Download PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier PN100/PN100A/MMBT100/MMBT

PN100/PN100A/MMBT100/MMBT100A
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier applications at collector currents to 300mA.
• Sourced from process 10.
C
E
TO-92
1
B
SOT-23
1. Emitter 2. Base 3. Collector
Mark: PN100/PN100A
Absolute Maximum Ratings*
Ta = 25°C unless otherwise noted
Symbol
VCEO
Collector-Emitter Voltage
Parameter
Ratings
VCBO
Collector-Base Voltage
75
VEBO
Emitter-Base Voltage
6.0
IC
Collector current
TJ, Tstg
Junction and Storage Temperature
- Continuous
Units
45
500
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2.
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Thermal Characteristics TA=25°C unless otherwise noted
Max.
Symbol
Parameter
PN100
PN100A
625
5.0
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
83.3
RθJA
Thermal Resistance, Junction to Ambient
200
Units
*MMBT100
*MMBT100A
350
2.8
mW
mW/°C
357
°C/W
°C/W
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06."
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
PN100/PN100A/MMBT100/MMBT100A Rev. C1
1
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
October 2008
Symbol
Parameter
Off Characteristics
Collector-Base Breakdown Voltage
BVCBO
Test Condition
Min.
Max.
Units
IC = 10μA, IE = 0
75
BVCEO
Collector-Emitter Breakdown Voltage *
IC = 1mA, IB = 0
45
V
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 10μA, IC = 0
6.0
V
ICBO
Collector-Base Cutoff Current
VCB = 60V
50
nA
ICES
Collector-Emiitter Cutoff Current
VCE = 40V
50
nA
IEBO
Emitter Cutoff Current
VEB = 4V
50
nA
On Characteristics
hFE
DC Current Gain
IC = 100μA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V*
IC = 150mA, VCE = 5.0V *
100
100A
100
100A
100
100A
80
240
100
300
100
100
100
450
600
350
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA
IC = 200mA, IB = 20mA
0.2
0.4
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA
IC = 200mA, IB = 20mA
0.85
1.0
V
V
Small Signal Characteristics
fT
Current Gain Bandwidth Product
VCE = 20V, IC = 20mA
Cobo
Output Capacitance
VCB = 5.0V, f = 1.0MHz
NF
Noise Figure
IC = 100μA, VCE = 5.0V
RG = 2.0kΩ, f = 1.0KHz
250
100
100A
MHz
4.5
pF
5.0
4.0
dB
dB
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
PN100/PN100A/MMBT100/MMBT100A Rev. C1
2
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
Electrical Characteristics TC=25°C unless otherwise noted
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
Vce = 5V
125 °C
300
25 °C
200
- 40 °C
100
0
10
20 30
50
100
200 300
I C - COLLECTOR CURRENT (mA)
500
Voltage vs Collector Current
0.4
β = 10
0.3
25 °C
0.2
125 °C
0.1
- 40 °C
1
Base-Emitter Saturation
Voltage vs Collector Current
Collector Current
1
0.8
- 40 °C
25 °C
0.6
125 °C
0.4
β = 10
0.2
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
300
1
- 40 °C
0.8
0.6
25 °C
125 °C
0.4
V CE = 5V
0.2
1
10
100
I C - COLLECTOR CURRENT (mA)
500
Figure 4. Base-Emitter On Voltage
vs Collector Current
100
10
f = 1.0 MHz
CAPACITANCE (pF)
VCB = 60V
1
0.1
25
400
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
I CBO - COLLE CTOR CURRENT (nA)
10
100
I C - COLLECTOR CURRENT (mA)
Figure 1. Typical Pulsed Current Gain
vs Collector Current
VBEON - BASE-EMITTER ON VOLTAGE (V)
VBESAT - COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
vs Collector Current
400
50
75
100
125
TA - AMBIE NT TEMP ERATURE (° C)
10
Cib
Cob
1
0.1
0.1
150
1
10
Vce - COLLECTOR VOLTAGE (V)
100
Figure 6. Input and Output Capacitance
vs Reverse Voltag
Figure 5. Collector Cutoff Current
vs Ambient Temperature
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
PN100/PN100A/MMBT100/MMBT100A Rev. C1
3
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
Typical Characteristics
(Continued)
300
P D - POWER DISSIPATION (mW)
700
270
ts
240
TIME (nS)
210
180
IB1 = IB2 = Ic / 10
V cc = 10 V
150
120
90
tf
60
30
0
10
tr
td
20
30
50
100
200
I C - COLLECTOR CURRENT (mA)
600
500
400
300
200
100
0
300
TO-92
SOT-23
0
25
50
75
100
TEMPERATURE ( o C)
125
150
Figure 8. Power Dissipation vs
Ambient Temperature
Figure 7. Switching Times vs
Collector Current
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
PN100/PN100A/MMBT100/MMBT100A Rev. C1
4
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
Typical Characteristics
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
Package Dimension (TO92)
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
PN100/PN100A/MMBT100/MMBT100A Rev. C1
5
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
Package Dimension (SOT23)
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
PN100/PN100A/MMBT100/MMBT100A Rev. C1
6
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
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the right to make changes at any time without notice to improve design.
Obsolete
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Rev. I31
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
PN100/PN100A/MMBT100/MMBT100A Rev. C1
7
PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier
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