... When terminating field wires, do not use more lead length than required. Excess lead length could result in insufficient wiring space for the signaling appliance. Use care and proper techniques to position the field wires in the backbox so that they use minimum space and produce minimum stress on th ...
DAC108S085 - Texas Instruments
DAC108S085 - Texas Instruments

Diode - STEP
Diode - STEP

... direction). Thus, the diode can be thought of as an electronic version of a check valve. This unidirectional behavior is called rectification, and is used to convert alternating current to direct current, and remove modulation from radio signals in radio receivers. However, diodes can have more comp ...
ADuM1411 英文数据手册DataSheet下载
ADuM1411 英文数据手册DataSheet下载

... transitions. If an input data logic transition within a given channel does occur within this time interval, the output of that channel reaches the correct state within the much shorter duration as determined by the propagation delay specifications within this data sheet. Input disable time is the du ...
Detection circuit with dummy integrator to compensate for switch
Detection circuit with dummy integrator to compensate for switch

Snubber Circuits: Theory , Design and Application
Snubber Circuits: Theory , Design and Application

... if the impedance of the parasitic resonant circuit is known. The value of inductance is usually the leakage inductance of the transfonDer and can be estimated with some effort. The resistor value is set equal to the resulting characteristic impedance. It is always good practice to estimate the value ...
LP38798 800-mA Ultra-Low-Noise, High-PSRR
LP38798 800-mA Ultra-Low-Noise, High-PSRR

... Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absol ...
MAX14840E/MAX14841E 40Mbps, +3.3V, RS
MAX14840E/MAX14841E 40Mbps, +3.3V, RS

... Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial. Note 2: Operation is specified with junction temper ...
Institutionen för systemteknik
Institutionen för systemteknik

... measure approximately 18 meters. This results in long wires between the alternator placed at the engine and the batteries placed in the front of the bus. Together with large power consuming units in the bus, such as air condition units and fans this will result in voltage drops in the charging circu ...
BQ24401 数据资料 dataSheet 下载
BQ24401 数据资料 dataSheet 下载

... batteries. During fast charge, it samples the TS pin voltage every 8 seconds and compares it to the value measured 2 samples earlier. This feature terminates fast charge if this voltage declines at a rate of VCC/161 (V/min). Figure 4 shows a typical connection diagram. In preparation for sampling th ...
PAM8302A datasheet
PAM8302A datasheet

... The PAM8302A is a 2.5W Class-D mono audio amplifier. Its low THD+N feature offers high quality sound reproduction. The new filterless architecture allows the device to drive speakers directly instead of using low-pass output filters, therefore saving system cost and PCB area. With the same number of ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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