Download KSA1010 KSA101 0 PNP Epitaxial Silicon Transistor

KSA1010
KSA1010
High Speed High Voltage Switching
• Industrial Use
• Complement to KSC2334
TO-220
1
1.Base
2.Collector
3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
- 100
Units
V
VCEO
Collector-Emitter Voltage
- 100
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current (DC)
-7
A
ICP
*Collector Current (Pulse)
- 15
A
IB
Base Current
- 3.5
A
PC
Collector Dissipation (TC=25°C)
40
W
Collector Dissipation (Ta=25°C)
1.5
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
* PW≤300µs, Duty Cycle≤10%
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©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
Test Condition
IC = - 5A, IB1 = - 0.5A, L = 1mH
Min.
- 100
VCEX(sus)1
Collector-Emitter Sustaining Voltage
IC = - 5A, IB1 = - IB2 = - 0.5A
VBE(off) = 5V, L = 180µH
Clamped
- 100
V
VCEX(sus)2
Collector-Emitter Sustaining Voltage
IC = - 10A, IB1 = - 1A
IB2 = 0.5A, VBE(off) = 5V
L = 180µH, Clamped
- 100
V
ICBO
Collector Cut-off Current
VCB = - 100V, IE = 0
ICER
Collector Cut-off Current
VCE = - 100V, RBE = 51Ω
TC = 125°C
Max.
Units
V
- 10
µA
-1
mA
ICEX1
Collector Cut-off Current
VCE = - 100V, VBE(off) = 1.5V
- 10
µA
ICEX2
Collector Cut-off Current
VCE = - 100V, VBE(off) = 1.5V
TC = 125°C
-1
mA
IEBO
Emitter Cut-off Current
VEB = - 5V, IC= 0
- 10
uA
hFE1
hFE2
hFE3
* DC Current Gain
VCE = - 5V, IC = - 0.5A
VCE = - 5V, IC = - 3A
VCE = - 5V, IC = - 5A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = - 5A, IB = - 0.5A
- 0.6
VBE(sat)
* Base-Emitter Saturation Voltage
IC = - 5A, IB = - 0.5A
- 1.5
V
tON
Turn On Time
0.5
µs
tSTG
Storage Time
1.5
µs
tF
Fall Time
VCC = - 50V, IC = - 5A,
IB1 = - IB2 = - 0.5A
RL = 10Ω
0.5
µs
40
40
20
KSA1010
Electrical Characteristics TC=25°C unless otherwise noted
200
V
Pulse Test: PW≤350µs, Duty Cycle≤2%
hFE Classification
Classification
R
O
Y
hFE2
40 ~ 80
60 ~ 120
100 ~ 200
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©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001
KSA1010
Typical Characteristics
-5
IB = -100mA
IB
=
0m
-8
A
1000
IB = -7
IB = -60mA
0m A
IB = -50mA
-4
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
IB = -90mA
IB = -40mA
-3
IB = -30mA
IB = -20mA
-2
IB = -10mA
-1
-0
-0
-1
-2
-3
-4
VCE = -5.0V
100
10
1
-0.01
-5
-0.1
V CE[V], COLLECTOR-EMITTER VOLTAGE
-10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10
-100
s
0m
10
-0.01
-0.01
Lim
ite
d
-1
s
m
10
VCE(sat)
Dis
sp
ati
on
s
1m
-0.1
-10
s
0u
30
-1
IC Max. (Pulsed)
us
s
50
0u
10
VBE(sat)
d
ite
m
Li
IC[A], COLLECTOR CURRENT
IC = 10 IB
b
S/
VCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE
-1
-0.1
-0.01
-0.1
-1
-10
-1
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Safe Operating Area
160
50
PC[W], POWER DISSIPATION
140
dT(%), IC DERATING
120
100
80
DI
60
SS
IP
AT
I
40
S/b
ON
LI
M
LIM
IT
E
20
ITE
D
D
0
0
25
50
75
100
125
150
175
200
o
TC[ C], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Areas
40
30
20
10
0
0
25
50
75
100
125
150
175
200
o
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
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©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001
KSA1010
Package Demensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
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©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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©2001 Fairchild Semiconductor Corporation
Rev. H3