Download SFT1423 DATA SHEET General-Purpose Switching Device Applications

SFT1423
Ordering number : EN1509A
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
SFT1423
General-Purpose Switching Device
Applications
Features
•
•
ON-resistance
4V drive
•
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Gate-to-Source Voltage
Drain Current (PW≤10μs)
Drain Current (DC)
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
PW≤10μs, duty cycle≤1%
Tc=25°C
°C
1.5
5.5
7.0
7.5
2
3
0 t o 0.2
0.6
1 : Gate
2 : Drain
3 : Source
4 : Drain
2.3
2.5
0.8
1
0.5
1.2
1.5
0.5
0.5
1.2
SFT1423-TL-E
2.3
6.5
5.0
7.0
SFT1423-E
4
5.5
2.3
W
--55 to +150
0.5
3
1.0
Tstg
2.3
0.8
1.6
2
A
A
W
0.85
1
2
10
°C
7003-004
0.6
V
150
Package Dimensions unit : mm (typ)
0.85
0.7
V
±20
Tch
7518-004
6.5
5.0
500
20
Package Dimensions unit : mm (typ)
4
Unit
VDSS
VGSS
1.2
2.3
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
SANYO : TP
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
Marking
(TP, TP-FA)
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Packing Type (TP-FA) : TL
Electrical Connection
2, 4
T1423
1
LOT No.
TL
3
http://semicon.sanyo.com/en/network
60612 TKIM/62409PA TKIM TC-00001987 No. A1509-1/9
SFT1423
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Conditions
Ratings
min
typ
Unit
max
V(BR)DSS
IDSS
ID=10mA, VGS=0V
VDS=400V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
1.2
VDS=10V, ID=1A
1.1
RDS(on)1
ID=1A, VGS=10V
3.8
4.9
RDS(on)2
ID=0.5A, VGS=4V
3.9
5
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
Rise Time
td(on)
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
500
VDS=30V, f=1MHz
See specified Test Circuit.
VDS=200V, VGS=10V, ID=2A
V
100
μA
±10
μA
2.6
1.9
Ω
Ω
175
pF
32
pF
6
pF
7.4
ns
8.8
ns
42
ns
27
ns
8.7
nC
1.1
nC
2.9
IS=2A, VGS=0V
V
S
0.9
nC
1.2
V
Switching Time Test Circuit
10V
0V
VDD=200V
VIN
ID=1A
RL=200Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
SFT1423
P.G
50Ω
S
Ordering Information
Device
SFT1423-E
SFT1423-TL-E
Package
Shipping
TP
500pcs./bag
TP-FA
700pcs./reel
memo
Pb Free
No. A1509-2/9
SFT1423
ID -- VDS
1.6
0.8
0.6
0.4
0.8
0.6
0.4
VGS=2.5V
0.2
0.2
0
1.0
0
1
2
3
4
5
6
7
8
9
Drain-to-Source Voltage, VDS -- V
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Gate-to-Source Voltage, VGS -- V
IT14752
RDS(on) -- VGS
10
0
10
--25°C
1.0
1.2
C
3.0V
25°
1.2
1.4
Ta=
75°
C
1.4
Drain Current, ID -- A
16
.0
V
Drain Current, ID -- A
1.6
VDS=10V
1.8
0V
4.
10
1.8
ID -- VGS
2.0
.0
V
2.0
RDS(on) -- Ta
12
5.0
IT11453
ID=0.5A
8
1.0A
7
6
5
4
3
2
4
6
8
3
| yfs | -- ID
°C
25
=
Ta
2
C
5°
--2
75
°C
0.1
7
5
3
2
0.01
7
0.001
2 3
5 7 0.01
2 3
5 7 0.1
2 3
5 7 1.0
20
40
60
80
100
120
140
160
IT11455
IS -- VSD
VGS=0V
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
0.001
0.2
2 3
0.4
0.8
3
Ciss, Coss, Crss -- pF
3
tf
2
tr
10
td(on)
Ciss
5
3
5
7
1.0
Drain Current, ID -- A
2
100
7
5
Coss
3
2
10
Crss
7
5
7
2
3
1.4
IT14757
f=1MHz
2
5
1.2
5
7
td(off)
1.0
Ciss, Coss, Crss -- VDS
7
VDD=200V
VGS=10V
100
0.6
Diode Forward Voltage, VSD -- V
IT14787
SW Time -- ID
2
Switching Time, SW Time -- ns
0
3
2
Drain Current, ID -- A
3
0.1
--20
5
3
2
2
3
--40
Ambient Temperature, Ta -- °C
VDS=10V
1.0
7
5
2
IT14754
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
5
4
0
--60
10
Gate-to-Source Voltage, VGS -- V
6
25°C
0
8
Ta=7
5°C
2
A
=1
D
I
,
.5A
0V
=0
1
=
,ID
S
V G =4V
S
VG
10
--25°C
9
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Ta=25°C
5
IT14758
3
2
0
5
10
15
20
25
30
35
40
Drain-to-Source Voltage, VDS -- V
45
50
IT14759
No. A1509-3/9
SFT1423
VGS -- Qg
10
10
7
5
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
9
7
6
5
4
3
3
2
1
2
3
4
5
6
7
8
PD -- Ta
10
he
0.6
sin
k
0.4
0.2
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14762
s
ms
0m
op
0μ
s
1m
10
10
s
era
tio
Operation in
this area is
limited by R DS (on).
n(
Ta
=2
5°C
)
Tc=25°C
Single pulse
2
3
5
7 10
2
3
5
7 100
2
Drain-to-Source Voltage, VDS -- V
PD -- Tc
25
0.8
at
DC
IT14760
1.0
No
10
0.01
1.0
Allowable Power Dissipation, PD -- W
1.2
9
PW≤10μs
ID=2A
3
2
1
0
IDP=10A
1.0
7
5
0.1
7
5
Total Gate Charge, Qg -- nC
Allowable Power Dissipation, PD -- W
3
2
2
0
ASO
3
2
VDS=200V
ID=2A
3
5
7
IT14788
20
15
10
5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT14763
No. A1509-4/9
SFT1423
Taping Specification
SFT1423-TL-E
No. A1509-5/9
SFT1423
Outline Drawing
SFT1423-TL-E
Land Pattern Example
Mass (g) Unit
0.282 mm
* For reference
Unit: mm
7.0
7.0
2.5
2.0
1.5
2.3
2.3
No. A1509-6/9
SFT1423
Bag Packing Specification
SFT1423-E
No. A1509-7/9
SFT1423
Outline Drawing
SFT1423-E
Mass (g) Unit
0.315 mm
* For reference
No. A1509-8/9
SFT1423
Note on usage : Since the SFT1423 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1509-9/9