Download ECH8420 DATA SHEET General-Purpose Switching Device Applications

ECH8420
Ordering number : EN8993A
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8420
General-Purpose Switching Device
Applications
Features
•
•
•
•
ON-resistance RDS(on)1=5.2mΩ (typ.)
1.8V drive.
Halogen free compliance.
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Gate-to-Source Voltage
Drain Current (DC)
Allowable Power Dissipation
Channel Temperature
PD
Tch
Storage Temperature
Tstg
V
14
A
50
A
When mounted on ceramic substrate (900mm2×0.8mm)
1.6
W
150
°C
--55 to +150
°C
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
unit : mm (typ)
7011A-002
Top View
ECH8420-TL-H
2.9
Packing Type : TL
Marking
0.15
8
5
ZA
2.3
0 t o 0.02
Lot No.
TL
4
1
0.9
0.65
Electrical Connection
0.3
8
7
6
5
1
2
3
4
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
0.07
2.8
V
±12
PW≤10μs, duty cycle≤1%
Package Dimensions
0.25
Unit
20
ID
IDP
Drain Current (Pulse)
0.25
Ratings
VDSS
VGSS
Bot t om View
SANYO : ECH8
http://semicon.sanyo.com/en/network
71112 TKIM/O1911PE TKIM TC-00002660 No.8993-1/7
ECH8420
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
typ
Unit
max
ID=1mA, VGS=0V
VDS=20V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=7A
14.5
RDS(on)1
ID=7A, VGS=4.5V
5.2
6.8
mΩ
RDS(on)2
ID=4A, VGS=2.5V
8
11.5
mΩ
RDS(on)3
ID=2A, VGS=1.8V
15
22.5
mΩ
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Turn-OFF Delay Time
Ratings
min
V(BR)DSS
IDSS
Input Capacitance
Rise Time
Conditions
20
V
0.4
1
μA
±10
μA
1.3
V
S
2430
pF
410
pF
Crss
330
pF
td(on)
tr
21
ns
88
ns
210
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=10V, VGS=4.5V, ID=14A
IS=14A, VGS=0V
115
ns
29
nC
4.8
nC
8.7
nC
0.75
1.2
V
Switching Time Test Circuit
4.5V
0V
VDD=10V
VIN
ID=7A
RL=1.43Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ECH8420
P.G
50Ω
S
Ordering Information
Device
ECH8420-TL-H
Package
Shipping
memo
ECH8
3,000pcs./reel
Pb Free and Halogen Free
No.8993-2/7
ECH8420
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
30
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID=2A
4A
7A
25
20
15
10
5
0
0
2
4
6
8
10
25°
10
7
5
C
C
5°
-2
=-
Ta
3
2
°C
75
1.0
7
5
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
Drain Current, ID -- A
SW Time -- ID
1000
5 7 100
IT16534
td(off)
2
tf
7
tr
5
3
td(on)
2
10
0.1
2
3
5 7 1.0
2
0
50
100
1.8
IT16531
150
200
IT16533
IS -- VSD
VGS=0V
1.0
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
0.9
1.0
IT16535
f=1MHz
7
5
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
5
100
5
10000
7
1.6
A
I =4
2.5V, D
=
S
VG
=7A
4.5V, I D
V GS=
10
0.01
7
5
3
2
0.001
VDD=15V
VGS=10V
3
15
100
7
5
3
2
3
2
0.1
0.01
1.4
Ambient Temperature, Ta -- °C
VDS=10V
3
2
1.2
2A
, I D=
=1.8V
S
VG
IT16532
| yfs | -- ID
100
7
5
1.0
20
0
--50
12
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
Gate-to-Source Voltage, VGS -- V
0.8
RDS(on) -- Ta
25
Ta=25°C
35
0.6
Gate-to-Source Voltage, VGS -- V
IT16625
RDS(on) -- VGS
40
1.0
°C
2
--2
5
VGS=1.5V
Ta=
75°C
4
25
°C
6
5°C
25°
C
--25
°C
8
ID -- VGS
21
20 VDS=10V
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
0.2
0.4
Ta=
7
10.0V
10
Drain Current, ID -- A
Drain Current, ID -- A
12
2.5V
1 .8 V
8.0V 6.0V 4
.5V
ID -- VDS
14
3
Ciss
2
1000
7
5
Coss
3
Crss
2
3
5 7 10
Drain Current, ID -- A
2
3
5 7 100
IT16536
100
0
2
4
6
8
10
12
14
16
Drain-to-Source Voltage, VDS -- V
18
20
IT16537
No.8993-3/7
ECH8420
VGS -- Qg
100
7
5
3
2
VDS=10V
ID=14A
4.0
3.5
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
4.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
5
10
15
20
25
Total Gate Charge, Qg -- nC
PD -- Ta
Allowable Power Dissipation, PD -- W
1.8
30
IT16538
ASO
IDP=50A (PW≤10μs)
1m
ID=14A
10
7
5
3
2
DC
ms
10
0m
s
op
era
tio
n(
1.0
7
5
3
2
0.1
7
5
3
2
s
10
Operation in this
area is limited by RDS(on).
Ta
=
25
°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
Drain-to-Source Voltage, VDS -- V
5 7 100
IT16539
When mounted on ceramic substrate
(900mm2×0.8mm)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT16540
No.8993-4/7
ECH8420
Embossed Taping Specification
ECH8420-TL-H
No.8993-5/7
ECH8420
Outline Drawing
ECH8420-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No.8993-6/7
ECH8420
Note on usage : Since the ECH8420 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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This catalog provides information as of July, 2012. Specifications and information herein are subject
to change without notice.
PS No.8993-7/7