Download FGB20N60SFD_F085 600V, 20A Field Stop IGBT F G

FGB20N60SFD_F085
600V, 20A Field Stop IGBT
Features
General Description
• High current capability
Using novel field-stop IGBT technology, Fairchild’s new series
of field-stop IGBTs offers the optimum performance for
automotive chargers, inverters, and other applications where
low conduction and switching losses are essential.
• Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A
• High input impedance
• Fast switching
• Qualified to Automotive Requirements of AEC-Q101
• RoHS complaint
Applications
• Inverters, SMPS, PFC, UPS
• Automotive
Auxiliaries
Chargers,
Converters,
High
Voltage
C
C
G
D2-PAK
G
E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Units
VCES
Collector to Emitter Voltage
600
V
VGES
Gate to Emitter Voltage
± 20
V
40
A
20
A
o
60
A
o
IC
ICM (1)
IF
25oC
Collector Current
@ TC =
Collector Current
@ TC = 100oC
Pulsed Collector Current
@ TC = 25 C
Diode Forward Current
@ TC = 25 C
20
A
Diode Forward Current
@ TC = 100oC
10
A
60
A
Maximum Power Dissipation
@ TC = 25oC
208
W
Maximum Power Dissipation
@ TC = 100oC
Pulsed Diode Maximum Forward Current
IFM(1)
PD
Operating Junction Temperature
TJ
Tstg
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
83
W
-55 to +150
o
C
-55 to +150
o
C
300
o
C
Thermal Characteristics
Symbol
Parameter
Ratings
Units
RθJC(IGBT) ( 2)
Thermal Resistance, Junction to Case
0.6
o
RθJC(Diode)
Thermal Resistance, Junction to Case
2.6
oC/W
Typ.
Units
75
oC/W
Symbol
RθJA
Parameter
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
©2013 Fairchild Semiconductor Corporation
FGB20N60SFD_F085 Rev. C1
1
C/W
www.fairchildsemi.com
FGB20N60SFD_F085 600V, 20A Field Stop IGBT
October 2013
Device Marking
Device
Package
Packaging
Type
FGB20N60SFD
FGB20N60SFD_F085
TO-263
Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Max Qty
Qty per Tube
per Box
50ea
-
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
-
-
V
V/oC
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA
ΔBVCES
ΔTJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250μA
-
0.79
-
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
250
ICES at 80%*BVCES, 150oC
-
-
250
VGE = VGES, VCE = 0V
-
-
±400
nA
IC = 250μA, VCE = VGE
IGES
G-E Leakage Current
μA
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
4.0
4.8
6.5
V
IC = 20A, VGE = 15V
-
2.2
2.85
V
IC = 20A, VGE = 15V,
TC = 125oC
-
2.4
-
V
-
940
1250
pF
VCE = 30V, VGE = 0V,
f = 1MHz
-
110
146
pF
-
40
53
pF
13
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
-
10
tr
Rise Time
-
16
21
ns
td(off)
Turn-Off Delay Time
-
90
120
ns
tf
Fall Time
Eon
Turn-On Switching Loss
VCC = 400V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25oC
-
24
36
ns
-
0.31
0.41
mJ
Eoff
Turn-Off Switching Loss
-
0.13
0.21
mJ
Ets
Total Switching Loss
-
0.44
0.59
mJ
td(on)
Turn-On Delay Time
-
12
16
ns
tr
Rise Time
-
16
21
ns
td(off)
Turn-Off Delay Time
-
95
126
ns
tf
Fall Time
-
28
43
ns
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
VCC = 400V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125oC
-
0.45
0.60
mJ
-
0.21
0.38
mJ
Ets
Total Switching Loss
-
0.66
0.88
mJ
Qg
Total Gate Charge
-
63
95
nC
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
©2013 Fairchild Semiconductor Corporation
FGB20N60SFD_F085 Rev. C1
VCE = 400V, IC = 20A,
VGE = 15V
2
-
7
11
nC
-
32
48
nC
www.fairchildsemi.com
FGB20N60SFD_F085 600V, 20A Field Stop IGBT
Package Marking and Ordering Information
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max
o
-
1.9
2.5
125oC
-
1.7
-
TC = 25oC
-
111
-
o
TC = 125 C
-
204
-
TC = 25oC
-
174
244
-
463
-
TC = 25 C
IF = 10A
TC =
IES = 10A, dIES/dt = 200A/μs
TC =
125oC
Units
V
ns
nC
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
2:Rthjc for D2-PAK: according to Mil standard 883-1012 test method.
Rthja for D2-PAK: according to JESD51-2, test method environmental condition and JESD51-3,low effective thermal conductivity test board for leaded surface mount package.
thermal measurements. JESD51-2: Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air).
©2013 Fairchild Semiconductor Corporation
FGB20N60SFD_F085 Rev. C1
3
www.fairchildsemi.com
FGB20N60SFD_F085 600V, 20A Field Stop IGBT
Electrical Characteristics of the Diode
Figure 1. Typical Output Characteristics
60
o
Collector Current, IC [A]
T C = 25 C
20V
10V
40
20
VGE = 8V
0
0.0
o
T C = 125 C
15V
12V
Collector Current, IC [A]
60
Figure 2. Typical Output Characteristics
1.5
3.0
4.5
Collector-Emitter Voltage, V CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
40
20
VGE = 8V
Common Emitter
VCE = 20V
Collector Current, IC [A]
Collector Current, IC [A]
T C = 25oC
o
T C = 125 C
40
20
o
TC = 25 C
o
1
2
3
4
Collector-Emitter Voltage, VCE [V]
20
5
40A
20A
2
IC = 10A
1
25
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
©2013 Fairchild Semiconductor Corporation
2
4
6
8
10
Gate-Emitter Voltage,V GE [V]
20
3
FGB20N60SFD_F085 Rev. C1
0
12
Figure 6. Saturation Voltage vs. VGE
Collector-Emitter Voltage, V CE [V]
Common Emitter
VGE = 15V
TC = 125 C
40
0
0
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector-Emitter Voltage, VCE [V]
6.0
60
Common Emitter
VGE = 15V
4
1.5
3.0
4.5
Collector-Emitter Voltage, V CE [V]
Figure 4. Transfer Characteristics
60
0
15V
12V
10V
0
0.0
6.0
20V
o
T C = -40 C
16
12
8
IC = 10A
40A
4
20A
0
4
Common Emitter
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGB20N60SFD_F085 600V, 20A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
o
T C = 25 C
16
12
8
IC = 10A
4
40A
20A
0
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
T C = 125 C
16
12
8
IC = 10A
4
0
20
Figure 9. Capacitance Characteristics
0
4
8
12
16
Gate-Emitter Voltage, V GE [V]
20
Figure 10. Gate charge Characteristics
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
o
Gate-Emitter Voltage, VGE [V]
Cies
2000
o
TC = 25 C
1500
1000
C oes
500
Cres
0
0.1
TC = 25 C
12
300V
VCC = 100V
9
200V
6
3
0
1
10
Collector-Emitter Voltage, V CE [V]
30
Figure 11. SOA Characteristics
0
20
40
60
Gate Charge, Qg [nC]
80
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
100
10μs
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
100μs
10
1ms
o
Switching Time [ns]
Collector Current, Ic [A]
40A
20A
15
2500
Capacitance [pF]
Common Emitter
o
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, V CE [V]
20
Figure 8. Saturation Voltage vs. VGE
10 ms
DC
1
*Notes:
0.1
o
1. T C = 25 C
TC = 25 C
o
TC = 125 C
tr
td(on)
10
o
0.01
2. T J = 150 C
3. Single Pulse
1
10
100
Collector-Emitter Voltage, V CE [V]
©2013 Fairchild Semiconductor Corporation
FGB20N60SFD_F085 Rev. C1
1000
0
5
10
20
30
40
Gate Resistance, RG [Ω]
50
www.fairchildsemi.com
FGB20N60SFD_F085 600V, 20A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
1000
Figure 14. Turn-on Characteristics vs.
Collector Current
100
Common Emitter
VCC = 600V, VGE = 15V
I C = 20A
Common Emitter
VGE = 15V, RG = 10Ω
o
TC = 25 C
o
T C = 25 C
Switching Time [ns]
Switching Time [ns]
o
T C = 125 C
td(off)
100
tf
10
0
10
20
30
40
50
TC = 125oC
tr
10
td(on)
60
0
10
Gate Resistance, RG [Ω]
Figure 15. Turn-off Characteristics vs.
Collector Current
500
30
40
Figure 16. Switching Loss vs. Gate Resistance
3
Common Emitter
VGE = 15V, RG = 10Ω
Common Emitter
VCC = 600V, VGE = 15V
TC = 25oC
IC = 20A
o
Switching Loss [mJ]
TC = 125 C
Switching Time [ns]
20
Collector Current, IC [A]
td(off)
100
tf
TC = 25oC
1
o
TC = 125 C
Eon
Eoff
10
0
10
20
30
0.1
40
0
Collector Current, IC [A]
Figure 17. Switching Loss vs. Collector Current
10
20
30
40
Gate Resistance, RG [Ω]
50
60
Figure 18. Turn off Switching
SOA Characteristics
10
100
Common Emitter
VGE = 15V, RG = 10Ω
o
o
Eon
TC = 125 C
1
Collector Current, IC [A]
Switching Loss [mJ]
TC = 25 C
0.1
Eoff
10
Safe Operating Area
0.01
0
10
20
30
1
40
Collector Current, IC [A]
©2013 Fairchild Semiconductor Corporation
FGB20N60SFD_F085 Rev. C1
VGE = 15V, TC = 125oC
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
6
www.fairchildsemi.com
FGB20N60SFD_F085 600V, 20A Field Stop IGBT
Typical Performance Characteristics
Figure 20. Typical Reverse Current vs.
Reverse Voltage
40
100
10
10
Reverse Current, IR [uA]
Forward Current, IF [A]
Figure 19. Forward Characteristics
o
T J = 125 C
o
T J = 75 C
1
TJ = 25oC
0.1
0
1
2
3
Forward Voltage, V F [V]
TJ = 75oC
0.1
1E-3
4
o
TJ = 25 C
0
100
200
300
400
500
Reverse Voltage, VR [V]
600
Figure 22. Reverse Recovery Time
150
Reverse Recovery Time, trr [ns]
250
Stored Recovery Charge, Qrr [nC]
1
0.01
Figure 21. Stored Charge
200
200A/μs
150
100
di/dt = 100A/ μs
50
0
o
TJ = 125 C
0
5
10
15
120
di/dt = 100A/ μ s
90
200A/ μs
60
30
0
20
5
10
15
20
Forward Current, IF [A]
Forward Current, IF [A]
Figure 23.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.2
0.1
0.1
PDM
0.05
t1
0.02
0.01
single pulse
0.01
1E-5
1E-4
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
©2013 Fairchild Semiconductor Corporation
FGB20N60SFD_F085 Rev. C1
7
www.fairchildsemi.com
FGB20N60SFD_F085 600V, 20A Field Stop IGBT
Typical Performance Characteristics
FGB20N60SFD_F085 600V, 20A Field Stop IGBT
Mechanical Dimensions
D2PAK
Dimensions in Millimeters
©2013 Fairchild Semiconductor Corporation
FGB20N60SFD_F085 Rev. C1
8
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
9
Rev. I66
FGB20N60SFD_F085 600V, 20A Field Stop IGBT
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