LOYOLA COLLEGE (AUTONOMOUS), CHENNAI – 600 034 B.Sc. DEGREE EXAMINATION PHYSICS
... 16. Explain the functioning of i) logarithmic amplifier and ii) Integrator. 17. With a neat circuit diagram, explain the working of an op-amp based binary weighted D/A Converter. 18. Explain with a neat diagram how i) a resistor ii) a transistor and iii) a diode is fabricated in an integrating circu ...
... 16. Explain the functioning of i) logarithmic amplifier and ii) Integrator. 17. With a neat circuit diagram, explain the working of an op-amp based binary weighted D/A Converter. 18. Explain with a neat diagram how i) a resistor ii) a transistor and iii) a diode is fabricated in an integrating circu ...
Feb 2000 10µA Quiescent Current Step
... loads, the regulator spends most of the time in this low quiescent current sleep mode, minimizing supply current and maximizing efficiency. Burst Mode operation can be disabled by pulling the Mode pin to ground. Disabling Burst Mode operation allows the loads to decrease another decade, to about 1%– ...
... loads, the regulator spends most of the time in this low quiescent current sleep mode, minimizing supply current and maximizing efficiency. Burst Mode operation can be disabled by pulling the Mode pin to ground. Disabling Burst Mode operation allows the loads to decrease another decade, to about 1%– ...
Current and Potential
... same manner, in the absence of a retarding force, a charge subject to the influence of an external electric field should continue in the same state-of-motion. But if a power source is turned off, it does not continue at the same rate. The electrical equivalent of friction occurs when the electrons ( ...
... same manner, in the absence of a retarding force, a charge subject to the influence of an external electric field should continue in the same state-of-motion. But if a power source is turned off, it does not continue at the same rate. The electrical equivalent of friction occurs when the electrons ( ...
STEVAL-ISA012V1
... auxiliary SMPS for high voltage street lighting, where the input voltage can range from 90 VAC to 450 VAC and 1000 V Power MOSFETs are currently used. ...
... auxiliary SMPS for high voltage street lighting, where the input voltage can range from 90 VAC to 450 VAC and 1000 V Power MOSFETs are currently used. ...
Nov-2nd-circuit
... through it. Sketch the circuit diagram and calculate how many volts supply the CD player? ...
... through it. Sketch the circuit diagram and calculate how many volts supply the CD player? ...
simeas-p - Siemens
... Store and handle in strict compliance with manufacturer’s instructions and recommendations. Protect from potential damage from weather and construction operations. If the meters are installed in equipment, store the equipment so condensation will not form on or in it. If necessary, apply temporary h ...
... Store and handle in strict compliance with manufacturer’s instructions and recommendations. Protect from potential damage from weather and construction operations. If the meters are installed in equipment, store the equipment so condensation will not form on or in it. If necessary, apply temporary h ...
SMG5 - Fieldpiece Instruments
... The low battery indicator " " is displayed when measuring very low values of resistance (below 500KΩ). This is due to the large amount of current power consumed when measuring such small resistances. Replace the batteries if subsequent resistance measurements of high values result in the display " " ...
... The low battery indicator " " is displayed when measuring very low values of resistance (below 500KΩ). This is due to the large amount of current power consumed when measuring such small resistances. Replace the batteries if subsequent resistance measurements of high values result in the display " " ...
Current And Resistance
... (b), (d). The length of the line cord will double in this event. This would tend to increase the resistance of the line cord. But the doubling of the radius of the line cord results in the increase of the cross-sectional area by a factor of 4. This would reduce the resistance more than the doubling ...
... (b), (d). The length of the line cord will double in this event. This would tend to increase the resistance of the line cord. But the doubling of the radius of the line cord results in the increase of the cross-sectional area by a factor of 4. This would reduce the resistance more than the doubling ...
KSA1010 KSA101 0 PNP Epitaxial Silicon Transistor
... 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when pr ...
... 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when pr ...
1200-Volt IC Changes the Way 3-Phase Motor Drive
... devices are available in this mixed technology process using n-epitaxial layer on p-substrate structure as shown in Figure 2. High voltage lateral DMOS (LDMOS), both n-channel and p-channel types, have high breakdown voltages and low input capacitances. They are ideal devices for level shifting circ ...
... devices are available in this mixed technology process using n-epitaxial layer on p-substrate structure as shown in Figure 2. High voltage lateral DMOS (LDMOS), both n-channel and p-channel types, have high breakdown voltages and low input capacitances. They are ideal devices for level shifting circ ...
Resistance does not vary with the applied voltage
... can be made to flow out from the inner surface to the outer. What would the resistance be for this current? ...
... can be made to flow out from the inner surface to the outer. What would the resistance be for this current? ...
Control of Self Excited Induction Generator using ANN based SVC
... Artificial Neural Networks are considered as a relatively new information processing technique. They can be defined as “a computing system made up of a number of simple, highly interconnected processing elements, which process information by its dynamic state response”. A neural network consists of ...
... Artificial Neural Networks are considered as a relatively new information processing technique. They can be defined as “a computing system made up of a number of simple, highly interconnected processing elements, which process information by its dynamic state response”. A neural network consists of ...
EUP2538 10X2 Strings WLED Boost Converter DESCRIPTION
... The current rating of the Schottky diode must exceed the peak current flowing through it. The Schottky diode performance is rated in terms of its forward voltage at a given current. In order to achieve the best efficiency, this forward voltage should be as low as possible. The response time is also ...
... The current rating of the Schottky diode must exceed the peak current flowing through it. The Schottky diode performance is rated in terms of its forward voltage at a given current. In order to achieve the best efficiency, this forward voltage should be as low as possible. The response time is also ...
ELECTROCHEMICAL CAPACITORS
... A different kind of capacitance can arise at electrodes of certain kinds, for example ruthenium dioxide, when the extent of faradaically admitted charge depends linearly, or approximately linearly, on the applied voltage. For such a situation, the electrode behavior is equivalent to, and measurable ...
... A different kind of capacitance can arise at electrodes of certain kinds, for example ruthenium dioxide, when the extent of faradaically admitted charge depends linearly, or approximately linearly, on the applied voltage. For such a situation, the electrode behavior is equivalent to, and measurable ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.