Download RURD4120S9A_F085 4A, 1200V Ultrafast Diodes Features

RURD4120S9A_F085
Data Sheet
March 2009
4A, 1200V Ultrafast Diodes
Features
The RURD4120S9A_F085 are ultrafast diodes with
soft recovery characteristics (trr < 70ns). They have low
forward voltage drop and are silicon nitride passivated
ion-implanted epitaxial planar construction.
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <70ns
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
• Avalanche Energy Rated
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Planar Construction
• Qualified to ACE Q101
• RoHS Compliant
Applications
Formerly developmental type TA49036.
• Switching Power Supplies
• Power Switching Circuits
Ordering Information
PART NUMBER
RURD4120S9A_F085
9A_F085
• General Purpose
PACKAGE
BRAND
TO-252
UR4120
Packaging
JEDEC STYLE TO-252
Symbol
CATHODE
(FLANGE)
K
CATHODE
ANODE
A
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
RURD4120S9A_F085
UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
1200
V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM
1200
V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR
1200
V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF(AV)
(TC = 152oC)
4
A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
(Square Wave, 20kHz)
8
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60Hz)
40
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
50
W
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL
10
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
-65 to 175
oC
©2009 Fairchild Semiconductor Corporation
1
RURD4120S9A_F085 Rev. A
RURD4120S9A_F085
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
SYMBOL
MIN
TYP
MAX
UNITS
IF = 4A
-
-
2.1
V
IF = 4A, TC = 150oC
-
-
1.9
V
VR = 1200V
-
-
100
µA
VR = 1200V, TC = 150oC
-
-
500
µA
IF = 1A, dIF /dt = 200A/µs
-
-
70
ns
IF = 4A, dIF /dt = 200A/µs
-
-
90
ns
ta
IF = 4A, dIF /dt = 200A/µs
-
40
-
ns
tb
IF = 4A, dIF /dt = 200A/µs
-
28
-
ns
QRR
IF = 4A, dIF /dt = 200A/µs
-
335
-
nC
VR = 10V, IF = 0A
-
15
-
pF
3
oC/W
VF
IR
trr
CJ
TEST CONDITION
RθJC
-
-
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb .
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery time.
CJ = Junction capacitance.
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
100
IR , REVERSE CURRENT (µA)
IF , FORWARD CURRENT (A)
20
10
175oC
25oC
100oC
1
175oC
10
100oC
1
0.1
0.01
25oC
0.001
0.5
0
0.5
1
1.5
2
2.5
3
200
400
600
800
1000
1200
VR , REVERSE VOLTAGE (V)
VF , FORWARD VOLTAGE (V)
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
©2009 Fairchild Semiconductor Corporation
0
2
RURD4120S9A_F085 Rev. A
RURD4120S9A_F085
Typical Performance Curves
100
TC = 25oC, dIF/dt = 200A/µs
TC = 100oC, dIF/dt = 200A/µs
60
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
75
(Continued)
trr
45
ta
30
tb
15
0
0.5
1
80
trr
60
ta
40
tb
20
0
0.5
4
1
IF , FORWARD CURRENT (A)
FIGURE 4. trr , ta AND tb CURVES vs FORWARD CURRENT
IF(AV) , AVERAGE FORWARD CURRENT (A)
FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT
125
t, RECOVERY TIMES (ns)
TC = 175oC, dIF/dt = 200A/µs
100
trr
75
50
ta
tb
25
0
0.5
4
IF , FORWARD CURRENT (A)
1
5
4
DC
3
SQ. WAVE
2
1
0
125
4
135
145
155
165
175
TC , CASE TEMPERATURE (oC)
IF , FORWARD CURRENT (A)
FIGURE 5. trr , ta AND tb CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
CJ , JUNCTION CAPACITANCE (pF)
75
60
45
30
15
0
0
50
100
150
200
VR , REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2009 Fairchild Semiconductor Corporation
3
RURD4120S9A_F085 Rev. A
RURD4120S9A_F085
Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
DUT
RG
VGE
CURRENT
SENSE
IF
+
-
IGBT
t1
dIF
trr
dt
ta
tb
0
VDD
0.25 IRM
t2
IRM
FIGURE 8. trr TEST CIRCUIT
FIGURE 9. trr WAVEFORMS AND DEFINITIONS
I = 1A
L = 20mH
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
VAVL
L
CURRENT
SENSE
R
+
VDD
IL
IL
I V
Q1
VDD
DUT
t0
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
©2009 Fairchild Semiconductor Corporation
t1
t2
t
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
4
RURD4120S9A_F085 Rev. A
RURD4120S9A_F085
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Definition
Advance Information
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Datasheet contains the design specifications for product development. Specifications
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First Production
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Semiconductor. The datasheet is for reference information only.
Rev. I39
©2009 Fairchild Semiconductor Corporation
5
RURD4120S9A_F085 Rev. A