Download FGH75T65UPD_F085 650V, 75A Field Stop Trench IGBT F G

FGH75T65UPD_F085
650V, 75A Field Stop Trench IGBT
Features
General Description
175oC
• Maximum Junction Temperature : TJ =
Using Novel Field Stop Trench IGBT Technology, Fairchild’s
new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital
Power Generator where low conduction and switching losses
are essential.
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: VCE(sat) = 1.65V(Typ.) @ IC = 75A
• High input impedance
Applications
• Tightened Parameter Distribution
• RoHS compliant
• Automotive chargers, Converters, High Voltage Auxiliaries
• Qualified to Automotive Requirements of AEC-Q101
• Solar Inverters, UPS, Digital Power Generator
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Units
VCES
Collector to Emitter Voltage
650
V
VGES
Gate to Emitter Voltage
± 20
V
IC
o
Collector Current
@ TC = 25 C
150
A
Collector Current
@ TC = 100oC
75
A
ICM (1)
Pulsed Collector Current
IF
Diode Forward Current
@ TC = 25oC
Diode Forward Current
@ TC = 100oC
IFM(1)
PD
SCWT
Pulsed Diode Maximum Forward Current
225
A
75
A
50
A
225
A
Maximum Power Dissipation
@ TC = 25oC
375
W
Maximum Power Dissipation
@ TC = 100oC
187
W
Short Circuit Withstand Time
@ TC = 25oC
5
us
TJ
Operating Junction Temperature
-55 to +175
oC
Tstg
Storage Temperature Range
-55 to +175
o
C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
o
C
Thermal Characteristics
Symbol
RθJC(IGBT) ( 2)
RθJC(Diode)
Parameter
Thermal Resistance, Junction to Case
Symbol
RθJA
Ratings
Thermal Resistance, Junction to Case
Parameter
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
©2013 Fairchild Semiconductor Corporation
FGH75T65UPD_F085 Rev. C1
1
Units
0.4
o
0.86
oC/W
Typ.
Units
40
oC/W
C/W
www.fairchildsemi.com
FGH75T65UPD_F085 650V 75A Field Stop IGBT
November 2013
Device Marking
Device
Package
Packing Type
Qty per Tube
FGH75T65UPD
FGH75T65UPD_F085
TO-247
Tube
30ea
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
650
-
-
V
-
0.65
-
V/oC
-
-
250
ICES at 80%*BVCES, 175 C
-
-
3600
μA
VGE = VGES, VCE = 0V
-
-
±400
nA
IC = 75mA, VCE = VGE
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA
ΔBVCES
ΔTJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 1mA
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
o
IGES
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
4.0
6.0
7.5
V
IC = 75A, VGE = 15V
-
1.69
2.3
V
IC = 75A, VGE = 15V,
TC = 175oC
-
2.21
-
V
-
5665
-
pF
VCE = 30V, VGE = 0V,
f = 1MHz
-
205
-
pF
-
100
-
pF
-
32
48
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
-
43
71
ns
td(off)
Turn-Off Delay Time
-
166
216
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Ets
Total Switching Loss
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Ets
Tsc
VCC = 400V, IC = 75A,
RG = 3Ω, VGE = 15V,
Inductive Load, TC = 25oC
-
24
33
ns
-
2.85
4.80
mJ
-
1.20
1.60
mJ
-
4.05
5.3
mJ
-
30
-
ns
-
57
-
ns
-
176
-
ns
-
21
-
ns
-
4.45
-
mJ
-
1.60
-
mJ
Total Switching Loss
-
6.05
-
mJ
Short Circuit Withstand Time
5
-
-
us
VCC = 400V, IC = 75A,
RG = 3Ω, VGE = 15V,
Inductive Load, TC = 175oC
VGE = 15V, VCC < 400V,
Rg = 10 Ω
Notes:
1:Repetitive rating: Pulse width limited by max junction temperature.
2:Rthjc for TO-247 : according to Mil standard 883-1012 test method. Rthja for TO-247 : according to JESD51-2, test method
environmental condition and JESD51-10, test boards for through hole perimeter leaded package thermal measurements.
JESD51-3 : Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Package.
FGH75T65UPD_F085 Rev. C1
2
www.fairchildsemi.com
FGH75T65UPD_F085 650V 75A Field Stop IGBT
Package Marking and Ordering Information
Symbol
Qg
Parameter
Test Conditions
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCE = 400V, IC = 75A,
VGE = 15V
Electrical Characteristics of the Diode
Symbol
(Continued)
Parameter
VFM
Diode Forward Voltage
Erec
Reverse Recovery Energy
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
FGH75T65UPD_F085 Rev. C1
Min.
Typ.
Max
Units
-
385
578
nC
-
45
68
nC
-
210
315
nC
Units
TC = 25°C unless otherwise noted
Test Conditions
IF = 50A
IF =50A, dIF/dt = 200A/μs
3
Min.
Typ.
Max
TC = 25oC
-
2.1
2.6
TC = 175oC
-
1.7
-
TC = 175oC
-
40
-
TC =
25oC
V
uJ
-
43
85
TC = 175oC
-
162
-
TC = 25oC
-
83
170
TC = 175oC
-
805
-
ns
nC
www.fairchildsemi.com
FGH75T65UPD_F085 650V 75A Field Stop IGBT
Electrical Characteristics of the IGBT
Figure 1. Typical Output Characteristics
225
VGE= 20V
Figure 2. Typical Output Characteristics
225
VGE= 20V
15V
15V
180
Collector Current, IC [A]
Collector Current, IC [A]
12V
135
90
10V
45
180
12V
135
90
10V
45
8V
8V
0
0
TC = 25oC
2
4
6
8
Collector-Emitter Voltage, V CE [V]
o
TC = 175 C
0
10
Figure 3. Typical Saturation Voltage
Characteristics
0
225
Common Emitter
VCE = 400V
Collector Current, IC [A]
Collector Current, IC [A]
200
175
150
125
100
75
Common Emitter
VGE = 15V
50
o
180
TC = 25 C
o
TC = 175 C
135
90
45
T C = 25oC
25
o
T C = 175 C
0
0
1
2
3
4
Collector-Emitter Voltage, V CE [V]
5
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3
6
9
12
Gate-Emitter Voltage,VGE [V]
15
20
Common Emitter
VGE = 15V
Collector-Emitter Voltage, V CE [V]
Common Emitter
150A
3
75A
2
IC = 40A
1
25
50
75
100
125
150
175
o
Collector-EmitterCase Temperature, TC [ C]
FGH75T65UPD_F085 Rev. C1
0
Figure 6. Saturation Voltage vs. VGE
4
Collector-Emitter Voltage, VCE [V]
10
Figure 4. Transfer Characteristics
225
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
T C = -40oC
16
150A
12
75A
8
I C = 40A
4
0
4
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGH75T65UPD_F085 650V 75A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
o
TC = 25 C
16
150A
12
75A
8
IC = 40A
4
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
Common Emitter
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, V CE [V]
20
o
TC = 175 C
16
150A
12
75A
8
I C = 40A
4
0
20
Figure 9. Capacitance Characteristics
Gate-Emitter Voltage, V GE [V]
1000
Coes
Common Emitter
VGE = 0V, f = 1MHz
100
C res
12
400V
200V
9
VCC = 300V
6
3
Common Emitter
o
o
TC = 25 C
T C = 25 C
0
1
10
Collector-Emitter Voltage, V CE [V]
30
Figure 11. SOA Characteristics
0
70
140
210
280
Gate Charge, Qg [nC]
350
420
Figure 12. Turn-on Characteristics vs.
Gate Resistance
500
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 75A
10μs
100
o
TC = 25 C
100μ s
1ms
10
td(on)
100
10 ms
DC
*Notes:
1
o
TC = 175 C
Switching Time [ns]
Collector Current, Ic [A]
20
15
C ies
50
8
12
16
Gate-Emitter Voltage, VGE [V]
Figure 10. Gate charge Characteristics
10000
Capacitance [pF]
4
o
1. TC = 25 C
tr
2. TJ ≤ 175oC
3. Single Pulse
0.1
1
10
100
Collector-Emitter Voltage, V CE [V]
FGH75T65UPD_F085 Rev. C1
10
1000
5
0
10
20
30
40
Gate Resistance, RG [Ω]
50
www.fairchildsemi.com
FGH75T65UPD_F085 650V 75A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
500
5000
td(off)
100
Switching Time [ns]
Switching Time [ns]
1000
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 75A
100
tr
td(on)
10
Common Emitter
VGE = 15V, RG = 3Ω
o
TC = 25oC
TC = 25 C
o
o
TC = 175 C
TC = 175 C
1
10
0
10
20
30
40
Gate Resistance, RG [Ω]
0
50
60
90
120
150
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs.
Gate Resistance
1000
100
Common Emitter
VCC = 400V, VGE = 15V
td(off)
IC = 75A
o
Switching Loss [mJ]
Switching Time [ns]
30
100
tf
10
Common Emitter
VGE = 15V, RG = 3Ω
TC = 25 C
TC = 175oC
Eon
10
Eoff
o
TC = 25 C
o
TC = 175 C
1
0
30
60
90
120
1
150
0
10
20
30
40
50
Gate Resistance, RG [Ω]
Collector Current, IC [A]
Figure 17. Switching Loss vs.
Collector Current
Figure 18. Turn off Switching
SOA Characteristics
250
50
Collector Current, IC [A]
Switching Loss [mJ]
200
10
150
Eon
100
1
Common Emitter
VGE = 15V, RG = 3Ω
Eoff
o
TC = 25 C
50
Safe Operating Area
TC = 175oC
0.1
0
30
60
90
120
o
VGE = 15V, TC ≤ 175 C
150
0
Collector Current, IC [A]
FGH75T65UPD_F085 Rev. C1
100
200
300
400
500
600
700
Collector-Emitter Voltage, VCE [V]
6
www.fairchildsemi.com
FGH75T65UPD_F085 650V 75A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Current Derating
Figure 20. Load Current Vs. Frequence
180
180
o
Average Forward Current, IF(AV) [A]
TC = 100 C
150
Collector Current, IC A]
150
120
90
60
120
90
Duty cycle : 50%
60
o
T = 100 C
C
Power Dissipation = 187W
30
30
VCC = 400V
load Current : peak of square wave
0
0
25
50
75 100 125 150
o
Case temperature, TC [ C]
175
0
1k
200
10k
100k
1M
Switching Frequency, f [Hz]
Figure 21. Forward Characteristics
Figure 22. Reverse Recovery Current
300
15
o
TC = 25 C
o
TC = 175 C
12
Reverse Current Irr [A]
Forward Current, IF [A]
100
o
TC = 175 C
10
o
T C = 125 C
o
TC = 75 C
di/dt = 200A/μ s
9
100A/ μs
6
di/dt = 200A/ μs
3
100A/μs
o
TC = 25 C
1
0
1
2
3
Forward Voltage, V F [V]
0
4
0
Figure 23. Stored Charge
60
80
Figure 24. Reverse Recovery Time
o
T C = 25 C
200A/μ s
o
Reverse Recovery Time, trr [ns]
Stored Recovery Charge, Qrr [uC]
40
IC [A]
250
1.0
T C = 175 C
0.8
di/dt = 100A/ μ s
0.6
0.4
200A/μs
0.2
0.0
20
di/dt = 100A/μ s
TC = 25oC
150
20
40
60
Forwad Current, IF [A]
FGH75T65UPD_F085 Rev. C1
80
di/dt = 100A/ μs
100
200A/μs
50
di/dt = 100A/ μs
0
0
200A/μs
o
TC = 175 C
200
0
20
40
60
80
Forward Current, IF [A]
7
www.fairchildsemi.com
FGH75T65UPD_F085 650V 75A Field Stop IGBT
Typical Performance Characteristics
FGH75T65UPD_F085 650V 75A Field Stop IGBT
Typical Performance Characteristics
Figure 25. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
0.5
0.5
0.1
0.2
0.1
0.05
0.01
0.02
0.01
single pulse
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Figure 26.Transient Thermal Impedance of Diode
Thermal Response [Zthjc]
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
single pulse
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
FGH75T65UPD_F085 Rev. C1
8
www.fairchildsemi.com
FGH75T65UPD_F085 650V 75A Field Stop IGBT
Mechanical Dimensions
TO - 247AB (FKS PKG CODE 001)
FGH75T65UPD_F085 Rev. C1
9
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
FGH75T65UPD_F085 Rev. C1
10
www.fairchildsemi.com
FGH75T65UPD_F085 650V 75A Field Stop IGBT
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
F-PFS™
2Cool™
PowerTrench®
The Power Franchise®
®
FRFET®
AccuPower™
PowerXS™
Global Power ResourceSM
AX-CAP™*
Programmable Active Droop™
Green Bridge™
BitSiC®
QFET®
TinyBoost™
Build it Now™
QS™
Green FPS™
TinyBuck™
CorePLUS™
Quiet Series™
Green FPS™ e-Series™
TinyCalc™
CorePOWER™
RapidConfigure™
Gmax™
TinyLogic®
CROSSVOLT™
GTO™
™
TINYOPTO™
CTL™
IntelliMAX™
TinyPower™
Saving our world, 1mW/W/kW at a time™
Current Transfer Logic™
ISOPLANAR™
TinyPWM™
DEUXPEED®
Marking Small Speakers Sound Louder SignalWise™
TinyWire™
Dual Cool™
SmartMax™
and Better™
TranSiC®
EcoSPARK®
SMART START™
MegaBuck™
TriFault Detect™
EfficentMax™
Solutions for Your Success™
MICROCOUPLER™
TRUECURRENT®*
ESBC™
SPM®
MicroFET™
μSerDes™
STEALTH™
MicroPak™
®
SuperFET®
MicroPak2™
®
SuperSOT™-3
MillerDrive™
Fairchild
UHC®
SuperSOT™-6
MotionMax™
Fairchild Semiconductor®
Ultra FRFET™
SuperSOT™-8
Motion-SPM™
FACT Quiet Series™
UniFET™
SupreMOS®
mWSaver™
FACT®
VCX™
SyncFET™
OptoHiT™
FAST®
VisualMax™
Sync-Lock™
OPTOLOGIC®
FastvCore™
VoltagePlus™
OPTOPLANAR®
®*
FETBench™
XS™
FlashWriter® *
®
FPS™