Download RHRD660S9A_F085 6A, 600V Hyperfast Diodes Features

RHRD660S9A_F085
Data Sheet
May 2013
6A, 600V Hyperfast Diodes
Features
The RHRD660S9A_F085 is hyperfast diodes with
soft recovery characteristics (trr < 30ns). It has half the
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC
This device is intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Its low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
• Qualified to AEC Q101
• RoHS Compliant
Applications
• Switching Power Supplies
Formerly developmental type TA49057.
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
RHRD660S9A_F085
PACKAGE
BRAND
TO-252
RHR660
Packaging
Symbol
JEDEC STYLE TO-252
K
CATHODE
(FLANGE)
CATHODE
A
Absolute Maximum Ratings
ANODE
TC = 25oC, Unless Otherwise Specified
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
(TC = 152oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
Maximum Lead Temperature for Soldering
(Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TPKG
©2011 Fairchild Semiconductor Corporation
RHRD660S9A_F085
600
600
600
6
UNITS
V
V
V
A
12
A
60
A
50
10
W
mJ
oC
-55 to 175
300
260
oC
oC
RHRD660S9A_F085 Rev.C2
RHRD660S9A_F085
Electrical Specifications
SYMBOL
TC = 25oC, Unless Otherwise Specified
TEST CONDITION
MIN
TYP
MAX
UNITS
IF = 6A
-
-
2.1
V
IF = 6A, TC = 150oC
-
-
1.7
V
VR = 600V
-
-
100
µA
VR = 600V, TC = 150oC
-
-
500
µA
IF = 1A, dIF/dt = 200A/µs
-
-
30
ns
IF = 6A, dIF/dt = 200A/µs
-
-
35
ns
ta
IF = 6A, dIF/dt = 200A/µs
-
16
-
ns
tb
IF = 6A, dIF/dt = 200A/µs
-
8.5
-
ns
QRR
IF = 6A, dIF/dt = 200A/µs
-
45
-
nC
VR = 10V, IF = 0A
-
20
-
pF
-
-
3
oC/W
VF
IR
trr
CJ
RθJC
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction capacitance.
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
30
1000
IR , REVERSE CURRENT (µA)
IF , FORWARD CURRENT (A)
175oC
10
175oC
100oC
25oC
1
0.5
0
0.5
1
1.5
2
2.5
VF , FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
©2011 Fairchild Semiconductor Corporation
3
100
100oC
10
1
0.1
25oC
0.01
0
100
200
300
400
500
600
VR , REVERSE VOLTAGE (V)
FIGURE 2. REVERSE CURRENT vs REVERSE
RHRD660S9A_F085 Rev. C2
RHRD66
RHRD660S9A_F085
Typical Performance Curves
(Continued)
30
50
TC = 25oC, dIF/dt = 200A/µs
TC = 100oC, dIF/dt = 200A/µs
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
25
trr
20
15
ta
10
tb
5
0
0.5
1
40
trr
30
ta
20
tb
10
0
0.5
6
1
IF , FORWARD CURRENT (A)
IF , FORWARD CURRENT (A)
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
IF(AV) , AVERAGE FORWARD CURRENT (A)
75
t, RECOVERY TIMES (ns)
TC = 175oC, dIF/dt = 200A/µs
60
trr
45
30
ta
tb
15
0
0.5
1
6
6
6
5
DC
4
SQ. WAVE
3
2
1
0
140
145
150
155
160
165
170
175
TC , CASE TEMPERATURE (oC)
IF , FORWARD CURRENT (A)
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
CJ , JUNCTION CAPACITANCE (pF)
50
40
30
20
10
0
0
50
100
150
200
VR , REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2011 Fairchild Semiconductor Corporation
RHRD660S9A_F085 Rev. C2
RHRD660S9A_F085
Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
DUT
CURRENT
SENSE
RG
IF
+
VGE
-
IGBT
t1
VDD
dIF
trr
dt
ta
tb
0
0.25 IRM
t2
IRM
FIGURE 8. trr TEST CIRCUIT
FIGURE 9. trr WAVEFORMS AND DEFINITIONS
IMAX = 1A
L = 20mH
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
VAVL
L
CURRENT
SENSE
R
+
VDD
IL
IL
I V
Q1
VDD
DUT
t0
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
©2011 Fairchild Semiconductor Corporation
t1
t2
t
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RHRD660S9A_F085 Rev.C2
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Rev. I54