IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE)
... Block diagram of a PWM converter with voltage-source DC link: Generation of a variable voltage by pulse width modulation: Voltage and frequency must be specified in a suitable way for a certain operating state of the motor, characterized by speed and torque. Ideally, this corresponds to control of t ...
... Block diagram of a PWM converter with voltage-source DC link: Generation of a variable voltage by pulse width modulation: Voltage and frequency must be specified in a suitable way for a certain operating state of the motor, characterized by speed and torque. Ideally, this corresponds to control of t ...
AN2371
... applications and, generally, to replace the high current linear solution when the power dissipation may cause overheating of the application environment. It provides up to 1.5 A over an input voltage range of 2.5 V to 5.5 V. A high switching frequency (1.5 MHz) enables the use of tiny surface-mount ...
... applications and, generally, to replace the high current linear solution when the power dissipation may cause overheating of the application environment. It provides up to 1.5 A over an input voltage range of 2.5 V to 5.5 V. A high switching frequency (1.5 MHz) enables the use of tiny surface-mount ...
AN-6073 FAN6751 — Highly Integrated Green-Mode PWM Controller Introduction
... Should a Y-cap between primary and secondary be required, the Y-cap should be connected to the positive terminal of the Cbulk (VDC). If this Y-cap is connected to the primary GND, it should be connected to the negative terminal of the Cbulk (GND1) directly. Point discharge of the Y-cap also helps ...
... Should a Y-cap between primary and secondary be required, the Y-cap should be connected to the positive terminal of the Cbulk (VDC). If this Y-cap is connected to the primary GND, it should be connected to the negative terminal of the Cbulk (GND1) directly. Point discharge of the Y-cap also helps ...
AT7383
... ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may remain possibility to affect ...
... ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may remain possibility to affect ...
The Potentiostat and the Voltage Clamp
... control the voltage (or electrode potential) in, respectively, an electrolytic cell or a biological specimen. In their simplest forms, they are essentially the same circuit. In the early 1940s, Archie Hickling at the University of Leicester, England, who was working in the field of electrochemistry, ...
... control the voltage (or electrode potential) in, respectively, an electrolytic cell or a biological specimen. In their simplest forms, they are essentially the same circuit. In the early 1940s, Archie Hickling at the University of Leicester, England, who was working in the field of electrochemistry, ...
Floating-Gate Systems
... Programming a FG Bring chip up to program voltage Bring drain up to match Vds(run) Set Gate volt to read current Read Current through device Calculate next pulse on drain Pulse Drain voltage Rinse and repeat ...
... Programming a FG Bring chip up to program voltage Bring drain up to match Vds(run) Set Gate volt to read current Read Current through device Calculate next pulse on drain Pulse Drain voltage Rinse and repeat ...
transistor theory
... Remember that electrons scatter due to thermal effects. The average distance an electron travels before it combines with a hole is the recombination distance. The recombination distance is on the order of tens of nanometers. ...
... Remember that electrons scatter due to thermal effects. The average distance an electron travels before it combines with a hole is the recombination distance. The recombination distance is on the order of tens of nanometers. ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.