* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project
Download IGC82T170S8RM
Survey
Document related concepts
Automatic test equipment wikipedia , lookup
Operational amplifier wikipedia , lookup
Schmitt trigger wikipedia , lookup
Integrated circuit wikipedia , lookup
Thermal runaway wikipedia , lookup
Power electronics wikipedia , lookup
Switched-mode power supply wikipedia , lookup
Rectiverter wikipedia , lookup
Opto-isolator wikipedia , lookup
Resistive opto-isolator wikipedia , lookup
Thermal copper pillar bump wikipedia , lookup
Current mirror wikipedia , lookup
Surface-mount technology wikipedia , lookup
Transcript
IGC82T170S8RM IGBT3 Power Chip Features: • 1700V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • power modules C Applications: • drives G E BDTIC Chip Type VCE IC Die Size Package IGC82T170S8RM 1700V 70A 9.10 x 9.06 mm2 sawn on foil Mechanical Parameters Raster size 9.10 x 9.06 Emitter pad size (incl. gate pad) 6.88 x 6.88 Gate pad size 0.806 x 1.302 mm2 Area total 82.4 Thickness 190 µm Wafer size 200 mm Max.possible chips per wafer Passivation frontside Pad metal 320 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Backside metal Die bond Electrically conductive glue or solder Wire bond Al, <500µm ∅ 0.65mm ; max 1.2mm Reject ink dot size Recommended storage environment Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, AIM PMD D CID CLS, L7763O, Edition 0.9, 29.05.2008 www.BDTIC.com/infineon IGC82T170S8RM Maximum Ratings Parameter Symbol Value Unit 1700 V 1) A Collector-Emitter voltage, Tvj =25 °C VCE DC collector current, limited by Tvj, max IC Pulsed collector current, tp limited by Tvj, max Ic,puls 210 A Gate emitter voltage VGE ±20 V Junction temperature range Tvj -40 ... +175 °C Operating junction temperature Tvj -40...+150 °C tSC 10 µs BDTIC Short circuit data 2) VGE = 15V, VCC = 1000V, Tvj = 150°C I C , m a x = 140A, V C E , m a x = 1700V Reverse bias safe operating area 2 ) (RBSOA) Tvj ≤ 1 5 0 °C 1) depending on thermal properties of assembly 2) not subject to production test - verified by design/characterization Static Characteristics (tested on wafer), Tvj =25 °C Parameter Symbol Conditions Value min. typ. max. Unit Collector-Emitter breakdown voltage V(BR)CES VGE=0V , IC= 2 mA 1700 Collector-Emitter saturation voltage VCE(sat) VGE=15V, IC=70A 1.6 1.9 2.2 Gate-Emitter threshold voltage VGE(th) IC=2.8mA , VGE=VCE 5.2 5.8 6.4 Zero gate voltage collector current ICES VCE=1700V , VGE=0V 2 µA Gate-Emitter leakage current IGES VCE=0V , VGE=20V 300 nA Integrated gate resistor rG V Ω 16 Dynamic Characteristics (not subject to production test - verified by design / characterization), Tvj =25 °C Parameter Symbol Conditions Value min. typ. Input capacitance Cies V C E =25V, 5500 Output capacitance Coes VGE=0V, 230 Reverse transfer capacitance Cres f=1MHz 180 Edited by INFINEON Technologies, AIM PMD D CID CLS, L7763O, Edition 0.9, 29.05.2008 www.BDTIC.com/infineon max. Unit pF IGC82T170S8RM Further Electrical Characteristics Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. BDTIC Edited by INFINEON Technologies, AIM PMD D CID CLS, L7763O, Edition 0.9, 29.05.2008 www.BDTIC.com/infineon IGC82T170S8RM Chip Drawing BDTIC E E E E T G E = Emitter G = Gate T = Test pad do not contact Edited by INFINEON Technologies, AIM PMD D CID CLS, L7763O, Edition 0.9, 29.05.2008 www.BDTIC.com/infineon IGC82T170S8RM Description AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date BDTIC Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, AIM PMD D CID CLS, L7763O, Edition 0.9, 29.05.2008 www.BDTIC.com/infineon