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FDP150N10A N 沟道 PowerTrench® MOSFET 100 V、 50 A、 15 m 特性 说明 • RDS(on) = 12.5 m (Typ.)@VGS = 10 V, ID = 50 A 此 N 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench® 工艺 生产,这一先进工艺是专为最大限度地降低导通电阻并保持卓越 开关性能而定制的。 • 快速开关速度 • 低栅极电荷, QG=16.2 nC (典型值) 应用 • 高性能沟道技术可实现极低的 RDS(on) • 用于 ATX/ 服务器 / 电信 PSU 的同步整流 • 高功率和高电流处理能力 • 电机驱动和不间断电源 • 符合 RoHS 标准 • 微型光伏逆变器 D GD S G TO-220 S 最大绝对额定值 TC =25°C,除非另有说明。 符号 参数 VDSS 漏极-源极电压 VGSS 栅极-源极电压 - 脉冲 单脉冲雪崩能量 dv/dt 二极管恢复 dv/dt 峰值 (TC = 25°C) PD 功耗 TJ, TSTG 工作和存储温度范围 用于焊接的最大引线温度,距离外壳 1/8",持续 5 秒 TL V 36 漏极电流 漏极电流 ±20 - 连续 (TC=100°C) ID IDM 单位 V 50 - 连续 (TC=25°C) EAS FDP150N10A_F102 100 - 降低至 25°C 以上 A (说明 1) 200 A (说明 2) 84.6 mJ (说明 3) 6.0 V/ns 91 W 0.61 W/°C -55 至 +175 °C 300 °C FDP150N10A_F102 单位 热性能 符号 参数 RJC 结至外壳热阻最大值 1.6 RJA 结至环境热阻最大值 62.5 ©2011 飞兆半导体公司 FDP150N10A Rev. C1 1 °C/W www.fairchildsemi.com FDP150N10A — N 沟道 PowerTrench® MOSFET 2014 年 2 月 器件编号 FDP150N10A_F102 顶标 FDP150N10A 封装 TO-220 包装方法 塑料管 卷尺寸 不适用 带宽 不适用 数量 50 个 电气特性 TC =25°C 除非另有说明。 符号 参数 测试条件 最小值 典型值 最大值 单位 100 - - V - 0.08 - V/oC 关断特性 BVDSS BVDSS / TJ 漏极-源极击穿电压 击穿电压温度系数 IDSS 零栅极电压漏极电流 IGSS ID = 250 A, VGS = 0 V ID=250 A,温度参考 25°C VDS = 80 V, VGS = 0 V - - 1 VDS = 80 V, TC = 150°C - - 500 栅极 - 体漏电流 VGS = ±20 V, VDS = 0 V - - ±100 VGS(th) RDS(on) 栅极阈值电压 VGS = VDS, ID = 250 A 2.0 - 4.0 V 漏极至源极静态导通电阻 - 12.5 15.0 m gFS 正向跨导 VGS = 10 V, ID = 50 A VDS = 10 V, ID = 50 A - 40 - S A nA 导通特性 动态特性 Ciss 输入电容 Coss 输出电容 Crss 反向传输电容 Coss(er) 能量相关输出电容 Qg(tot) 10 V 的栅极电荷总量 Qgs 栅极 - 源极栅极电荷 Qgs2 栅极平台电荷阈值 Qgd 栅极 - 漏极 “ 米勒 ” 电荷 ESR 等效串联电阻 (G-S) VDS = 50 V, VGS = 0 V, f = 1 MHz - 1080 1440 pF - 267 355 pF - 11 - pF VDS = 50 V, VGS = 0 V - 436 - pF - 16.2 21.0 nC VDS = 50 V , VGS = 10 V, ID = 50 A (说明 4) f = 1 MHz - 5.3 - nC - 2.6 - nC - 3.7 - nC - 1.3 - - 13 36 ns - 16 42 ns - 21 52 ns - 5 20 ns 开关特性 td(on) tr 导通延迟时间 开通上升时间 td(off) 关断延迟时间 tf 关断下降时间 VDD = 50 V, ID = 50 A, VGS = 10 V, RG = 4.7 ( 说明 4) 漏极 - 源极二极管特性 IS 漏极 - 源极二极管最大正向连续电流 - - 50 A ISM 漏极 - 源极二极管最大正向脉冲电流 - - 200 A VSD 漏极 - 源极二极管正向电压 VGS = 0 V, ISD = 50 A - - 1.3 V trr 反向恢复时间 - 50 - ns Qrr 反向恢复电荷 VGS = 0 V, VDD = 50 V, ISD = 50 A, dIF/dt = 100 A/s - 55 - nC 注意: 1. 重复额定值:脉冲宽度受限于最大结温。 2. L=2 mH, IAS=9.2 A, RG=25 ,开始 TJ=25°C。 3. ISD 100 A, di/dt 200 A/s, VDD BVDSS,开始 TJ=25°C。 4. 本质上独立于工作温度的典型特性。 ©2011 飞兆半导体公司 FDP150N10A 修订版 C1 2 www.fairchildsemi.com FDP150N10A — N 沟道 PowerTrench® MOSFET 封装标识与定购信息 图 1. 导通区域特性 图 2. 传输特性 200 VGS = 15.0V 10.0V 8.0V 6.5V 6.0V 5.5V 5.0V 100 10 *Notes: 1. VDS = 10V 2. 250s Pulse Test 100 ID, Drain Current[A] ID, Drain Current[A] 400 o 175 C o 25 C o -55 C 10 *Notes: 1. 250s Pulse Test o 2. TC = 25 C 4 0.1 1 VDS, Drain-Source Voltage[V] 1 7 图 3. 导通电阻变化与漏极电流和栅极电压的关系 3 4 5 6 VGS, Gate-Source Voltage[V] IS, Reverse Drain Current [A] 400 30 20 VGS = 10V 10 VGS = 20V 100 o 175 C o 25 C 10 *Notes: 1. VGS = 0V o 0 *Note: TC = 25 C 0 50 100 150 ID, Drain Current [A] 1 0.0 200 图 5. 电容特性 1.5 10 VGS, Gate-Source Voltage [V] Ciss 1000 Capacitances [pF] 2. 250s Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] 图 6. 栅极电荷特性 3000 Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz 10 7 图 4. 体二极管正向电压变化与源极电流和温度的关系 40 RDS(ON) [m], Drain-Source On-Resistance 2 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 5 0.1 ©2011 飞兆半导体公司 FDP150N10A 修订版 C1 1 10 VDS, Drain-Source Voltage [V] Crss 8 6 4 2 0 100 3 VDS = 20V VDS = 50V VDS = 80V *Note: ID = 50A 0 5 10 15 Qg, Total Gate Charge [nC] 20 www.fairchildsemi.com FDP150N10A — N 沟道 PowerTrench® MOSFET 典型性能特征 图 7. 击穿电压变化与温度的关系 图 8. 导通电阻变化与温度的关系 2.5 1.08 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.04 1.00 0.96 *Notes: 1. VGS = 0V 2. ID = 250A 0.92 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.0 *Notes: 1. VGS = 10V 2. ID = 50A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 图 10. 最大漏极电流与壳温的关系 300 60 100 VGS = 10V 10s 50 100s ID, Drain Current [A] ID, Drain Current [A] 1.5 0.5 -100 200 图 9. 最大安全工作区 10 1ms Operation in This Area is Limited by R DS(on) 1 10ms DC *Notes: 0.1 o 1. TC = 25 C 0.01 0.1 2. TJ = 175 C 3. Single Pulse 1 10 VDS, Drain-Source Voltage [V] 30 20 o RJC = 1.6 C/W 0 25 100 200 图 11. Eoss 与漏源极电压的关系 IAS, AVALANCHE CURRENT (A) 20 1.2 0.9 0.6 0.3 0 ©2011 飞兆半导体公司 FDP150N10A 修订版 C1 25 50 75 VDS, Drain to Source Voltage [V] 50 75 100 125 150 o TC, Case Temperature [ C] 175 图 12. 非箝位感性开关特性 1.5 0.0 40 10 o EOSS, [J] 2.0 10 o STARTING TJ = 25 C o STARTING TJ = 150 C 1 0.01 100 4 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD) If R = 0 tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1] 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) 1000 www.fairchildsemi.com FDP150N10A — N 沟道 PowerTrench® MOSFET 典型性能特性 (接上页) FDP150N10A — N 沟道 PowerTrench® MOSFET 典型性能特性 (接上页) 图 13. 瞬态热响应曲线 ZJC(t),热响应 [oC/W] Thermal Response [ZJC] 2 1 0.5 0.2 0.1 0.1 t1 0.02 t2 *Notes: 0.01 o 1. ZJC(t) = 1.6 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) Single pulse 0.01 -5 10 ©2011 飞兆半导体公司 FDP150N10A 修订版 C1 PDM 0.05 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] t1,矩形脉冲持续时间 [秒] 5 -1 10 1 www.fairchildsemi.com FDP150N10A — N 沟道 PowerTrench® MOSFET IG= 常量 图 14. 栅极电荷测试电路与波形 VDS RG V 10V GS RL VDS 90% VDD VGS VGS DUT 10% td(on) tr t on td(off) tf t off 图 15. 阻性开关测试电路与波形 VGS 图 16. 非箝位电感开关测试电路与波形 ©2011 飞兆半导体公司 FDP150N10A 修订版 C1 6 www.fairchildsemi.com FDP150N10A — N 沟道 PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 图 17. 二极管恢复 dv/dt 峰值测试电路与波形 ©2011 飞兆半导体公司 FDP150N10A 修订版 C1 7 www.fairchildsemi.com FDP150N10A — N 沟道 PowerTrench® MOSFET 机械尺寸 图 18. TO-220 模塑 3 引线 Jedec 变体 AB (Delta) 封装图纸作为一项服务,提供给考虑飞兆半导体元件的客户。具体参数可能会有变化,且不会做出相应通知。请注意图纸上的版本和 / 或日期,并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件,尤其是其中涉及飞兆公司 产品保修的部分。 随时访问飞兆半导体在线封装网页,可以获取最新的封装图纸: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0I3 ©2011 飞兆半导体公司 FDP150N10A 修订版 C1 8 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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