CIRCUIT FUNCTION AND BENEFITS
... devices require an AGND-to-DGND connection, the connection is to be made at one point only. The star ground point is established as close as possible to the device. The AD5764 must have ample supply bypassing of 10 µF in parallel with 0.1 µF on each supply, located as close to the package as possibl ...
... devices require an AGND-to-DGND connection, the connection is to be made at one point only. The star ground point is established as close as possible to the device. The AD5764 must have ample supply bypassing of 10 µF in parallel with 0.1 µF on each supply, located as close to the package as possibl ...
OpAmp Output Protection (posted 16 June, 2016)
... Operational Amplifiers are often used as output drivers and can be subject to output overload, especially when driving loads outside the box. This overload may damage the output driver of the op-amp. An often used circuit includes an output resistor placed between the op amp and the feedback loop as ...
... Operational Amplifiers are often used as output drivers and can be subject to output overload, especially when driving loads outside the box. This overload may damage the output driver of the op-amp. An often used circuit includes an output resistor placed between the op amp and the feedback loop as ...
Automatic voltage regulator AVR6-V2, AVR6-V3
... the chosen threshold the regulator operates according to U/f = const. curve. The regulator has two preset thresholds: one at 48 Hz and the second at 58 Hz. The changing from one threshold to the other is made by connecting a strap to the FASTON terminals. The extension of the line U/f = const. cuts ...
... the chosen threshold the regulator operates according to U/f = const. curve. The regulator has two preset thresholds: one at 48 Hz and the second at 58 Hz. The changing from one threshold to the other is made by connecting a strap to the FASTON terminals. The extension of the line U/f = const. cuts ...
PNP Bipolar Transistor for High-Current Switching Applications
... ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction wi ...
... ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction wi ...
FXWA9306 Dual Bi-Directional I C-Bus® and SMBus Voltage- Level Translator
... line length of concern is on the 1.8V side because it is driven through the on resistance of the FXWA9306. If the line length on the 1.8V side is long enough, there can be a reflection at the chip / terminating end of the wire when the transition time is shorter than the time of flight of the wire. ...
... line length of concern is on the 1.8V side because it is driven through the on resistance of the FXWA9306. If the line length on the 1.8V side is long enough, there can be a reflection at the chip / terminating end of the wire when the transition time is shorter than the time of flight of the wire. ...
6.3.4 The Design of Harmonic Filter and Reactive Power
... compensation, and Passive Power Filter (PPF) with Active Power Filter (APF) together in 10KV intermediate line. The design features are as the followings: (1) A proper amount of PPF will be installed first and kept without switching during the whole time of Tokamak pulse operation. (2) Multi-group s ...
... compensation, and Passive Power Filter (PPF) with Active Power Filter (APF) together in 10KV intermediate line. The design features are as the followings: (1) A proper amount of PPF will be installed first and kept without switching during the whole time of Tokamak pulse operation. (2) Multi-group s ...
Bit-Line Biasing Technique for Phase-Change Memories
... to the case of PCMs, although all concepts are also valid for other non-volatile storage devices such as Flash memories. Figure 1 shows a schematic diagram of a conventional bitline biasing technique applied to a PCM device. In particular, a detail of a bit-line including two memory elements togethe ...
... to the case of PCMs, although all concepts are also valid for other non-volatile storage devices such as Flash memories. Figure 1 shows a schematic diagram of a conventional bitline biasing technique applied to a PCM device. In particular, a detail of a bit-line including two memory elements togethe ...
AN-6961 Critical Conduction Mode PFC Controller Description
... lower than the threshold voltage (1.75V typical), the PWM output is high again and initiates a new switching cycle. However, there is a prerequisite: the zero-current detector voltage must exceed the rising-edge threshold voltage (2.1V typical) before it falls below 1.75V. The minimum risingedge vol ...
... lower than the threshold voltage (1.75V typical), the PWM output is high again and initiates a new switching cycle. However, there is a prerequisite: the zero-current detector voltage must exceed the rising-edge threshold voltage (2.1V typical) before it falls below 1.75V. The minimum risingedge vol ...
here
... The laboratory this time involves more design than any of the previous labs, and introduces some new concepts and devices. Accordingly, you will be given more than one week to complete the project. There is a lot of work to do, so don’t put it off. Expect to spend some time outside of the normal lab ...
... The laboratory this time involves more design than any of the previous labs, and introduces some new concepts and devices. Accordingly, you will be given more than one week to complete the project. There is a lot of work to do, so don’t put it off. Expect to spend some time outside of the normal lab ...
EPC9047 Quick Start Guide - Efficient Power Conversion
... the EPC2033 eGaN® field effect transistors (FETs). The purpose of these development boards is to simplify the evaluation process of these eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter. The development board is 2” x 1.5” ...
... the EPC2033 eGaN® field effect transistors (FETs). The purpose of these development boards is to simplify the evaluation process of these eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter. The development board is 2” x 1.5” ...
IEEE Conference Paper Template
... successful in suppressing inrush current which is usually found in a start-up transition. Since the current level varies with load condition, it is hard to tune the switching timing diagram to match these two currents. Thus, a passive or an active clamp circuit is still needed V. ...
... successful in suppressing inrush current which is usually found in a start-up transition. Since the current level varies with load condition, it is hard to tune the switching timing diagram to match these two currents. Thus, a passive or an active clamp circuit is still needed V. ...
Supercapacitor
... What makes’ supercapacitors different from other capacitors types are the electrodes used in these capacitors. Supercapacitors are based on a carbon (nanotube) technology. The carbon technology used in these capacitors creates a very large surface area with an extremely small separation distance. Ca ...
... What makes’ supercapacitors different from other capacitors types are the electrodes used in these capacitors. Supercapacitors are based on a carbon (nanotube) technology. The carbon technology used in these capacitors creates a very large surface area with an extremely small separation distance. Ca ...
Application Tip - Beckwith Electric Co., Inc.
... adjusts the bandcenter of the control to compensate the local voltage by the calculated voltage drop. (If the bandcenter setting is 120 V and LDC voltage drop calculation is 3 V, the new bandcenter will be 123 V. This causes the desired voltage level to appear at the load center.) (The setpoint may ...
... adjusts the bandcenter of the control to compensate the local voltage by the calculated voltage drop. (If the bandcenter setting is 120 V and LDC voltage drop calculation is 3 V, the new bandcenter will be 123 V. This causes the desired voltage level to appear at the load center.) (The setpoint may ...
CD54HC377/3A CD54HCT377/3A Octal D-Type Flip-Flop with Data Enable Functional Diagram
... TA = -55oC to +100oC (Package F) . . . . . . . . . . . . . . . . . . 500mW TA = +100oC to +125oC (Package F) . . . . . . . . Derate Linearly at 8mW/ oC to 300mW Operating Temperature Range, TA Package Type F . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +125oC Storage Temperature, TST ...
... TA = -55oC to +100oC (Package F) . . . . . . . . . . . . . . . . . . 500mW TA = +100oC to +125oC (Package F) . . . . . . . . Derate Linearly at 8mW/ oC to 300mW Operating Temperature Range, TA Package Type F . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +125oC Storage Temperature, TST ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.