Download PD166015GR Data Sheet MOS INTEGRATED CIRCUIT

Preliminary Data Sheet
PD166015GR
R07DS0595EJ0100
Rev.1.00
Jan 19, 2012
MOS INTEGRATED CIRCUIT
Description
The PD166015 is an N-channel high side driver with built-in charge pump and embedded protection function. It is
also a linear solenoid driver with a built-in differential amplifier.
When device is overtemperature or overcurrent is generated in output MOS, the protection function operates to prevent
destruction and degradation of the product. When the current flows through the external shunt resistor near the input
part of the differential amplifier, the voltage drops at each end of the resistor. The output current can be monitored when
the microcomputer reads the output voltage from the amplifier.
Features
 High temperature operation (Tch = 175°C MAX.)
 Built-in charge pump circuit
 Low on-state resistance
RDS(ON) = 100 m MAX. (VIN = VIH, IO = 1.5A, Tch = 25°C)
 Built-in protection circuit
 Current limitation
 Overtemperature protection
 Built-in differential amplifier (gain = 8 times)
 Package: Power SOP 8
Application
 Switching of all types of 14 V DC grounded loads, such as inductor, resistor and capacitor
Ordering Information
Part No.
PD166015GR-E1-AY
PD166015GR-E2-AY
R07DS0595EJ0100 Rev.1.00
Jan 19, 2012
Lead Plating
Sn
Sn
Packing
Tape 2500 p/reel
Tape 2500 p/reel
Package
Power SOP 8
Power SOP 8
Page 1 of 15
PD166015GR
Block Diagram
VCC
Pin 5
Pin 8
Pin 1
IN
Charge pump
Overtemperature
detection
Current
Limitation
Overcurrent
detection
Pin 2
OUT
IN+
+
AMP
–
IN–
GND
Pin 4
Pin 6
Pin 7
Pin 3
Pin Configuration
 Power SOP 8
IN
1
8
VCC
AMP
2
7
IN–
GND
3
6
IN+
OUT
4
5
VCC
(Top view)
Pin Functions
Pin No.
1
2
3
4
5
6
7
8
Pin Name
IN
AMP
Input pin
Differential amplifier output pin
GND
OUT
VCC
IN+
IN–
VCC
Ground pin
High side output pin
Power supply pin
Differential amplifier + input pin
Differential amplifier – input pin
Power supply pin
R07DS0595EJ0100 Rev.1.00
Jan 19, 2012
Function
Page 2 of 15
PD166015GR
Absolute Maximum Ratings
(Ta = 25°C, unless otherwise specified)
Item
Power supply voltage
IN input voltage
IN input current
Amplifier input voltage
Amplifier input current
Output current
Output negative voltage
Power dissipation
Operation temperature
Storage temperature
Current monitor output voltage
Current monitor output current
Note:
Symbol
VCC1
VCC2
VIN1
VIN2
IIN
VIN
IIN
IOA
VOA
PD
Topt
Tstg
VAMP
IAMP
Rating
–0.3 to +35
40
–0.5 to +7.0
5
10
–1.1 to +18
10
2
VCC–60
1.50
–40 to +125
–55 to +175
8.0
10
Unit
V
V
V
V
mA
V
mA
A
V
W
°C
°C
V
mA
Condition
 = 250 ms
IN pin
VCC = 0 V, t = 0.5 s, IN pin
RIN = 1 k, IN+/IN– pin
IN pin, IN+/IN– pin
Ta = 25°C Note
When mounted on a epoxy PCB (where FR-4 is 10 cm  10 cm, dimension of copper foil is 15% and thickness of
copper foil is 35 m), PW = 10 s
R07DS0595EJ0100 Rev.1.00
Jan 19, 2012
Page 3 of 15
PD166015GR
Electrical Characteristics
(VCC = 8 to 16 V, Tch = –40 to +175°C, unless otherwise specified)
Item
Input voltage
Drain to source on-state
resistance
RDS(ON)
Overcurrent detection
IS
MIN.
3.0
0
30
–10
—
–0.24
—
—
2
Overtemperature
detection
Turn on delay time
Turn off delay time
Rise time
Fall time
Negative output voltage
Tth
(175)
—
—
°C
Note 2
tD(ON)
tD(OFF)
tON
tOFF
–VO
tS
—
—
—
—
—
—
5
50
30
20
—
—
50
200
200
200
VCC–50
14
s
s
s
s
V
ms
RL = 9.3 , VCC = 14 V,
VIN = 5.0 V–0 V
IO = –60 mA
Overcurrent
DS
—
—
30
%
Overcurrent
VOAMP
0
—
7.5
V
RLAMP = 50 k (connect to ground)
IOAMP
(SOURCE)
—
—
–0.1
mA
Rsh = 0.25 , Ish = 1.50 A,
VOAMP  0.977
IOAMP
(SINK)
SRCM
GAIN
VOGAINW(0.05)
VOGAINW(0.10)
VOGAINW(0.15)
VOGAINW(0.50)
VOGAINW(1.00)
0.1
—
—
mA
—
—
–47.0
–23.8
–16.0
–5.4
–3.1
–2.3
0.3
8
—
—
—
—
—
—
—
—
47.0
23.8
16.0
5.4
3.1
2.3
Rsh = 0.25 , Ish = 1.50 A,
VOAMP  1.023
RLAMP = 50 k (connect to ground)
Input current
Standby current
Output leakage current
At over
current
condition
Output
oscillation
cycle
Output on
duty
Amplifier output voltage
range
Amplifier output current
Amplifier slew rate
Amplifier gain
Current detection
accuracy
Symbol
VIH
VIL
IIH
IIL
ICCH
IOL
VOGAINW(1.50)
TYP.
—
—
—
—
—
—
80
150
—
MAX.
7.0
1.0
400
—
7
—
100
180
(10)
Unit
V
V
A
A
mA
mA
m
m
A
V/s
Condition
VCC = 4.5 to 16 V
VIN = 5.5 V
VIN = 0 V
VIN = VIH or VIL Note 1
VIN = VIL, VO = 0 V
VIN = VIH, IO = 1.5 A
Tch = 25°C
Tch = 150°C
Note 2
Times
%
%
%
%
%
%
Rsh = 0.25 
VCC = 8 to 16 V
RLAMP = 50 k
(connect to ground)
Ish = 0.05 A
Ish = 0.10 A
Ish = 0.15 A
Ish = 0.50 A
Ish = 1.00 A
Ish = 1.50 A
Notes: 1. OUT current is not included.
2. Not subject to production test, specified by design.
R07DS0595EJ0100 Rev.1.00
Jan 19, 2012
Page 4 of 15
PD166015GR
Definition of Switching Time
50%
Input voltage: VIN
50%
tD(ON)
tD(OFF)
90%
90%
Output voltage: VOUT
10%
10%
tON
tOFF
14 V
VCC
IN
VIN
OUT
VOUT
RL
9.3 Ω
GND
Switching Measurement Circuit
Truth Table
Item
Normal operation
Overtemperature detection
Overcurrent detection
R07DS0595EJ0100 Rev.1.00
Jan 19, 2012
VIN
H
L
H
L
H
L
VOUT
H
L
L
L
Chopping
L
Page 5 of 15
PD166015GR
Outline of Functions
Pre-Driver (Charge Pump Circuit) ON/OFF Control
When the input voltage of the input pin (IN) is high level (3.0 V or more), the output MOS (Nch) turns on.
When the output voltage of the input pin (IN) is low level (1.0 V or less), the output MOS (Nch) turns off.
Charge pump circuit is built-in to drive the output MOS (Nch) that is connected to the high side.
"H"
5V
VIN
GND
VCC
"L"
"H"
"H"
"L"
"L"
ON
VOUT
(Load resistace) GND OFF
ON
"L"
ON
OFF
OFF
OFF
Overcurrent Detection Circuit
This circuit detects overcurrent to output pin (OUT) caused by short circuit etc., and feeds back detection signal to
control circuit.
When the overcurrent is detected, the current limitation circuit and the control circuit start operation. The output current
is restricted and chopping operation begins.
Current Limitation Circuit
This circuit limits the output current by using the detection signal from the overcurrent detection circuit, preventing
destruction and degradation of the product.
Overtemperature Detection Circuit
This circuit detects overtemperature by output MOS (Nch) driving, and feeds back detection signal to control circuit.
When the circuit detects overtemperature, the protection function of the control circuit operates and output is shutdown.
Output MOS (Nch) automatically restarts when channel temperature cools down after shutdown.
"H"
5V
VIN
"L"
VOUT
Tch
R07DS0595EJ0100 Rev.1.00
Jan 19, 2012
OFF
"L"
ON
OFF
ON
OFF
GND
VCC
THIH
THIL
Page 6 of 15
PD166015GR
Differential Amplifier Circuit
This amplifier circuit amplifies the differential input voltage (IN+ and IN–) to the differential amplifier eight times.
When the current flows through the external shunt resistor (Rsh) near the input part of the differential amplifier, the
voltage drops at each end of the resistor. The output current can be monitored when the A/D converter in the
microcomputer reads the output voltage from the amplifier.
The linear solenoid driver monitors the current through the differential amplifier circuit, and drives constant current by
controlling the PWM of the output MOS.
VOGAINW(1.50)
VOGAINW(1.00)
3V
VOGAINW(0.50)
2V
1V
VOGAINW(0.15)
VOAMP
0.3 V
0.2 V
VOGAINW(0.10)
VOGAINW(0.05)
0.1 V
0.05 A
0.1 A
0.15 A
0.5 A
1A
1.5 A
Ish
VCC
VCC
IN
Ish
OUT
IN+
RIN = 1 kΩ
AMP
VOAMP V
RLAMP
= 50 kΩ
IN–
RIN = 1 kΩ
Rsh
= 0.25 Ω
GND
Amplifier Characteristic Measurement Circuit
R07DS0595EJ0100 Rev.1.00
Jan 19, 2012
Page 7 of 15
PD166015GR
Timing Chart
Overtemperature
release
VIN
Overtemperature
detection
Overcurrent
detection
Overcurrent
release
VOUT
Normal
operation
Overtemperature
detection
Normal
operation
Overcurrent detection
Normal
operation
Example of Application Circuit
Battery etc.
VCC
IN
OUT Port
Control
Circuit
OUT
MCU
10 kΩ
A/D IN
AMP
0.47 μF
IN+
RIN = 1 kΩ
IN–
RIN = 1 kΩ
IN+
IN–
Rsh
0.25 Ω
GND
R07DS0595EJ0100 Rev.1.00
Jan 19, 2012
Page 8 of 15
PD166015GR
Typical Characteristics
INPUT VOLTAGE vs.
POWER SUPPLY VOLTAGE
INPUT VOLTAGE vs.
AMBIENT TEMPERATURE
3.0
2.5
VIH
2.0
VIL
VIH/VIL - Input Voltage - V
VIH/VIL - Input Voltage - V
3.0
1.5
1.0
0.5
0
0
5
10
15
1.0
0.5
0
50
100
150
200
HIGH LEVEL INPUT CURRENT vs.
AMBIENT TEMPERATURE
LOW LEVEL INPUT CURRENT vs.
AMBIENT TEMPERATURE
10
IIL - Low Level Input Current - μA
IIH - High Level Input Current - μA
1.5
Ta - Ambient Temperature - °C
300
250
200
150
100
50
0
50
100
150
8
6
4
2
0
–2
–4
–6
–8
–10
–50
200
0
50
100
150
200
Ta - Ambient Temperature - °C
Ta - Ambient Temperature - °C
STANDBY CURRENT vs.
AMBIENT TEMPERATURE
OUTPUT LEAKAGE CURRENT vs.
AMBIENT TEMPERATURE
1.0
0
IOL - Output Leakage Current - A
ICCH - Standby Current - mA
VIL
VCC - Power Supply Voltage - V
350
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
–50
VIH
2.0
0
–50
20
400
0
–50
2.5
0
50
100
150
Ta - Ambient Temperature - °C
R07DS0595EJ0100 Rev.1.00
Jan 19, 2012
200
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
–50
0
50
100
150
200
Ta - Ambient Temperature - °C
Page 9 of 15
PD166015GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
AMBIENT TEMPERATURE
200
200
180
180
RDS(ON) - Drain to Source
On-state Resistance - mΩ
RDS(ON) - Drain to Source
On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
POWER SUPPLY VOLTAGE
160
140
120
100
80
60
40
20
0
5
10
15
120
100
80
60
40
0
–50
20
50
100
150
Ta - Ambient Temperature - °C
OVERCURRENT DETECTION vs.
POWER SUPPLY VOLTAGE
OVERCURRENT DETECTION vs.
AMBIENT TEMPERATURE
8.0
8.0
7.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
0
VCC - Power Supply Voltage - V
IS - Overcurrent Detection - A
IS - Overcurrent Detection - A
140
20
0
5
10
15
200
6.0
5.0
4.0
3.0
2.0
1.0
0
–50
20
0
50
100
150
200
VCC - Power Supply Voltage - V
Ta - Ambient Temperature - °C
OUTPUT OSCILATION CYCLE AT OVERCURRENT
CONDITION vs. POWER SUPPLY VOLTAGE
OUTPUT OSCILATION CYCLE AT OVERCURRENT
CONDITION vs. AMBIENT TEMPERATURE
7.0
tS - Output Oscillation Cycle
at Overcurrent Condition - ms
7.0
tS - Output Oscillation Cycle
at Overcurrent Condition - ms
160
6.0
5.0
4.0
3.0
2.0
1.0
0
0
5
10
15
VCC - Power Supply Voltage - V
R07DS0595EJ0100 Rev.1.00
Jan 19, 2012
20
6.0
5.0
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
200
Ta - Ambient Temperature - °C
Page 10 of 15
PD166015GR
OUTPUT ON DUTY AT OVERCURRENT CONDITION vs.
AMBIENT TEMPERATURE
16
16
14
14
DS - Output On Duty
at Overcurrent Condition - %
DS - Output On Duty
at Overcurrent Condition - %
OUTPUT ON DUTY AT OVERCURRENT CONDITION vs.
POWER SUPPLY VOLTAGE
12
10
8
6
4
2
0
0
5
10
15
8
6
4
2
50
100
150
200
Ta - Ambient Temperature - °C
TURN ON DELAY TIME vs.
AMBIENT TEMPERATURE
TURN OFF DELAY TIME vs.
AMBIENT TEMPERATURE
160
tD(OFF) - Turn Off Delay Time - μs
18
16
14
12
10
8
6
4
2
0
50
100
150
140
120
100
80
60
40
20
0
–50
200
0
50
100
150
200
Ta - Ambient Temperature - °C
Ta - Ambient Temperature - °C
RISE TIME vs.
AMBIENT TEMPERATURE
FALL TIME vs.
AMBIENT TEMPERATURE
100
100
90
90
80
80
70
60
50
40
30
70
60
50
40
30
20
20
10
10
0
–50
0
VCC - Power Supply Voltage - V
tOFF - Fall Time - μs
tD(ON) - Turn On Delay Time - μs
tON - Rise Time - μs
10
0
–50
20
20
0
–50
12
0
50
100
150
Ta - Ambient Temperature - °C
R07DS0595EJ0100 Rev.1.00
Jan 19, 2012
200
0
–50
0
50
100
150
200
Ta - Ambient Temperature - °C
Page 11 of 15
PD166015GR
NEGATIVE OUTPUT VOLTAGE vs.
AMBIENT TEMPERATURE
VO - Negative Output Voltage - V
0
–10
–20
–30
–40
–50
–60
–70
–80
–50
0
50
100
150
200
Ta - Ambient Temperature - °C
CURRENT DETECTION ACCURACY vs.
AMBIENT TEMPERATURE
CURRENT DETECTION ACCURACY vs.
AMBIENT TEMPERATURE
25
VOGAINW(0.10) - Current Detection
Accuracy - %
VOGAINW(0.05) - Current Detection
Accuracy - %
50
40
30
20
10
0
–10
–20
–30
–40
–50
–50
0
50
100
150
15
10
5
0
–5
–10
–15
–20
–25
–50
200
0
50
100
150
200
Ta - Ambient Temperature - °C
Ta - Ambient Temperature - °C
CURRENT DETECTION ACCURACY vs.
AMBIENT TEMPERATURE
CURRENT DETECTION ACCURACY vs.
AMBIENT TEMPERATURE
20
6
VOGAINW(0.5) - Current Detection
Accuracy - %
VOGAINW(0.15) - Current Detection
Accuracy - %
20
15
10
5
0
–5
–10
–15
–20
–50
0
50
100
150
Ta - Ambient Temperature - °C
R07DS0595EJ0100 Rev.1.00
Jan 19, 2012
200
4
2
0
–2
–4
–6
–50
0
50
100
150
200
Ta - Ambient Temperature - °C
Page 12 of 15
PD166015GR
CURRENT DETECTION ACCURACY vs.
AMBIENT TEMPERATURE
CURRENT DETECTION ACCURACY vs.
AMBIENT TEMPERATURE
3
VOGAINW(1.5) - Current Detection
Accuracy - %
VOGAINW(1.0) - Current Detection
Accuracy - %
4
3
2
1
0
–1
–2
–3
–4
–50
0
50
100
150
2
1
0
–1
–2
–3
–50
200
Ta - Ambient Temperature - °C
0
50
100
150
200
Ta - Ambient Temperature - °C
Transient Thermal Resistance Characteristics
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(t) - Transient Thermal Resistance - °C/W
1000
Rth(ch-a) = 125°C/W
100
Rth(ch-c) = 30°C/W
10
1
When mounted on a epoxy PCB
(where FR-4 is 10 cm × 10 cm, dimension of copper foil is 15% and
thickness of copper foil is 35 μm)
0.1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0595EJ0100 Rev.1.00
Jan 19, 2012
Page 13 of 15
PD166015GR
8
5
1
4
6.0 ± 0.3
4.4
5.37 MAX.
0.8
0.15
+0.10
–0.05
1.44
0.05 MIN.
1.8 MAX.
Package Drawing
0.5 ± 0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
Taping Information
There are two types (-E1, -E2) of taping depending on the direction of the device.
Reel side
Draw-out side
−E1 TYPE
−E2 TYPE
Marking Information
This figure indicates the marking items and arrangement. However, details of the letterform, the size and the position
aren't indicated.
6015
Part No.
Lead-free mark
Internal administrative code
Pin 1 indication
Lot number
R07DS0595EJ0100 Rev.1.00
Jan 19, 2012
Page 14 of 15
PD166015GR
Recommended Soldering Conditions
The PD166015 should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, contact a Renesas Electronics sales
representative.
For technical information, see the following website.
Semiconductor Package Mount Manual (http://www.renesas.com/prod/package/manual/)
 PD166015GR-E1-AY Note: Power SOP 8
 PD166015GR-E2-AY Note: Power SOP 8
Process
Conditions
Infrared reflow
Maximum temperature (package’s surface temperature): 260°C or below,
Time at maximum temperature: 10 seconds or less,
Time at temperature higher than 220°C: 60 seconds or less,
Preheating time at 160°C to 180°C: 60 to 120 seconds, Times: Three times,
Flux: Rosin flux with low chlorine (0.2 Wt% or below) recommended.
Partial Heating
Method
Pin temperature: 300°C or below,
Heat time: 3 seconds or less (Per each side of the device),
Flux: Rosin flux with low chlorine (0.2 Wt% or below) recommended.
Note:
Symbol
IR60-00-3
—
Pb-free (This product does not contain Pb in the external electrode.)
R07DS0595EJ0100 Rev.1.00
Jan 19, 2012
Page 15 of 15
PD166015GR Data Sheet
Revision History
Rev.
1.00
Date
Jan 19, 2012
Description
Summary
Page
—
First Edition Issued
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implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2012 Renesas Electronics Corporation. All rights reserved.
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