Download FDP150N10A N MOSFET 

FDP150N10A
N 沟道 PowerTrench® MOSFET
100 V、 50 A、 15 m
特性
说明
• RDS(on) = 12.5 m (Typ.)@VGS = 10 V, ID = 50 A
此 N 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench® 工艺
生产，这一先进工艺是专为最大限度地降低导通电阻并保持卓越
开关性能而定制的。
• 快速开关速度
• 低栅极电荷， QG=16.2 nC （典型值）
应用
• 高性能沟道技术可实现极低的 RDS(on)
• 用于 ATX/ 服务器 / 电信 PSU 的同步整流
• 高功率和高电流处理能力
• 电机驱动和不间断电源
• 符合 RoHS 标准
• 微型光伏逆变器
D
GD
S
G
TO-220
S
最大绝对额定值
TC =25°C，除非另有说明。
符号
参数
VDSS
漏极－源极电压
VGSS
栅极－源极电压
- 脉冲
单脉冲雪崩能量
dv/dt
二极管恢复 dv/dt 峰值
(TC = 25°C)
PD
功耗
TJ, TSTG
工作和存储温度范围
用于焊接的最大引线温度，距离外壳 1/8"，持续 5 秒
TL
V
36
漏极电流
漏极电流
±20
- 连续 (TC=100°C)
ID
IDM
单位
V
50
- 连续 (TC=25°C)
EAS
FDP150N10A_F102
100
- 降低至 25°C 以上
A
（说明 1）
200
A
（说明 2）
84.6
mJ
（说明 3）
6.0
V/ns
91
W
0.61
W/°C
-55 至 +175
°C
300
°C
FDP150N10A_F102
单位
热性能
符号
参数
RJC
结至外壳热阻最大值
1.6
RJA
结至环境热阻最大值
62.5
©2011 飞兆半导体公司
FDP150N10A Rev. C1
1
°C/W
www.fairchildsemi.com
FDP150N10A — N 沟道 PowerTrench® MOSFET
2014 年 2 月
器件编号
FDP150N10A_F102
顶标
FDP150N10A
封装
TO-220
包装方法
塑料管
卷尺寸
不适用
带宽
不适用
数量
50 个
电气特性 TC =25°C 除非另有说明。
符号
参数
测试条件
最小值
典型值
最大值
单位
100
-
-
V
-
0.08
-
V/oC
关断特性
BVDSS
BVDSS
/ TJ
漏极－源极击穿电压
击穿电压温度系数
IDSS
零栅极电压漏极电流
IGSS
ID = 250 A, VGS = 0 V
ID=250 A，温度参考 25°C
VDS = 80 V, VGS = 0 V
-
-
1
VDS = 80 V, TC = 150°C
-
-
500
栅极 - 体漏电流
VGS = ±20 V, VDS = 0 V
-
-
±100
VGS(th)
RDS(on)
栅极阈值电压
VGS = VDS, ID = 250 A
2.0
-
4.0
V
漏极至源极静态导通电阻
-
12.5
15.0
m
gFS
正向跨导
VGS = 10 V, ID = 50 A
VDS = 10 V, ID = 50 A
-
40
-
S
A
nA
导通特性
动态特性
Ciss
输入电容
Coss
输出电容
Crss
反向传输电容
Coss(er)
能量相关输出电容
Qg(tot)
10 V 的栅极电荷总量
Qgs
栅极 - 源极栅极电荷
Qgs2
栅极平台电荷阈值
Qgd
栅极 - 漏极 “ 米勒 ” 电荷
ESR
等效串联电阻 (G-S)
VDS = 50 V, VGS = 0 V,
f = 1 MHz
-
1080
1440
pF
-
267
355
pF
-
11
-
pF
VDS = 50 V, VGS = 0 V
-
436
-
pF
-
16.2
21.0
nC
VDS = 50 V , VGS = 10 V,
ID = 50 A
（说明 4）
f = 1 MHz
-
5.3
-
nC
-
2.6
-
nC
-
3.7
-
nC
-
1.3
-

-
13
36
ns
-
16
42
ns
-
21
52
ns
-
5
20
ns
开关特性
td(on)
tr
导通延迟时间
开通上升时间
td(off)
关断延迟时间
tf
关断下降时间
VDD = 50 V, ID = 50 A,
VGS = 10 V, RG = 4.7 
( 说明 4)
漏极 - 源极二极管特性
IS
漏极 - 源极二极管最大正向连续电流
-
-
50
A
ISM
漏极 - 源极二极管最大正向脉冲电流
-
-
200
A
VSD
漏极 - 源极二极管正向电压
VGS = 0 V, ISD = 50 A
-
-
1.3
V
trr
反向恢复时间
-
50
-
ns
Qrr
反向恢复电荷
VGS = 0 V, VDD = 50 V, ISD = 50 A,
dIF/dt = 100 A/s
-
55
-
nC
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. L=2 mH， IAS=9.2 A， RG=25 ，开始 TJ=25°C。
3. ISD 100 A， di/dt  200 A/s， VDD  BVDSS，开始 TJ=25°C。
4. 本质上独立于工作温度的典型特性。
©2011 飞兆半导体公司
FDP150N10A 修订版 C1
2
www.fairchildsemi.com
FDP150N10A — N 沟道 PowerTrench® MOSFET
封装标识与定购信息
图 1. 导通区域特性
图 2. 传输特性
200
VGS = 15.0V
10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
100
10
*Notes:
1. VDS = 10V
2. 250s Pulse Test
100
ID, Drain Current[A]
ID, Drain Current[A]
400
o
175 C
o
25 C
o
-55 C
10
*Notes:
1. 250s Pulse Test
o
2. TC = 25 C
4
0.1
1
VDS, Drain-Source Voltage[V]
1
7
图 3. 导通电阻变化与漏极电流和栅极电压的关系
3
4
5
6
VGS, Gate-Source Voltage[V]
IS, Reverse Drain Current [A]
400
30
20
VGS = 10V
10
VGS = 20V
100
o
175 C
o
25 C
10
*Notes:
1. VGS = 0V
o
0
*Note: TC = 25 C
0
50
100
150
ID, Drain Current [A]
1
0.0
200
图 5. 电容特性
1.5
10
VGS, Gate-Source Voltage [V]
Ciss
1000
Capacitances [pF]
2. 250s Pulse Test
0.5
1.0
VSD, Body Diode Forward Voltage [V]
图 6. 栅极电荷特性
3000
Coss
100
*Note:
1. VGS = 0V
2. f = 1MHz
10
7
图 4. 体二极管正向电压变化与源极电流和温度的关系
40
RDS(ON) [m],
Drain-Source On-Resistance
2
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
5
0.1
©2011 飞兆半导体公司
FDP150N10A 修订版 C1
1
10
VDS, Drain-Source Voltage [V]
Crss
8
6
4
2
0
100
3
VDS = 20V
VDS = 50V
VDS = 80V
*Note: ID = 50A
0
5
10
15
Qg, Total Gate Charge [nC]
20
www.fairchildsemi.com
FDP150N10A — N 沟道 PowerTrench® MOSFET
典型性能特征
图 7. 击穿电压变化与温度的关系
图 8. 导通电阻变化与温度的关系
2.5
1.08
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.10
1.04
1.00
0.96
*Notes:
1. VGS = 0V
2. ID = 250A
0.92
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
1.0
*Notes:
1. VGS = 10V
2. ID = 50A
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
图 10. 最大漏极电流与壳温的关系
300
60
100
VGS = 10V
10s
50
100s
ID, Drain Current [A]
ID, Drain Current [A]
1.5
0.5
-100
200
图 9. 最大安全工作区
10
1ms
Operation in This Area
is Limited by R DS(on)
1
10ms
DC
*Notes:
0.1
o
1. TC = 25 C
0.01
0.1
2. TJ = 175 C
3. Single Pulse
1
10
VDS, Drain-Source Voltage [V]
30
20
o
RJC = 1.6 C/W
0
25
100 200
图 11. Eoss 与漏源极电压的关系
IAS, AVALANCHE CURRENT (A)
20
1.2
0.9
0.6
0.3
0
©2011 飞兆半导体公司
FDP150N10A 修订版 C1
25
50
75
VDS, Drain to Source Voltage [V]
50
75
100
125
150
o
TC, Case Temperature [ C]
175
图 12. 非箝位感性开关特性
1.5
0.0
40
10
o
EOSS, [J]
2.0
10
o
STARTING TJ = 25 C
o
STARTING TJ = 150 C
1
0.01
100
4
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
1000
www.fairchildsemi.com
FDP150N10A — N 沟道 PowerTrench® MOSFET
典型性能特性 （接上页）
FDP150N10A — N 沟道 PowerTrench® MOSFET
典型性能特性 （接上页）
图 13. 瞬态热响应曲线
ZJC(t)，热响应 [oC/W]
Thermal Response [ZJC]
2
1
0.5
0.2
0.1
0.1
t1
0.02
t2
*Notes:
0.01
o
1. ZJC(t) = 1.6 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.01
-5
10
©2011 飞兆半导体公司
FDP150N10A 修订版 C1
PDM
0.05
-4
10
-3
-2
10
10
Rectangular
Pulse Duration
[sec]
t1，矩形脉冲持续时间
[秒]
5
-1
10
1
www.fairchildsemi.com
FDP150N10A — N 沟道 PowerTrench® MOSFET
IG= 常量
图 14. 栅极电荷测试电路与波形
VDS
RG
V
10V
GS
RL
VDS
90%
VDD
VGS
VGS
DUT
10%
td(on)
tr
t on
td(off)
tf
t off
图 15. 阻性开关测试电路与波形
VGS
图 16. 非箝位电感开关测试电路与波形
©2011 飞兆半导体公司
FDP150N10A 修订版 C1
6
www.fairchildsemi.com
FDP150N10A — N 沟道 PowerTrench® MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
图 17. 二极管恢复 dv/dt 峰值测试电路与波形
©2011 飞兆半导体公司
FDP150N10A 修订版 C1
7
www.fairchildsemi.com
FDP150N10A — N 沟道 PowerTrench® MOSFET
机械尺寸
图 18. TO-220 模塑 3 引线 Jedec 变体 AB (Delta)
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0I3
©2011 飞兆半导体公司
FDP150N10A 修订版 C1
8
www.fairchildsemi.com
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