SiP32419/29 Datasheet
... pin is pulled low. For the SiP32429, the fault flag will release 150 ms after the fault condition is cleared, and the switch will automatically turn on at the programmed slew rate. For the SiP32419, the switch will remain off and the fault flag will remain on. The switch will be reset by toggling ei ...
... pin is pulled low. For the SiP32429, the fault flag will release 150 ms after the fault condition is cleared, and the switch will automatically turn on at the programmed slew rate. For the SiP32419, the switch will remain off and the fault flag will remain on. The switch will be reset by toggling ei ...
CLA_Series 数据资料DataSheet下载
... At the end of the pulse the process reverses and the diodes “recover” to their high impedance states; the free charge that was injected into their I regions by the high-incident power signal leaks off through the ground return and is also reduced by internal recombination. With a ground return, reco ...
... At the end of the pulse the process reverses and the diodes “recover” to their high impedance states; the free charge that was injected into their I regions by the high-incident power signal leaks off through the ground return and is also reduced by internal recombination. With a ground return, reco ...
4-Thick film hybrid IC
... Thick film paste manufacturers normally specify stainless steel mesh because it has the best dimensional stability and a greater percentage open area than polyester, allowing an easier passage of the paste through the screen. Polyester, however, is more resilient, less prone to damage and more easil ...
... Thick film paste manufacturers normally specify stainless steel mesh because it has the best dimensional stability and a greater percentage open area than polyester, allowing an easier passage of the paste through the screen. Polyester, however, is more resilient, less prone to damage and more easil ...
AD9762 数据手册DataSheet 下载
... The AD9762’s flexible single-supply operating range of 2.7 V to 5.5 V and low power dissipation are well suited for portable and low power applications. Its power dissipation can be further reduced to a mere 45 mW without a significant degradation in performance by lowering the full-scale current ou ...
... The AD9762’s flexible single-supply operating range of 2.7 V to 5.5 V and low power dissipation are well suited for portable and low power applications. Its power dissipation can be further reduced to a mere 45 mW without a significant degradation in performance by lowering the full-scale current ou ...
Energy Storage Equipped STATCOM for Power Quality
... itself. One reason behind the later, is the increased interest in power quality, a term which targets the quality of the voltages and currents, focused on distortions from ideal power supplies. With respect to power quality, power electronic based loads are, on one hand, more demanding than conventi ...
... itself. One reason behind the later, is the increased interest in power quality, a term which targets the quality of the voltages and currents, focused on distortions from ideal power supplies. With respect to power quality, power electronic based loads are, on one hand, more demanding than conventi ...
MAX5391L/MAX5391N Evaluation Systems Evaluate: General Description Features
... have an end-to-end resistance of 10kI (MAX5391L) and 100kI (MAX5391N). Each wiper can be programmed independently among 256 tap positions. Each EV kit uses a MAX5391L or MAX5391N IC in a 16-pin thin QFN package on a proven two-layer PCB design. The EV kits provide connector J1 to interface with the ...
... have an end-to-end resistance of 10kI (MAX5391L) and 100kI (MAX5391N). Each wiper can be programmed independently among 256 tap positions. Each EV kit uses a MAX5391L or MAX5391N IC in a 16-pin thin QFN package on a proven two-layer PCB design. The EV kits provide connector J1 to interface with the ...
3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563
... If for any reason the R b resistor is not located immediately adjacent to the MGA-85563 (such as in the case of remote current adjustment or to implement dynamic control of the device’s linearity), then a small series resistor (e.g., 10 Ω) should be located near the Rbias pin to de-Q the connection ...
... If for any reason the R b resistor is not located immediately adjacent to the MGA-85563 (such as in the case of remote current adjustment or to implement dynamic control of the device’s linearity), then a small series resistor (e.g., 10 Ω) should be located near the Rbias pin to de-Q the connection ...
PDF
... signal) causing the relay to change state. The latter problem has effectively been solved by the use of suitably encoded switching signals in present generation of ripple relay. 3- Effect of harmonics on rotating machines:When considering the harmonic heating losses in the rotor of synchronous machi ...
... signal) causing the relay to change state. The latter problem has effectively been solved by the use of suitably encoded switching signals in present generation of ripple relay. 3- Effect of harmonics on rotating machines:When considering the harmonic heating losses in the rotor of synchronous machi ...
AD8195 数据手册DataSheet 下载
... exceeding this limit may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175°C for an extended period can result in device failure. To ensure proper operation, it is necessary to observe the maximum power ...
... exceeding this limit may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175°C for an extended period can result in device failure. To ensure proper operation, it is necessary to observe the maximum power ...
Integrated Circuit True RMS-to-DC Converter AD536A
... voltage, to optimize positive and negative waveform symmetry (dc reversal error), and to provide full-scale accuracy at 7 V rms. As a result, no external trims are required to achieve the rated unit accuracy. The input and output pins are fully protected. The input circuitry can take overload voltag ...
... voltage, to optimize positive and negative waveform symmetry (dc reversal error), and to provide full-scale accuracy at 7 V rms. As a result, no external trims are required to achieve the rated unit accuracy. The input and output pins are fully protected. The input circuitry can take overload voltag ...
P84233
... Conduit entrances to the backbox should be selected to provide sufficient wiring clearance for the installed product. Do not pass additional wires (used for other than the signaling appliance) through the backbox. Such additional wires could result in insufficient wiring space for the signaling appl ...
... Conduit entrances to the backbox should be selected to provide sufficient wiring clearance for the installed product. Do not pass additional wires (used for other than the signaling appliance) through the backbox. Such additional wires could result in insufficient wiring space for the signaling appl ...
Analysis and Design of a Zero-Voltage-Switching and Zero
... soft-switching circuit for the interleaved boost converter is proposed. However, its main switches are zero-current turn-ON and zero-voltage turn-OFF and the converter works in the discontinuous mode. The maximum duty cycle of the converter is also limited. In [10], it does not reduce the switching ...
... soft-switching circuit for the interleaved boost converter is proposed. However, its main switches are zero-current turn-ON and zero-voltage turn-OFF and the converter works in the discontinuous mode. The maximum duty cycle of the converter is also limited. In [10], it does not reduce the switching ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.