Download ES1A - ES1D

ES1A - ES1D
ES1A - ES1D
Features
•
For surface mount applications.
•
Glass passivated junction.
•
Low profile package.
•
Easy pick and place.
•
Built-in strain relief.
•
Superfast recovery times for
high efficiency.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Fast Rectifiers
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Value
Parameter
1A
50
1B
100
1C
150
1.0
1D
200
Units
VRRM
IF(AV)
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current, @ TA=120°C
IFSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
30
A
-50 to +150
°C
Operating Junction Temperature
-50 to +150
°C
Tstg
TJ
V
A
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Power Dissipation
1.47
W
RθJA
Thermal Resistance, Junction to Ambient*
85
°C/W
RθJL
Thermal Resistance, Junction to Lead*
35
°C/W
*Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Device
Parameter
1A
VF
Forward Voltage @ 1.0 A
trr
Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
Reverse Current @ rated VR
IR
CT
Total Capacitance
VR = 4.0 V, f = 1.0 MHz
2010 Fairchild Semiconductor Corporation
TA = 25°C
TA = 100°C
1B
1C
Units
1D
0.92
V
15
ns
5.0
100
µA
µA
pF
7.0
ES1A-ES1D, Rev. C1
ES1A - ES1D
10
1.5
1.25
Forward Current, IF [A]
Average Rectified Forward Current, IF [A]
Typical Characteristics
1
0.75
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 0.2 x 0.2"
(5.0 x 5.0 mm)
COPPER PAD AREAS
0.5
0.25
0
0
25
50
75
100
125
Ambient Temperature [ºC]
150
0.01
TA = 25º C
Pulse Width = 300µ
µs
2% Duty Cycle
0.6
0.8
1
1.2
Forward Voltage, VF [V]
1.4
Figure 2. Forward Voltage Characteristics
1000
30
25
Reverse Current, IR [uA]
Peak Forward Surge Current, IFSM [A]
0.1
0.001
0.4
175
Figure 1. Forward Current Derating Curve
1
20
15
10
5
0
1
2
5
10
20
Number of Cycles at 60Hz
50
100
Figure 3. Non-Repetitive Surge Current
100
T A = 125 º C
10
TA = 75º C
1
T A = 25º C
0.1
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage [%]
Figure 4. Reverse Current vs Reverse Voltage
Total Capacitance, C T [pF]
14
12
10
8
6
4
2
0
0.1
1
10
Reverse Voltage, V R [V]
100
Figure 5. Total Capacitance
50Ω
NONINDUCTIVE
50Ω
NONINDUCTIVE
+0.5A
trr
(-)
DUT
50V
(approx)
50Ω
NONINDUCTIVE
Pulse
Generator
(Note 2)
0
-0.25A
(+)
OSCILLOSCOPE
(Note 1)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
2010 Fairchild Semiconductor Corporation
ES1A-ES1D, Rev. C1
ES1A - ES1D
Package Dimensions
SMA / DO - 214AC
Dimensions in Millimeters
ES1A-ES1D, Rev. C1
2010 Fairchild Semiconductor Corporation
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with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4