2SC4134 数据资料DataSheet下载
... Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpos ...
... Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpos ...
TDE3247
... specifically to drive lamps, relays and stepping motors. The Device is essentialy blow-out proof. Current limiting is available to limit the peak output current to a safe value, the adjustment only required an external resistor. In addition, thermal shut-down is provided to keep the IC from overheat ...
... specifically to drive lamps, relays and stepping motors. The Device is essentialy blow-out proof. Current limiting is available to limit the peak output current to a safe value, the adjustment only required an external resistor. In addition, thermal shut-down is provided to keep the IC from overheat ...
Diodes
... power supply. In fact, neither supply is very good. Both are unregulated. Regulated power supplies will be studied in a later lab. The PIN Diode The PIN diode has intrinsic (i.e. not doped) material (I) in the junction between P and N type material. It makes a fast photo diode, wherein minority carr ...
... power supply. In fact, neither supply is very good. Both are unregulated. Regulated power supplies will be studied in a later lab. The PIN Diode The PIN diode has intrinsic (i.e. not doped) material (I) in the junction between P and N type material. It makes a fast photo diode, wherein minority carr ...
Ohm`s Law Calculations
... For many devices, the resistance is constant regardless of the current. In this case, the potential difference is directly proportional to the current:V = I · R This is known as Ohm's law. Any device that follows Ohm's law is called an "ohmic" device; A device that does not obey Ohm's law is said to ...
... For many devices, the resistance is constant regardless of the current. In this case, the potential difference is directly proportional to the current:V = I · R This is known as Ohm's law. Any device that follows Ohm's law is called an "ohmic" device; A device that does not obey Ohm's law is said to ...
Transformers
... 12 volts for a cell phone charger. If there are 40 turns in the primary coil, how many turns must be in the secondary coil? ...
... 12 volts for a cell phone charger. If there are 40 turns in the primary coil, how many turns must be in the secondary coil? ...
Students: Serge Yakushevsky, Dima Vilensky
... to increase PV string efficiency, making our project very relevant and at the forefront of this research area. In this project we will investigate a PV panel field subject to inhomogeneous insolation caused by shading changes. The project’s main goals are to find new power- effective and cheap solut ...
... to increase PV string efficiency, making our project very relevant and at the forefront of this research area. In this project we will investigate a PV panel field subject to inhomogeneous insolation caused by shading changes. The project’s main goals are to find new power- effective and cheap solut ...
Application Note AN-9052 Design Guide for Selection of Bootstrap Components www.fairchildsemi.com
... account for the case when Vx is pulled down to ground, which Vbs is at its lowest level, and cause under voltage lockout (UVLO) malfunction. Most gate drive ICs have undervoltage detection circuit that prevents from driving an external switch when Vbs drops below a certain level (specified in datash ...
... account for the case when Vx is pulled down to ground, which Vbs is at its lowest level, and cause under voltage lockout (UVLO) malfunction. Most gate drive ICs have undervoltage detection circuit that prevents from driving an external switch when Vbs drops below a certain level (specified in datash ...
FSTU32160 16-Bit to 32-Bit Multiplexer/Demultiplexer Bus Switch with 2V Undershoot Protection
... ■ Slower Output Enable times prevent signal disruption ...
... ■ Slower Output Enable times prevent signal disruption ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.