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ECE 371 – Spring 2009 Room: ECE 310 M: 11 – 12:50 W&F: 11 – 11:50 Instructor: Ganesh Balakrishnan, [email protected], 505-272-7970, Room 116B CHTM. (Go to www.chtm.unm.edu for directions). Office hours: T and Th 10 to 12 AM or by appointment at CHTM. Textbook: Semiconductor Physics and Devices, 3rd Edition, D.A. Neamen, ISBN 0-07-232107-5 SYLLABUS Chapter 1 - Crystal Structure (3 hours): Space lattices, Bonding, Imperfections, Miller indices and crystal growth. Chapter 2 – Quantum mechanics (5 hours): Wave-particle duality, Schrödinger’s equation, Barriers/Tunneling, Infinite potential well, Finite potential well, Hydrogen atom and the periodic chart. Chapter 3 – Quantum theory of solids (5 hours): Kronig-penny model (1D), Bloch’s theorem, Brillouin zones, Effective mass, Holes, Real (3-D) band structure, Statistical mechanics (density of states and Fermi functions). Chapter 4 – Equilibrium carrier distribution (6 hours): Intrinsic material, Fermi levels, Extrinsic material, Dopants, Charge neutrality, Position of the Fermi level. Chapter 5 – Carrier transport (3 hours): Drift, Scattering, Mobility, Conductivity/resistivity, Diffusion, Einstein relation Chapter 6 – Non-equilibrium carrier populations (4 hours): Carrier generation and recombination, Excess carriers, Carrier lifetime, Ambipolar transport, Shockley-Haynes Experiment, Quasi-fermi levels Chapter 7 – P-N Junctions (4 hours): Structure, Built-in (diffusion) potential, E fields, Space charge width, Reverse bias, Junction capacitance. Chapter 8 – Diode equation (7 hours): Current-voltage relationship, small signal model (diffusion resistance and diffusion capacitance), Generation-recombination currents, Junction breakdown, Charge storage and transients, Devices – Rectifiers, Light emitting diodes, Lasers, Solar-cells, detectors and tunnel diodes. Skip chapter 9. Chapter 10 – Bipolar transistors (7 hours): Transistor action, Modes of operation, Minority carrier distributions, Calculation of current components, Current gain, Non-ideal effects (early effects and current crowding), Equivalent circuit models. Chapter 11 – MOS transistor fundamentals (11 hours): Junction FETs, MOS capacitors (Inversion, depletion layer thickness, flat-band voltage, threshold voltage, C-V characteristics), MOSFET structure and I-V relationship. HW policy: One HW every Monday, due the next Monday. 25% of final grade. Emphasis on effort. Late HWs will not be accepted Exams: 3 term exams (each 15% of final grade) and one final exam (30%). One term exam to be a take-home.