Download SPP07N60S5 SPI07N60S5 Cool MOS™ Power Transistor

SPP07N60S5
SPI07N60S5
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
VDS
600
V
RDS(on)
0.6
Ω
ID
7.3
A
PG-TO262
• Ultra low gate charge
PG-TO220
• Periodic avalanche rated
2
• Extreme dv/dt rated
1
• Ultra low effective capacitances
23
BDTIC
P-TO220-3-1
• Improved transconductance
Type
Package
Ordering Code
Marking
SPP07N60S5
PG-TO220
Q67040-S4172
07N60S5
SPI07N60S5
PG-TO262
Q67040-S4328
07N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TC = 25 °C
7.3
TC = 100 °C
4.6
Pulsed drain current, tp limited by Tjmax
I D puls
14.6
Avalanche energy, single pulse
EAS
230
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
0.5
mJ
I D = - A, V DD = 50 V
I D = 7.3 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR
Gate source voltage
VGS
7.3
A
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, T C = 25°C
Ptot
83
W
Operating and storage temperature
T j , T stg
-55... +150
°C
Rev. 2.7
Page 1
www.BDTIC.com/infineon
2009-11-27
SPP07N60S5
SPI07N60S5
Maximum Ratings
Parameter
Symbol
Drain Source voltage slope
dv/dt
Value
Unit
20
V/ns
Values
Unit
V DS = 480 V, ID = 7.3 A, Tj = 125 °C
Thermal Characteristics
Symbol
Parameter
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
1.5
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
62
@ 6 cm2 cooling area 2)
-
35
-
-
-
260
K/W
BDTIC
Soldering temperature, wavesoldering
Tsold
°C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA
Drain-Source avalanche
V(BR)DS V GS=0V, ID=7.3A
Values
Unit
min.
typ.
max.
600
-
-
-
700
-
3.5
4.5
5.5
V
breakdown voltage
Gate threshold voltage
VGS(th)
ID=350µΑ, VGS=V DS
Zero gate voltage drain current
I DSS
V DS=600V, VGS=0V,
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
Gate input resistance
Rev. 2.7
RG
µA
Tj=25°C,
-
0.5
1
Tj=150°C
-
-
100
V GS=20V, VDS=0V
-
-
100
Ω
V GS=10V, ID=4.6A,
Tj=25°C
-
0.54
0.6
Tj=150°C
-
1.46
-
f=1MHz, open Drain
-
19
-
Page 2
nA
www.BDTIC.com/infineon
2009-11-27
SPP07N60S5
SPI07N60S5
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
-
4
-
S
pF
Characteristics
Transconductance
g fs
V DS≥2*I D*RDS(on)max,
ID=4.6A
Input capacitance
Ciss
V GS=0V, V DS=25V,
-
970
-
Output capacitance
Coss
f=1MHz
-
370
-
BDTIC
Reverse transfer capacitance
Crss
Effective output capacitance,3) Co(er)
energy related
V GS=0V,
-
10
-
-
30
-
-
55
-
V DS=0V to 480V
Effective output capacitance,4) Co(tr)
time related
Turn-on delay time
t d(on)
V DD=350V, V GS=0/10V,
-
120
-
Rise time
tr
ID=7.3A, RG=12Ω
-
40
-
Turn-off delay time
t d(off)
-
170
255
Fall time
tf
-
20
30
-
7.5
-
-
16.5
-
-
27
35
-
8
-
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
pF
VDD=350V, ID=7.3A
VDD=350V, ID=7.3A,
ns
nC
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=350V, ID=7.3A
V
1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3C
is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V
o(er)
DSS.
4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Rev. 2.7
Page 3
www.BDTIC.com/infineon
2009-11-27
SPP07N60S5
SPI07N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Parameter
Inverse diode continuous
IS
Conditions
TC=25°C
Values
Unit
min.
typ.
max.
-
-
7.3
-
-
14.6
1
1.2
A
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
V
Reverse recovery time
trr
VR=350V, IF =IS ,
-
750
1275
ns
Reverse recovery charge
Qrr
di F/dt=100A/µs
-
4.9
-
µC
BDTIC
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
typ.
Unit
typ.
Thermal resistance
Thermal capacitance
R th1
0.024
R th2
Cth1
0.00012
0.046
Cth2
0.0004578
R th3
0.085
Cth3
0.000645
R th4
0.308
Cth4
0.001867
R th5
0.317
Cth5
0.004795
R th6
0.112
Cth6
0.045
Tj
K/W
R th1
R th,n
T case
Ws/K
E xternal H eatsink
P tot (t)
C th1
C th2
C th,n
T am b
Rev. 2.7
Page 4
www.BDTIC.com/infineon
2009-11-27
SPP07N60S5
SPI07N60S5
1 Power dissipation
2 Safe operating area
Ptot = f (TC)
ID = f ( V DS )
parameter : D = 0 , T C=25°C
100
10 2
SPP07N60S5
W
A
80
10 1
ID
Ptot
70
BDTIC
60
10 0
50
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
40
30
10 -1
20
10
0
0
20
40
60
80
100
°C
120
10 -2 0
10
160
10
1
10
2
10
V
VDS
TC
3 Typ. output characteristic
4 Typ. output characteristic
ID = f (VDS); Tj=25°C
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
parameter: tp = 10 µs, VGS
25
12
20V
20V
12V
10V
A
A
9V
15
ID
ID
12V
10V
8.5V
8
8V
6
9V
10
7.5V
4
7V
8V
5
6.5V
2
6V
7V
0
0
5
10
15
V
25
0
0
5
10
VDS
Rev. 2.7
15
V
25
VDS
Page 5
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2009-11-27
3
SPP07N60S5
SPI07N60S5
5 Typ. drain-source on resistance
6 Drain-source on-state resistance
RDS(on)=f(ID)
RDS(on) = f (Tj)
parameter: Tj=150°C, VGS
parameter : ID = 4.6 A, VGS = 10 V
3
3.4
SPP07N60S5
Ω
2.8
RDS(on)
RDS(on)
mΩ
2.4
BDTIC
2
1.6
20V
12V
10V
9V
8.5V
8V
7.5V
7V
6.5V
6V
1.5
1
0
2
2
4
6
8
A
10
1.2
98%
0.8
typ
0.4
0
-60
14
-20
20
60
°C
100
ID
180
Tj
7 Typ. transfer characteristics
8 Typ. gate charge
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
VGS = f (Q Gate)
parameter: ID = 7.3 A pulsed
parameter: tp = 10 µs
24
16
SPP07N60S5
A
20
0.2 VDS max
18
12 0.8 VDS max
16
14
VGS
ID
V
25 °C
150 °C
12
10
8
10
6
8
6
4
4
2
2
0
0
4
8
12
V
0
0
20
4
8
12
16
20
28
32 nC 38
Q Gate
VGS
Rev. 2.7
24
Page 6
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20079-11-27
SPP07N60S5
SPI07N60S5
9 Forward characteristics of body diode
10 Avalanche SOA
IF = f (VSD)
IAR = f (tAR)
parameter: Tj , tp = 10 µs
par.: Tj ≤ 150 °C
2 SPP07N60S5
10
8
A
A
6
IAR
10
1
5
IF
BDTIC
T j(START) =25°C
4
3
10 0
T j(START) =125°C
Tj = 25 °C typ
2
Tj = 150 °C typ
Tj = 25 °C (98%)
1
Tj = 150 °C (98%)
10 -1
0
0.4
0.8
1.2
1.6
2
2.4 V
0 -3
10
3
10
-2
10
-1
10
0
10
1
10
2
4
µs 10
tAR
VSD
11 Avalanche energy
12 Drain-source breakdown voltage
EAS = f (Tj)
V(BR)DSS = f (Tj)
par.: ID = - A, VDD = 50 V
260
720
mJ
SPP07N60S5
V
220
V(BR)DSS
EAS
200
180
160
680
660
640
140
120
620
100
600
80
60
580
40
560
20
0
20
40
60
80
100
120
°C
160
540
-60
-20
20
60
Tj
Rev. 2.7
100
°C
180
Tj
Page 7
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2009-11-27
SPP07N60S5
SPI07N60S5
13 Avalanche power losses
14 Typ. capacitances
PAR = f (f )
C = f (VDS)
parameter: E AR=0.5mJ
parameter: V GS=0V, f=1 MHz
10 4
300
pF
W
Ciss
PAR
10 3
200
C
BDTIC
10 2
150
Coss
100
10 1
Crss
50
0 4
10
10
5
MHz
10
10 0
0
6
100
200
300
400
V
600
VDS
f
15 Typ. Coss stored energy
16 Typ. gate threshold voltage
Eoss=f(VDS)
VGS(th) = f (Tj)
parameter: V GS = VDS
5.5
µJ
4.5
Eoss
4
3.5
3
2.5
2
1.5
1
0.5
0
0
100
200
300
400
V
600
VDS
Rev. 2.7
Page 8
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2009-11-27
SPP07N60S5
SPI07N60S5
Definition of diodes switching characteristics
BDTIC
Rev. 2.7
Page 9
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2009-11-27
SPP07N60S5
SPI07N60S5
PG-TO220-3-1, PG-TO220-3-21
BDTIC
Rev. 2.7
Page 10
www.BDTIC.com/infineon
2009-11-27
SPP07N60S5
SPI07N60S5
PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)
BDTIC
Rev. 2.7
Page 11
www.BDTIC.com/infineon
2009-11-27
SPP07N60S5
SPI07N60S5
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
BDTIC
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.7
Page 12
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2009-11-27