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SFT1423 Ordering number : EN1509A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET SFT1423 General-Purpose Switching Device Applications Features • • ON-resistance 4V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Gate-to-Source Voltage Drain Current (PW≤10μs) Drain Current (DC) ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature PW≤10μs, duty cycle≤1% Tc=25°C °C 1.5 5.5 7.0 7.5 2 3 0 t o 0.2 0.6 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2.5 0.8 1 0.5 1.2 1.5 0.5 0.5 1.2 SFT1423-TL-E 2.3 6.5 5.0 7.0 SFT1423-E 4 5.5 2.3 W --55 to +150 0.5 3 1.0 Tstg 2.3 0.8 1.6 2 A A W 0.85 1 2 10 °C 7003-004 0.6 V 150 Package Dimensions unit : mm (typ) 0.85 0.7 V ±20 Tch 7518-004 6.5 5.0 500 20 Package Dimensions unit : mm (typ) 4 Unit VDSS VGSS 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA SANYO : TP Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251 • Minimum Packing Quantity : 500 pcs./bag Marking (TP, TP-FA) • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252 • Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL Electrical Connection 2, 4 T1423 1 LOT No. TL 3 http://semicon.sanyo.com/en/network 60612 TKIM/62409PA TKIM TC-00001987 No. A1509-1/9 SFT1423 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=10mA, VGS=0V VDS=400V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA 1.2 VDS=10V, ID=1A 1.1 RDS(on)1 ID=1A, VGS=10V 3.8 4.9 RDS(on)2 ID=0.5A, VGS=4V 3.9 5 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Rise Time td(on) tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD 500 VDS=30V, f=1MHz See specified Test Circuit. VDS=200V, VGS=10V, ID=2A V 100 μA ±10 μA 2.6 1.9 Ω Ω 175 pF 32 pF 6 pF 7.4 ns 8.8 ns 42 ns 27 ns 8.7 nC 1.1 nC 2.9 IS=2A, VGS=0V V S 0.9 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=200V VIN ID=1A RL=200Ω VIN D PW=10μs D.C.≤1% VOUT G SFT1423 P.G 50Ω S Ordering Information Device SFT1423-E SFT1423-TL-E Package Shipping TP 500pcs./bag TP-FA 700pcs./reel memo Pb Free No. A1509-2/9 SFT1423 ID -- VDS 1.6 0.8 0.6 0.4 0.8 0.6 0.4 VGS=2.5V 0.2 0.2 0 1.0 0 1 2 3 4 5 6 7 8 9 Drain-to-Source Voltage, VDS -- V 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Source Voltage, VGS -- V IT14752 RDS(on) -- VGS 10 0 10 --25°C 1.0 1.2 C 3.0V 25° 1.2 1.4 Ta= 75° C 1.4 Drain Current, ID -- A 16 .0 V Drain Current, ID -- A 1.6 VDS=10V 1.8 0V 4. 10 1.8 ID -- VGS 2.0 .0 V 2.0 RDS(on) -- Ta 12 5.0 IT11453 ID=0.5A 8 1.0A 7 6 5 4 3 2 4 6 8 3 | yfs | -- ID °C 25 = Ta 2 C 5° --2 75 °C 0.1 7 5 3 2 0.01 7 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 20 40 60 80 100 120 140 160 IT11455 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 0.001 0.2 2 3 0.4 0.8 3 Ciss, Coss, Crss -- pF 3 tf 2 tr 10 td(on) Ciss 5 3 5 7 1.0 Drain Current, ID -- A 2 100 7 5 Coss 3 2 10 Crss 7 5 7 2 3 1.4 IT14757 f=1MHz 2 5 1.2 5 7 td(off) 1.0 Ciss, Coss, Crss -- VDS 7 VDD=200V VGS=10V 100 0.6 Diode Forward Voltage, VSD -- V IT14787 SW Time -- ID 2 Switching Time, SW Time -- ns 0 3 2 Drain Current, ID -- A 3 0.1 --20 5 3 2 2 3 --40 Ambient Temperature, Ta -- °C VDS=10V 1.0 7 5 2 IT14754 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 4 0 --60 10 Gate-to-Source Voltage, VGS -- V 6 25°C 0 8 Ta=7 5°C 2 A =1 D I , .5A 0V =0 1 = ,ID S V G =4V S VG 10 --25°C 9 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta=25°C 5 IT14758 3 2 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT14759 No. A1509-3/9 SFT1423 VGS -- Qg 10 10 7 5 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 3 2 1 2 3 4 5 6 7 8 PD -- Ta 10 he 0.6 sin k 0.4 0.2 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14762 s ms 0m op 0μ s 1m 10 10 s era tio Operation in this area is limited by R DS (on). n( Ta =2 5°C ) Tc=25°C Single pulse 2 3 5 7 10 2 3 5 7 100 2 Drain-to-Source Voltage, VDS -- V PD -- Tc 25 0.8 at DC IT14760 1.0 No 10 0.01 1.0 Allowable Power Dissipation, PD -- W 1.2 9 PW≤10μs ID=2A 3 2 1 0 IDP=10A 1.0 7 5 0.1 7 5 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 3 2 2 0 ASO 3 2 VDS=200V ID=2A 3 5 7 IT14788 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT14763 No. A1509-4/9 SFT1423 Taping Specification SFT1423-TL-E No. A1509-5/9 SFT1423 Outline Drawing SFT1423-TL-E Land Pattern Example Mass (g) Unit 0.282 mm * For reference Unit: mm 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No. A1509-6/9 SFT1423 Bag Packing Specification SFT1423-E No. A1509-7/9 SFT1423 Outline Drawing SFT1423-E Mass (g) Unit 0.315 mm * For reference No. A1509-8/9 SFT1423 Note on usage : Since the SFT1423 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A1509-9/9