MAX3223E 数据资料 dataSheet 下载
... Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to a ...
... Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to a ...
NX3P191 1. General description Logic controlled high-side power switch
... NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary tes ...
... NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary tes ...
BU3087FV
... For EMI protection, it is effective to put ferrite beads in the origin of power supply to be fed to BU3087FV from the printed circuit board or to insert a capacitor (of 1Ω or less), which bypasses high frequency desired, between the power supply and the GND terminal. For ICs with more than one power ...
... For EMI protection, it is effective to put ferrite beads in the origin of power supply to be fed to BU3087FV from the printed circuit board or to insert a capacitor (of 1Ω or less), which bypasses high frequency desired, between the power supply and the GND terminal. For ICs with more than one power ...
MIL-COTS Filter
... Information furnished by Vicor is believed to be accurate and reliable. However, no responsibility is assumed by Vicor for its use. Vicor makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication. Vicor reserves the right to make changes ...
... Information furnished by Vicor is believed to be accurate and reliable. However, no responsibility is assumed by Vicor for its use. Vicor makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication. Vicor reserves the right to make changes ...
Bipolar High-voltage Differential Interface for
... have a positive polarity that is referenced to 0V, which is often ground. This input limitation is dictated by the single, positive supply commonly used. High voltage levels can be applied and compared providing the voltage is reduced by some means to a safe input level. Input voltage levels below 0 ...
... have a positive polarity that is referenced to 0V, which is often ground. This input limitation is dictated by the single, positive supply commonly used. High voltage levels can be applied and compared providing the voltage is reduced by some means to a safe input level. Input voltage levels below 0 ...
FSA850 Audio 3-Pole / 4-Pole MIC-GND Switch FSA8
... Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package s ...
... Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package s ...
basic electrical engineering (ee-113)
... There is no zero adjustment on a DMM, but make sure that R=0 ohm when the leads are touching or an adjustment internal to the meter may have to be made. Any resistance above the maximum for a chosen scale will result in an O.L. ...
... There is no zero adjustment on a DMM, but make sure that R=0 ohm when the leads are touching or an adjustment internal to the meter may have to be made. Any resistance above the maximum for a chosen scale will result in an O.L. ...
VLSI Design of Low Power ALU Using Optimized Barrel Shifter
... clocked at the highest speed and is kept busy most of the time resulting in thermal hotspots and sharp temperature gradients within the execution core. Therefore, this strongly motivates energy-efficient ALU designs that satisfy the high-performance requirements, while reducing peak and average powe ...
... clocked at the highest speed and is kept busy most of the time resulting in thermal hotspots and sharp temperature gradients within the execution core. Therefore, this strongly motivates energy-efficient ALU designs that satisfy the high-performance requirements, while reducing peak and average powe ...
DAC161P997 Single-Wire 16-bit DAC for 4
... current temperature coefficient (29 ppm/°C) and excellent long-term output current drift (90 ppmFS) ...
... current temperature coefficient (29 ppm/°C) and excellent long-term output current drift (90 ppmFS) ...
Direct-Current Circuits
... They also might recognize that the current through the bulbs beforehand is the same, which suggests to them that they are in series, overgeneralizing a critical feature of the series arrangement. In other words, instructors often emphasize that the current through elements in series is the same. Stu ...
... They also might recognize that the current through the bulbs beforehand is the same, which suggests to them that they are in series, overgeneralizing a critical feature of the series arrangement. In other words, instructors often emphasize that the current through elements in series is the same. Stu ...
LTC5590 - Dual 600MHz to 1.7GHz High Dynamic Range Downconverting Mixer.
... the 600MHz to 4.5GHz RF frequency range. The LTC5590 is optimized for 600MHz to 1.7GHz RF applications. The LO frequency must fall within the 700MHz to 1.5GHz range for optimum performance. A typical application is a LTE or GSM receiver with a 700MHz to 915MHz RF input and high side LO. The LTC5590’ ...
... the 600MHz to 4.5GHz RF frequency range. The LTC5590 is optimized for 600MHz to 1.7GHz RF applications. The LO frequency must fall within the 700MHz to 1.5GHz range for optimum performance. A typical application is a LTE or GSM receiver with a 700MHz to 915MHz RF input and high side LO. The LTC5590’ ...
A Time-Based Energy-Efficient Analog-to-Digital Converter
... signal variable for the gain and subtraction routines. In addition, the converter naturally alleviates potential errors due to charge injection, comparator delays and offsets through a unique algorithm that utilizes a single comparator and reference current. It allows one to build an amplifying ADC ...
... signal variable for the gain and subtraction routines. In addition, the converter naturally alleviates potential errors due to charge injection, comparator delays and offsets through a unique algorithm that utilizes a single comparator and reference current. It allows one to build an amplifying ADC ...
Design of Single-Switch Inverters for Variable Resistance / Load
... circulating currents, operation can be made insensitive to the load resistance, but the achievable practical efficiency of such designs is relatively poor.) Moreover, previous methods do not provide a means to effectively realize load modulation in single-switch inverter designs with higher-order tu ...
... circulating currents, operation can be made insensitive to the load resistance, but the achievable practical efficiency of such designs is relatively poor.) Moreover, previous methods do not provide a means to effectively realize load modulation in single-switch inverter designs with higher-order tu ...
Design of Single-Switch Inverters for Variable Resistance
... circulating currents, operation can be made insensitive to the load resistance, but the achievable practical efficiency of such designs is relatively poor.) Moreover, previous methods do not provide a means to effectively realize load modulation in single-switch inverter designs with higher-order tu ...
... circulating currents, operation can be made insensitive to the load resistance, but the achievable practical efficiency of such designs is relatively poor.) Moreover, previous methods do not provide a means to effectively realize load modulation in single-switch inverter designs with higher-order tu ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.