Silicon-Organic Hybrid Electro-Optical Devices
... strip waveguide, a slot waveguide, a strip-loaded slot waveguide, and a double-slot waveguide; see Fig. 1. The properties of these waveguides are summarized in Table I. All waveguides depicted in Fig. 1 share the common feature of having a highrefractive index core (nSi =3.48) and a low-refractive i ...
... strip waveguide, a slot waveguide, a strip-loaded slot waveguide, and a double-slot waveguide; see Fig. 1. The properties of these waveguides are summarized in Table I. All waveguides depicted in Fig. 1 share the common feature of having a highrefractive index core (nSi =3.48) and a low-refractive i ...
etching of nitinol - Advanced Chemical Etching
... Shape memory is the effect of restoring the original shape of a deformed material by heating it. The shape-memory effect in NiTi was discovered in the early sixties at the US Naval Ordnance Laboratory (hence the name Nitinol). Nitinol can exist in two different solid structures: austenitic or marten ...
... Shape memory is the effect of restoring the original shape of a deformed material by heating it. The shape-memory effect in NiTi was discovered in the early sixties at the US Naval Ordnance Laboratory (hence the name Nitinol). Nitinol can exist in two different solid structures: austenitic or marten ...
Poster_2
... 5. Beam of relativistic electrons has a super-Alfven current value; it induces a backcurrent and self-focuses inside the pinch plasma; its action upon the anode surface produces SW in the pinch plasma and in the anode material and generates hard Xrays of a specific space pattern 6. Beam of fast ions ...
... 5. Beam of relativistic electrons has a super-Alfven current value; it induces a backcurrent and self-focuses inside the pinch plasma; its action upon the anode surface produces SW in the pinch plasma and in the anode material and generates hard Xrays of a specific space pattern 6. Beam of fast ions ...
Wirebondable Finishes Application Notes
... widely researched for use in lead free alloys. A new silver based coating has been developed that provides flat planar pads for surface mounting and has shown evidence that it provides excellent wire bondability for direct attachment. It is coupled with a very thin (10 angstroms) organic inhibitor t ...
... widely researched for use in lead free alloys. A new silver based coating has been developed that provides flat planar pads for surface mounting and has shown evidence that it provides excellent wire bondability for direct attachment. It is coupled with a very thin (10 angstroms) organic inhibitor t ...
UNCONVENTIONAL MACHINING PROCESS
... rely on electric motors and hard tool materials to perform tasks such as sawing, drilling and broaching. Conventional forming operations are performed with the energy from electric motors, hydraulics and gravity. Likewise, material joining is conventionally accomplished with thermal energy sources s ...
... rely on electric motors and hard tool materials to perform tasks such as sawing, drilling and broaching. Conventional forming operations are performed with the energy from electric motors, hydraulics and gravity. Likewise, material joining is conventionally accomplished with thermal energy sources s ...
Lecture 0: Introduction
... n-well n-well is formed with diffusion or ion implantation Diffusion – Place wafer in furnace with arsenic gas – Heat until As atoms diffuse into exposed Si Ion Implanatation – Blast wafer with beam of As ions – Ions blocked by SiO2, only enter exposed Si SiO2 n well ...
... n-well n-well is formed with diffusion or ion implantation Diffusion – Place wafer in furnace with arsenic gas – Heat until As atoms diffuse into exposed Si Ion Implanatation – Blast wafer with beam of As ions – Ions blocked by SiO2, only enter exposed Si SiO2 n well ...
Lecture 0: Introduction
... n-well n-well is formed with diffusion or ion implantation Diffusion – Place wafer in furnace with arsenic gas – Heat until As atoms diffuse into exposed Si Ion Implanatation – Blast wafer with beam of As ions – Ions blocked by SiO2, only enter exposed Si SiO2 n well ...
... n-well n-well is formed with diffusion or ion implantation Diffusion – Place wafer in furnace with arsenic gas – Heat until As atoms diffuse into exposed Si Ion Implanatation – Blast wafer with beam of As ions – Ions blocked by SiO2, only enter exposed Si SiO2 n well ...
2016 C.. - CS ManTech
... Rectifying behavior was observed, as shown in Figure 5 for the device with the optimized cap. This represents a first for a p-i-n structure formed by Mg ion implantation in GaN. The turn-on voltage is consistent with a p-n junction, and the ideality factor of 2.6 is consistent with a recombination/g ...
... Rectifying behavior was observed, as shown in Figure 5 for the device with the optimized cap. This represents a first for a p-i-n structure formed by Mg ion implantation in GaN. The turn-on voltage is consistent with a p-n junction, and the ideality factor of 2.6 is consistent with a recombination/g ...
CMOS VLSI Design 4th Ed. 1
... n-well n-well is formed with diffusion or ion implantation Diffusion – Place wafer in furnace with arsenic gas – Heat until As atoms diffuse into exposed Si Ion Implanatation – Blast wafer with beam of As ions – Ions blocked by SiO2, only enter exposed Si SiO2 n well ...
... n-well n-well is formed with diffusion or ion implantation Diffusion – Place wafer in furnace with arsenic gas – Heat until As atoms diffuse into exposed Si Ion Implanatation – Blast wafer with beam of As ions – Ions blocked by SiO2, only enter exposed Si SiO2 n well ...
Document
... • The cathode is advanced into the anode work piece at a rate matching the dissolution rate, which is between 0.5 and 10 mm/min when applying current densities of 10 to 100 A/cm2. The supply voltage commonly used in ECM ranges from 5 to 20 V, the lower values being used for finish machining ( creati ...
... • The cathode is advanced into the anode work piece at a rate matching the dissolution rate, which is between 0.5 and 10 mm/min when applying current densities of 10 to 100 A/cm2. The supply voltage commonly used in ECM ranges from 5 to 20 V, the lower values being used for finish machining ( creati ...
ECG and ECM - Marc Madou
... • The cathode is advanced into the anode work piece at a rate matching the dissolution rate, which is between 0.5 and 10 mm/min when applying current densities of 10 to 100 A/cm2. The supply voltage commonly used in ECM ranges from 5 to 20 V, the lower values being used for finish machining ( creati ...
... • The cathode is advanced into the anode work piece at a rate matching the dissolution rate, which is between 0.5 and 10 mm/min when applying current densities of 10 to 100 A/cm2. The supply voltage commonly used in ECM ranges from 5 to 20 V, the lower values being used for finish machining ( creati ...
System Level Power-Performance Co-simulation Using Transaction
... temperatures over a localized area on a silicon chip. Bulk micromachining techniques [4] can physically and thermally isolate the heating elements from the underlying silicon substrate, allowing surface temperatures as high as 450ºC to be reached. Such structures feature low power dissipation, low f ...
... temperatures over a localized area on a silicon chip. Bulk micromachining techniques [4] can physically and thermally isolate the heating elements from the underlying silicon substrate, allowing surface temperatures as high as 450ºC to be reached. Such structures feature low power dissipation, low f ...
Improving Surface Properties of Materials
... difficult. However, there are a number of applications that require internal surface coatings, such as aircraft landing gear, hydraulic cylinders, automotive engine cylinder liners, military gun barrels and pipes for transporting petroleum and chemical products. To deposit DLC on the inner diameter ...
... difficult. However, there are a number of applications that require internal surface coatings, such as aircraft landing gear, hydraulic cylinders, automotive engine cylinder liners, military gun barrels and pipes for transporting petroleum and chemical products. To deposit DLC on the inner diameter ...
Lecture 8
... • The cathode is advanced into the anode work piece at a rate matching the dissolution rate, which is between 0.5 and 10 mm/min when applying current densities of 10 to 100 A/cm2. The supply voltage commonly used in ECM ranges from 5 to 20 V, the lower values being used for finish machining ( creati ...
... • The cathode is advanced into the anode work piece at a rate matching the dissolution rate, which is between 0.5 and 10 mm/min when applying current densities of 10 to 100 A/cm2. The supply voltage commonly used in ECM ranges from 5 to 20 V, the lower values being used for finish machining ( creati ...
No Slide Title
... Resistance and Low Power Analog Applications FEE2006 Workshop on Front-End electronics ...
... Resistance and Low Power Analog Applications FEE2006 Workshop on Front-End electronics ...
(NH4)2S surface passivation
... techniques including surface or interfacial nitridation, [4] Spassivation, [5–7] Si-passivation, [8] and F-passivation, [9] have been applied to improve the stability of high-κ/Ge systems. However, these passivation methods are carried out in the HFlast process. Chemical passivation followed by HCl ...
... techniques including surface or interfacial nitridation, [4] Spassivation, [5–7] Si-passivation, [8] and F-passivation, [9] have been applied to improve the stability of high-κ/Ge systems. However, these passivation methods are carried out in the HFlast process. Chemical passivation followed by HCl ...
Principal strains, principal directions
... In case the deformations are small and the bady is elastic, then relations (E1) are linear. linear ...
... In case the deformations are small and the bady is elastic, then relations (E1) are linear. linear ...
Cadmium-Telluride-Solar-Cells
... It is etched by many acids including hydrocloric and hydrobromic acid, forming (toxic) hydrogen telluride gas. ...
... It is etched by many acids including hydrocloric and hydrobromic acid, forming (toxic) hydrogen telluride gas. ...
Chalcogenide glass microphotonics: Stepping into the spotlight
... Setting aside mechanical properties, ChGs exhibit a number of features that outclass rival materials when it comes to photonic integration on flexible substrates. First of all, unlike crystalline materials that typically require epitaxial growth to form thin films, amorphous ChGs can be coated direc ...
... Setting aside mechanical properties, ChGs exhibit a number of features that outclass rival materials when it comes to photonic integration on flexible substrates. First of all, unlike crystalline materials that typically require epitaxial growth to form thin films, amorphous ChGs can be coated direc ...
THE EFFECT OF CRYSTALLOGRAPHIC ORIENTATION ON
... respectively. The [111] direction is at an angle of 54.74° from the [100] direction. .....................................................................................................................................17 Figure 2.10: Variation of the elastic modulus around the (111) crystal face of ...
... respectively. The [111] direction is at an angle of 54.74° from the [100] direction. .....................................................................................................................................17 Figure 2.10: Variation of the elastic modulus around the (111) crystal face of ...
J. Phys. Chem. C - Photochemical Dynamics Group
... us to revisit this characteristically unstable semiconductor in order to improve its photoelectrochemical response in aqueous electrolytes, with the aim of employing this ultra low-cost material for solar fuel production. Several studies on Cu2O electrodeposition,27−31 which is an attractive, robust ...
... us to revisit this characteristically unstable semiconductor in order to improve its photoelectrochemical response in aqueous electrolytes, with the aim of employing this ultra low-cost material for solar fuel production. Several studies on Cu2O electrodeposition,27−31 which is an attractive, robust ...
Mid-Infrared Tunable Resonant Cavity Enhanced Detectors
... in the mid-infrared (mid-IR) spectral range [1]. The photodetector is placed inside a Fabry-Pérot cavity. Incoming radiation is reflected multiple times within the cavity and a standing wave pattern forms. The detector is highly sensitive almost exclusively at those resonances. The peak wavelengths ...
... in the mid-infrared (mid-IR) spectral range [1]. The photodetector is placed inside a Fabry-Pérot cavity. Incoming radiation is reflected multiple times within the cavity and a standing wave pattern forms. The detector is highly sensitive almost exclusively at those resonances. The peak wavelengths ...
plasma neutralization models for intense ion beam
... beam density, can be studied by the use of linear perturbation theory [1]. Here, we focus on the nonlinear case where the plasma density has an arbitrary value compared with the beam density, and correspondingly, the degrees of current and charge neutralization are arbitrary. The transport of stripp ...
... beam density, can be studied by the use of linear perturbation theory [1]. Here, we focus on the nonlinear case where the plasma density has an arbitrary value compared with the beam density, and correspondingly, the degrees of current and charge neutralization are arbitrary. The transport of stripp ...
microelectronics
... situations, such as the handling of radioactive materials. We can remotely pilot aircraft from takeoff to landing. We can make course corrections to spacecraft millions of miles from Earth. Space flight, computers, and even video games would not be possible except for the advances made in microelect ...
... situations, such as the handling of radioactive materials. We can remotely pilot aircraft from takeoff to landing. We can make course corrections to spacecraft millions of miles from Earth. Space flight, computers, and even video games would not be possible except for the advances made in microelect ...
Activities - Center for High Technology Materials
... E. T2SL Material Growth The detector material used in this study was grown on n-type (Te-doped) GaSb (100) epiready substrates using a solid source molecular beam epitaxy (MBE) system equipped with valved cracker sources for the group V Sb2 and As2 fluxes, and Ga/In SUMO® cells. MBE is a modern tech ...
... E. T2SL Material Growth The detector material used in this study was grown on n-type (Te-doped) GaSb (100) epiready substrates using a solid source molecular beam epitaxy (MBE) system equipped with valved cracker sources for the group V Sb2 and As2 fluxes, and Ga/In SUMO® cells. MBE is a modern tech ...
Microelectromechanical systems
Microelectromechanical systems (MEMS) (also written as micro-electro-mechanical, MicroElectroMechanical or microelectronic and microelectromechanical systems and the related micromechatronics) is the technology of very small devices; it merges at the nano-scale into nanoelectromechanical systems (NEMS) and nanotechnology. MEMS are also referred to as micromachines (in Japan), or micro systems technology – MST (in Europe).MEMS are separate and distinct from the hypothetical vision of molecular nanotechnology or molecular electronics. MEMS are made up of components between 1 to 100 micrometres in size (i.e. 0.001 to 0.1 mm), and MEMS devices generally range in size from 20 micrometres to a millimetre (i.e. 0.02 to 1.0 mm). They usually consist of a central unit that processes data (the microprocessor) and several components that interact with the surroundings such as microsensors. At these size scales, the standard constructs of classical physics are not always useful. Because of the large surface area to volume ratio of MEMS, surface effects such as electrostatics and wetting dominate over volume effects such as inertia or thermal mass.The potential of very small machines was appreciated before the technology existed that could make them (see, for example, Richard Feynman's famous 1959 lecture There's Plenty of Room at the Bottom). MEMS became practical once they could be fabricated using modified semiconductor device fabrication technologies, normally used to make electronics. These include molding and plating, wet etching (KOH, TMAH) and dry etching (RIE and DRIE), electro discharge machining (EDM), and other technologies capable of manufacturing small devices. An early example of a MEMS device is the resonistor – an electromechanical monolithic resonator.