Download FGH40N60SMD_F085 600V, 40A Field Stop IGBT F G

FGH40N60SMD_F085
600V, 40A Field Stop IGBT
Features
General Description
• Maximum Junction Temperature : TJ = 175oC
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for
Automotive Chargers, Inverter, and other applications where
low conduction and switching losses are essential.
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: VCE(sat) = 1.9V(Typ.) @ IC = 40A
• High input impedance
• Tightened Parameter Distribution
Applications
• RoHS compliant
• Automotive chargers, Converters, High Voltage Auxiliaries
• Qualified to Automotive Requirements of AEC-Q101
• Inverters, SMPS,PFC, UPS
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
ICM (1)
IF
IFM(1)
PD
TJ
Collector Current
@ TC = 25oC
Collector Current
@ TC = 100oC
Pulsed Collector Current
25oC
Diode Forward Current
@ TC =
Diode Forward Current
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
@ TC = 25oC
Maximum Power Dissipation
@ TC = 100oC
Operating Junction Temperature
Tstg
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Ratings
Units
600
V
± 20
V
80
A
40
A
120
A
40
A
20
A
120
A
349
W
174
W
-55 to +175
o
-55 to +175
oC
C
300
o
Ratings
Units
C
Thermal Characteristics
Symbol
Parameter
o
RθJC(IGBT) ( 2)
Thermal Resistance, Junction to Case
0.43
RθJC(Diode)
Thermal Resistance, Junction to Case
1.8
oC/W
Typ.
Units
45
oC/W
Symbol
RθJA
Parameter
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
©2013 Fairchild Semiconductor Corporation
FGH40N60SMD_F085 Rev. C1
1
C/W
www.fairchildsemi.com
FGH40N60SMD_F085 600V 40A Field Stop IGBT
December 2013
Device Marking
Device
Package
Packing Type
Qty per Tube
FGH40N60SMD
FGH40N60SMD_F085
TO-247
Tube
30ea
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
-
-
V
-
0.6
-
V/oC
-
-
250
ICES at 80%*BVCES, 175 C
-
-
800
μA
VGE = VGES, VCE = 0V
-
-
±400
nA
IC = 250uA, VCE = VGE
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250uA
ΔBVCES
ΔTJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250uA
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
o
IGES
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
3.5
4.5
6.0
V
IC = 40A, VGE = 15V
-
1.9
2.5
V
IC = 40A, VGE = 15V,
TC = 175oC
-
2.1
-
V
-
1880
2500
pF
VCE = 30V, VGE = 0V,
f = 1MHz
-
180
240
pF
-
50
65
pF
-
18
24
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
-
28
36.4
ns
td(off)
Turn-Off Delay Time
-
110
143
ns
tf
Fall Time
-
13.2
18.5
ns
Eon
Turn-On Switching Loss
-
0.92
1.2
mJ
Eoff
Turn-Off Switching Loss
-
0.3
0.39
mJ
Ets
Total Switching Loss
-
1.22
1.59
mJ
td(on)
Turn-On Delay Time
-
16.7
23.8
ns
tr
Rise Time
-
27
35.1
ns
td(off)
Turn-Off Delay Time
-
116
151
ns
tf
Fall Time
-
56.5
81
ns
Eon
Turn-On Switching Loss
-
1.47
1.91
mJ
Eoff
Turn-Off Switching Loss
-
0.73
0.95
mJ
Ets
Total Switching Loss
-
2.20
2.86
mJ
VCC = 400V, IC = 40A,
RG = 6Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 40A,
RG = 6Ω, VGE = 15V,
Inductive Load, TC = 175oC
Notes:
1:Repetitive rating: Pulse width limited by max junction temperature.
2:Rthjc for TO-247 : according to Mil standard 883-1012 test method. Rthja for TO-247 : according to JESD51-2, test method
environmental condition and JESD51-10, test boards for through hole perimeter leaded package thermal measurements.
JESD51-3 : Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Package.
FGH40N60SMD_F085 Rev. C1
2
www.fairchildsemi.com
FGH40N60SMD_F085 600V 40A Field Stop IGBT
Package Marking and Ordering Information
Symbol
Qg
Parameter
Test Conditions
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCE = 400V, IC = 40A,
VGE = 15V
Electrical Characteristics of the Diode
Symbol
(Continued)
Parameter
VFM
Diode Forward Voltage
Erec
Reverse Recovery Energy
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
FGH40N60SMD_F085 Rev. C1
Min.
Typ.
Max
Units
-
119
180
nC
-
13
20
nC
-
58
90
nC
Units
TC = 25°C unless otherwise noted
Test Conditions
IF = 20A
IF =20A, dIF/dt = 200A/μs
3
Min.
Typ.
Max
TC = 25oC
-
2.3
2.8
TC = 175oC
-
1.67
-
TC = 175oC
-
48.9
-
TC =
25oC
V
uJ
-
36
47
TC = 175oC
-
110
-
TC = 25oC
-
46.8
61
TC = 175oC
-
470
-
ns
nC
www.fairchildsemi.com
FGH40N60SMD_F085 600V 40A Field Stop IGBT
Electrical Characteristics of the IGBT
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
120
120
VGE= 20V
10V
15V
100
Collector Current, IC [A]
Collector Current, IC [A]
80
60
40
8V
80
60
8V
40
20
20
T C = 175oC
TC = 25oC
0
2
4
6
8
Collector-Emitter Voltage, V CE [V]
0
10
Figure 3. Typical Saturation Voltage
Characteristics
100
100
Collector Current, IC [A]
120
80
60
40
Common Emitter
VGE = 15V
T C = 25oC
20
0
2
4
6
8
Collector-Emitter Voltage, V CE [V]
10
Figure 4. Transfer Characteristics
120
Collector Current, IC [A]
10V
15V
100
0
12V
VGE= 20V
12V
Common Emitter
VCE = 20V
o
TC = 25 C
o
TC = 175 C
80
60
40
20
o
T C = 175 C
0
0
0
1
2
3
4
Collector-Emitter Voltage, V CE [V]
5
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
4
6
8
10
Gate-Emitter Voltage,V GE [V]
12
20
Common Emitter
VGE = 15V
Common Emitter
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, VCE [V]
2
Figure 6. Saturation Voltage vs. VGE
3
80A
2
40A
I C = 20A
1
25
50
75
100
125
150
175
o
Collector-EmitterCase Temperature, TC [ C]
FGH40N60SMD_F085 Rev. C1
0
T C = -40oC
16
80A
12
40A
8
IC = 20A
4
0
4
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGH40N60SMD_F085 600V 40A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
o
TC = 25 C
16
80A
12
40A
8
IC = 20A
4
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
Common Emitter
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, V CE [V]
20
o
TC = 175 C
16
80A
12
40A
8
0
20
Figure 9. Capacitance Characteristics
IC =20A
4
4
20
Figure 10. Gate charge Characteristics
15
4000
Gate-Emitter Voltage, V GE [V]
Capacitance [pF]
Cies
1000
Coes
C res
Common Emitter
VGE = 0V, f = 1MHz
100
12
VCC = 200V
9
6
3
Common Emitter
o
TC = 25 C
T C = 25 C
1
400V
300V
o
50
8
12
16
Gate-Emitter Voltage, VGE [V]
10
Collector-Emitter Voltage, V CE [V]
0
30
Figure 11. SOA Characteristics
0
50
Gate Charge, Qg [nC]
100
120
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
300
tr
10μ s
100μs
Switching Time [ns]
Collector Current, Ic [A]
100
10 ms
10
1ms
DC
*Notes:
1
o
1. TC = 25 C
td(on)
10
Common Emitter
VCC = 400V, VGE = 15V
I C = 40A
o
T C = 25 C
2. TJ ≤ 175oC
3. Single Pulse
o
T C = 175 C
1
0.1
1
10
100
Collector-Emitter Voltage, V CE [V]
FGH40N60SMD_F085 Rev. C1
1000
5
0
10
20
30
40
Gate Resistance, RG [Ω]
50
www.fairchildsemi.com
FGH40N60SMD_F085 600V 40A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
100
10000
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
tr
o
Switching Time [ns]
Switching Time [ns]
TC = 25 C
o
1000
TC = 175 C
td(off)
100
tf
td(on)
10
Common Emitter
VGE = 15V, RG = 6Ω
o
TC = 25 C
o
TC = 175 C
10
0
10
20
30
40
Gate Resistance, RG [Ω]
1
20
50
40
60
80
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs.
Gate Resistance
1000
100
Common Emitter
VCC = 400V, VGE = 15V
Switching Loss [mJ]
Switching Time [ns]
I C = 40A
td(off)
100
tf
10
Common Emitter
VGE = 15V, RG = 6Ω
TC = 25oC
10
o
TC = 175 C
Eon
1
Eoff
o
TC = 25 C
o
TC = 175 C
1
20
40
60
0.1
80
0
Figure 17. Switching Loss vs.
Collector Current
20
30
40
50
Figure 18. Turn off Switching
SOA Characteristics
200
10
Common Emitter
VGE = 15V, RG = 6Ω
100
o
Collector Current, IC [A]
Eon
TC = 25 C
Switching Loss [mJ]
10
Gate Resistance, RG [Ω]
Collector Current, IC [A]
TC = 175oC
1
Eoff
10
Safe Operating Area
o
VGE = 15V, TC ≤ 175 C
0.1
20
40
60
1
80
Collector Current, IC [A]
FGH40N60SMD_F085 Rev. C1
1
Collector-Emitter Voltage, VCE [V]
6
www.fairchildsemi.com
FGH40N60SMD_F085 600V 40A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Current Derating
Figure 20. Load Current Vs. Frequency
120
90
Square Wave
110
80
o
TJ < 175 C, D = 0.5, VCE = 400V
VGE = 15/0V, RG = 6W
70
90
Collector Current, IC [A]
Collector Current, I C [A]
100
60
50
40
30
20
80
70
40
30
20
10
0
0
0
1k
25
50
75
100 125 150 175
o
Collector-Emitter Case temperature, T C [ C]
Figure 21. Forward Characteristics
1M
1000
Reverse Current ICES [uA]
Forward Current, IF [A]
10k
100k
Switching Frequency, f [Hz]
Figure 22. Reverse Current
100
o
TC = 175 C
10
o
TC = 25 C
TC = 175oC
100
T C = 100oC
10
1
0.1
TC = 25oC
0.01
0
1
2
Forward Voltage, V F [V]
3
0
Figure 23. Stored Charge
600
TC = 175oC
400
300
di/dt = 200A/ μs
200
600
200
o
TC = 25 C
500
200
400
Collector to Emitter Voltage, VCES [V]
Figure 24. Reverse Recovery Time
Reverse Recovery Time, trr [ns]
Stored Recovery Charge, Qrr [nC]
o
Tc = 100 C
50
10
1
o
Tc = 75 C
60
di/dt = 100A/ μs
100
TC = 25oC
di/dt = 100A/μs
o
TC = 175 C
150
200A/μ s
100
50
di/dt = 100A/ μs
200A/μs
0
0
5
10 15 20 25 30 35
Forwad Current, IF [A]
FGH40N60SMD_F085 Rev. C1
40
0
45
0
5
10
15
20
25
30
35
40
45
Forward Current, IF [A]
7
www.fairchildsemi.com
FGH40N60SMD_F085 600V 40A Field Stop IGBT
Typical Performance Characteristics
FGH40N60SMD_F085 600V 40A Field Stop IGBT
Figure 25. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
0.5
0.5
0.1
0.2
0.1
0.01
0.05
0.02
0.01
PDM
single pulse
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Figure 26.Transient Thermal Impedance of Diode
Thermal Response [Zthjc]
2
1
0.5
0.2
0.1
0.1
0.05
PDM
0.02
t1
0.01
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
0.01
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
FGH40N60SMD_F085 Rev. C1
8
www.fairchildsemi.com
FGH40N60SMD_F085 600V 40A Field Stop IGBT
Mechanical Dimensions
TO - 247AB (FKS PKG CODE 001)
FGH40N60SMD_F085 Rev. C1
9
www.fairchildsemi.com
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Sync-Lock™
F-PFS™
®
AX-CAP®*
FRFET®
®*
®
Global Power ResourceSM
PowerTrench
BitSiC™
GreenBridge™
PowerXS™
Build it Now™
TinyBoost®
Green FPS™
Programmable Active Droop™
CorePLUS™
TinyBuck®
®
Green FPS™ e-Series™
QFET
CorePOWER™
TinyCalc™
QS™
Gmax™
CROSSVOLT™
TinyLogic®
Quiet Series™
GTO™
CTL™
TINYOPTO™
RapidConfigure™
IntelliMAX™
Current Transfer Logic™
TinyPower™
ISOPLANAR™
DEUXPEED®
™
TinyPWM™
Dual Cool™
Marking Small Speakers Sound Louder
TinyWire™
Saving our world, 1mW/W/kW at a time™
EcoSPARK®
and Better™
TranSiC™
EfficentMax™
SignalWise™
MegaBuck™
TriFault Detect™
ESBC™
SmartMax™
MICROCOUPLER™
TRUECURRENT®*
SMART
START™
MicroFET™
®
μSerDes™
Solutions for Your Success™
MicroPak™
SPM®
MicroPak2™
Fairchild®
®
STEALTH™
MillerDrive™
Fairchild Semiconductor
UHC®
SuperFET®
MotionMax™
FACT Quiet Series™
®
Ultra FRFET™
®
SuperSOT™-3
mWSaver
FACT
UniFET™
OptoHiT™
SuperSOT™-6
FAST®
®
VCX™
OPTOLOGIC
SuperSOT™-8
FastvCore™
®
®
VisualMax™
OPTOPLANAR
SupreMOS
FETBench™
VoltagePlus™
SyncFET™
FPS™
XS™
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66