Download NS RF2192

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project

Document related concepts

Ground (electricity) wikipedia , lookup

Power factor wikipedia , lookup

Standby power wikipedia , lookup

Wireless power transfer wikipedia , lookup

Utility frequency wikipedia , lookup

Islanding wikipedia , lookup

History of electric power transmission wikipedia , lookup

Variable-frequency drive wikipedia , lookup

Solar micro-inverter wikipedia , lookup

Electrification wikipedia , lookup

Electric power system wikipedia , lookup

Resistive opto-isolator wikipedia , lookup

Rectifier wikipedia , lookup

Decibel wikipedia , lookup

Power inverter wikipedia , lookup

Power over Ethernet wikipedia , lookup

Power engineering wikipedia , lookup

Voltage optimisation wikipedia , lookup

Pulse-width modulation wikipedia , lookup

Alternating current wikipedia , lookup

Amtrak's 25 Hz traction power system wikipedia , lookup

Metadyne wikipedia , lookup

Opto-isolator wikipedia , lookup

Buck converter wikipedia , lookup

Power electronics wikipedia , lookup

Audio power wikipedia , lookup

Mains electricity wikipedia , lookup

Power supply wikipedia , lookup

AC adapter wikipedia , lookup

Switched-mode power supply wikipedia , lookup

Transcript
RF2192
RF21923V
900MHz Linear Power
Amplifier
3V 900MHz LINEAR POWER AMPLIFIER
RoHS Compliant & Pb-Free Product
Package Style: QFN, 16-Pin, 4mmx4mm

45 mA idle current

47% Peak Efficiency 31dBm Output
Applications




3V JCDMA Cellular Handsets
3V CDMA2000 Cellular Handsets
3V TDMA/GAIT Cellular Handsets
3V CDMA 450MHz Band Handsets
Portable Battery-Powered Equipment
NO
T
FO
R

3V CDMA/AMPS Cellular Handsets
VCC BIAS
2FO
2
12
RF OUT
GND
3
11
RF OUT
RF IN
4
10
RF OUT
5
6
7
8
9
Functional Block Diagram
Product Description
The RF2192 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the
final RF amplifier in dual-mode 3V CDMA/AMPS and CDMA2000 handheld digital
cellular equipment, spread-spectrum systems, and other applications in the
800MHz to 960MHz band. The RF2192 has a low power mode to extend battery
life under low output power conditions. The device is packaged in a 16-pin,
4mmx4mm QFN.
NE
W

GND
GND
Low Power Mode
13
VREG1

14
S
37% Linear Efficiency
15
DE
SI
GN

16
BIAS GND
29dBm Linear Output Power
VCC1

1
VREG2
Single 3V Supply
VMODE

VCC1
Features
GND
NOT FOR NEW DESIGNS
Ordering Information
RF2192
RF2192PCBA-41X
GaAs HBT
GaAs MESFET
InGaP HBT
3V 900MHz Linear Power Amplifier
Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS110304
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
1 of 12
RF2192
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (RF off)
+8.0
VDC
Supply Voltage (POUT 31dBm)
+5.2
VDC
Mode Voltage (VMODE)
+4.2
VDC
Control Voltage (VREG)
+3.0
VDC
Input RF Power
+10
dBm
Operating Case Temperature
-30 to +110
°C
Storage Temperature
-40 to +150
°C
Parameter
Min.
Usable Frequency Range
Specification
Typ.
400
Max.
960
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Unit
MHz
Case T=25°C, VCC =3.4V, VREG = 2.85V,
VMODE =0V to 0.5V, Freq=824MHz to 849MHz
(unless otherwise specified)
Frequency Range
824
Linear Gain
27
Second Harmonic
Third Harmonic
DE
SI
GN
S
High Power StateUS-CDMA (VMODE Low)
849
29
Total Linear Efficiency
30
dB
dBc
dBc
dBm
37
Adjacent Channel Power Rejection
%
POUT =29dBm
-48
-44
dBc
ACPR@885kHz
-58
-56
dBc
ACPR@1980kHz
2:1
Output VSWR
Noise Power
NE
W
Input VSWR
MHz
-33
<-60
Maximum Linear Output Power
(CDMA Modulation)
10:1
No damage.
6:1
No oscillations. >-70dBc
-133
Low Power StateUS-CDMA (VMODE High)
824
Linear Gain
19
FO
R
Frequency Range
Second Harmonic
Third Harmonic
Maximum Linear Output Power
(CDMA Modulation)
16
NO
T
Max ICC
Adjacent Channel Power Rejection
Input VSWR
Output VSWR
2 of 12
Chondition
dBm/Hz
At 45MHz offset
Case T=25°C, VCC =3.4V, VREG =2.85V,
VMODE =1.8V to 3V, Freq=824MHz to 849MHz
(unless otherwise specified)
849
22
MHz
dB
-33
dBc
<-60
dBc
20
dBm
150
mA
POUT =+16dBm (all currents included)
-48
-46
dBc
ACPR@885kHz
<-60
-58
dBc
ACPR@1980kHz
2:1
10:1
No damage.
6:1
No oscillations. >-70dBc
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
DS110304
RF2192
Parameter
Min.
Specification
Typ.
Max.
Unit
Case T=25oC, VCC =3.4V, VREG =2.85V.
VMODE =0V to 0.5V, Freq=824MHz to 849MHz
(unless otherwise specified)
High Power State CDMA 2000
1x (VMODE LOW)
Frequency Range
Condition
824
Linear Gain
849
29
MHz
dB
Pilot+DCCH 9600
Maximum Linear Output Power
(CDMA 2000 Modulation)
26.5
Adjacent Channel Power Rejection
dBm
2.5dB Backoff included in IS98D CCDF 1%
5.4dB Peak Average Ratio at CCDF 1%
-47
dBc
ACPR@885kHz
<-60
dBc
[email protected]
dBm
4.5dB Peak Average Ratio at CCDF 1%
Pilot+FCH 9600+SCHO 9600
29
Adjacent Channel Power Rejection
Low Power State CDMA 2000
1x (VMODE HIGH)
Pilot+DCCH 9600
Maximum Linear Output Power
(CDMA 2000 Modulation)
16
Adjacent Channel Power Rejection
Efficiency
Pilot+FCH 9600+SCHO 9600
Second Harmonic
Third Harmonic
20
dBm
31
5.4dB Peak to Average Ratio at CCDF 1%
-48
dBc
ACPR@885kHz
<-85
dBc
[email protected]
15
%
20
dBm
<-50
dBc
ACPR@885kHz
<-65
dBc
[email protected]
849
4.5dB Peak to Average Ratio at CCDF 1%
MHz
30
dB
-33
dBc
<-60
dBc
32
dBm
47
%
Input VSWR
2:1
Output VSWR
POUT =20dBm
Case T=25°C, VCC =3.4V, VREG =2.85V,
VMODE =0V to 0.5V, Freq=824MHz to 849MHz
(unless otherwise specified)
Total Efficiency (AMPS mode)
NO
T
Max CW Output Power
MHz
dB
824
FO
R
Gain
849
22
NE
W
16
Adjacent Channel Power Rejection
Frequency Range
ACPR@885kHz
[email protected]
DE
SI
GN
824
Linear Gain
FM Mode
dBc
dBc
Case T=25oC, VCC =3.4V, VREG =2.85V.
VMODE =1.8V to 3V, Freq=824MHz to 849MHz
Frequency Range
Maximum Linear Output Power
(CDMA 2000 Modulation)
-47
<-60
S
Maximum Linear Output Power
(CDMA 2000 Modulation)
POUT =31dBm (room temperature)
10:1
No damage.
6:1
No oscillations. >-70dBc
Note: DCCH: Dedicated Control Channel
FCH: Fundamental Channel
CCDF: Complementary Cumulative Distribution Function
DS110304
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
3 of 12
RF2192
Parameter
Min.
Specification
Typ.
Max.
Unit
Case T=25oC, VCC =3.4V, VREG =2.85V,
VMODE =0V to 0.5V, Freq=452MHz to 458MHz
(unless otherwise specified)
High Power State-CDMA450
(VMODE Low)
Frequency Range
452
458
MHz
Linear Gain
31
dB
Second Harmonic
30
dBc
Third Harmonic
-60
Maximum Linear Output Power
(CDMA Modulation)
dBm
35
Adjacent Channel Power Rejection
%
POUT =29dBm
-49
dBc
ACPR @ 885kHz
-56
dBc
ACPR @ 1980kHz
2:1
Output VSWR
10:1
No damage.
6:1
No oscillations. > -70dBc
S
Input VSWR
Frequency Range
452
Linear Gain
DE
SI
GN
Case T=25oC, VCC =3.4V, VREG =2.85V,
VMODE =2.85V, Freq=452MHz to 458MHz
(unless otherwise specified)
Low Power State-CDMA450
(VMODE High)
458
23
Maximum Linear Output Power
(CDMA Modulation)
16
Max ICC
dB
mA
POUT =+16dBm (all currents included)
-52
dBc
ACPR @ 885kHz
-70
dBc
ACPR @ 1980kHz
2:1
Output VSWR
DC Supply
Supply Voltage
3.0
3.4
45
VMODE Current
Turn On/Off Time
NO
T
10:1
No damage.
6:1
No oscillations. > -70dBc
4.2
V
mA
VMODE =Low
70
mA
VMODE =High
160
FO
R
Quiescent Current
NE
W
Input VSWR
MHz
dBm
160
Adjacent Channel Power Rejection
Total Current (Power Down)
VREG “Low” Voltage
0
VREG “High” Voltage
2.75
VMODE “Low” Voltage
0
VMODE “High” Voltage
1.8
4 of 12
dBc
29
Total Linear Efficiency
VREG Current
Condition
2.85
2.85
The maximum power out for VCC =3.0V is
28dBm.
10
mA
1
mA
<40
s
Time between VREG turned on and PA reaching
full power. Turn on/off time can be reduced by
lowering the bypass capacitor value on the
VREG line.
VREG =Low
10
A
0.5
V
2.95
V
0.5
V
3.0
V
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
DS110304
RF2192
Pin
1
2
3
4
Function
GND
GND
GND
RF IN
Description
Interface Schematic
Ground connection.
Ground connection.
Ground connection.
RF input. An external 100pF series capacitor is required as a DC block. In
addition, shunt inductor and series capacitor are required to provide
2:1VSWR.
VCC1
100 pF
RF IN
From
Bias
GND1
Stages
VREG1
Power Down control for first stage. Regulated voltage supply for amplifier
bias. In Power Down mode, both VREG and VMODE need to be LOW (<0.5V).
6
VMODE
7
VREG2
8
9
10
BIAS GND
GND
RF OUT
For nominal operation (High Power Mode), VMODE is set LOW. When set
HIGH, the driver and final stage are dynamically scaled to reduce the
device size and as a result to reduce the idle current.
Power Down control for the second stage. Regulated voltage supply for
amplifier bias. In Power Down mode, both VREG and VMODE need to be LOW
(<0.5V).
Bias circuitry ground. See application schematic.
VCC BIAS
15
16
Pkg
Base
VCC1
VCC1
GND
DE
SI
GN
14
RF output and power supply for final stage. This is the unmatched collector
output of the second stage. A DC block is required following the matching
components. The biasing may be provided via a parallel L-C set for resonance at the operating frequency of 824MHz to 849MHz. It is important to
select an inductor with very low DC resistance with a 1A current rating.
Alternatively, shunt microstrip techniques are also applicable and provide
very low DC resistance. Low frequency bypassing is required for stability.
Same as pin 10.
Same as pin 10.
RF OUT
F ro m B ia s
S ta g e s
See pin 10.
NE
W
RF OUT
RF OUT
2FO
Ground connection.
Harmonic trap. This pin connects to the RF output but is used for providing
a low impedance to the second harmonic of the operating frequency. An
inductor or transmission line resonating with an on chip capacitor at 2fo is
required at this pin.
Power supply for bias circuitry. A 100pF high frequency bypass capacitor is
recommended.
Power supply for first stage.
Same as Pin 15.
FO
R
11
12
13
S
5
NO
T
Ground connection. The backside of the package should be soldered to a
top side ground pad which is connected to the ground plane with multiple
vias. The pad should have a short thermal path to the ground plane.
DS110304
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
5 of 12
RF2192
Package Drawing
0.10 C B
-B-
2 PLCS
4.00
0.10 C B
3.75
2 PLCS
2.00
0.80
TYP
A
2
1.60
2 PLCS
1.50
3.75
4.00
SQ.
0.75
0.50
0.10 C A
INDEX AREA
2.00
0.45
0.28
0.10 C A
2 PLCS
S
2 PLCS
3.20
12°
MAX
DE
SI
GN
2 PLCS
1.00
0.90
Dimensions in mm.
0.05
0.75
0.65
NO
T
FO
R
NE
W
Shaded pin is lead 1.
0.05
0.00
C
0.10 M C A B
6 of 12
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
DS110304
RF2192
Evaluation Board Schematic
US-CDMA
C2
4.7 uF
VCC
C25
4.7 F
C6
100 pF
C30
C28
10 nF
C4
100 pF
L5
1 nH
TL3
TL5
1
C9
100 pF
16
15
14
2
13
L1*
12
TL2
TL1
4
L2
5.6 nH
C24
12 pF
6
C27
100 pF
VMODE
8
C14**
9
L4
39 nH
R4
0
NE
W
VREG
7
J4
RF OUT
* L1 is a High Q inductor (i.e., Coilcraft 0805HQ-series).
**C1 and C14 are High Q capacitors
(i.e., Johanson C-series).
R3
0
C26
4.7 F
C1**
10
5
C3
100 pF
S
11
DE
SI
GN
J1
RF IN
3
R2
510 
C5
100 pF
C17
2.4 pF
Board
CDMA (US)
C13
100 pF
Transmission
Line Length
CDMA (US)
C30 (pF)
C1 (pF)
L1 (nH)
C14 (pF)
100
9.1
20
9.1
TL1
TL2
TL3
TL5
15 mils
350 mils
105 mils
85 mils
NO
T
FO
R
R1
0
DS110304
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
7 of 12
RF2192
Application Schematic
CDMA-450MHz Band
P1-1
4.7 F
100 pF
4.7 uF
470 pF
6.8 nH
10 nF
6.8 nH
TL4
16
15
14
2
100 pF
13
L1*
7.5 pF
12
TL2
TL1
3
RF IN
11
4
12 nH
5
C1**
10
27 pF
6
7
1.2 nH
8
TL6
RF OUT
DE
SI
GN
510 
100 pF
C140**
S
1
100 pF
TL5
C100**
C14**
C3
100 pF
9
* L1 is a High Q inductor (i.e., Coilcraft 0805HQ-series).
**C1, C100, C14, and C140 are High Q capacitors
(i.e., Johanson C-series).
0
0
100 pF
39 nH
100 pF
NE
W
4.7 F
P2-1
P2-2
Board
CDMA (450 MHz)
Transmission
Line Length
C100 (pF) C140 (pF) C1 (pF)
15
13
15
L1 (nH)
20
C14 (pF)
13
TL1
TL2
TL6
TL4
TL5
15 mils
125 mils
220 mils
L=40 mils
L=75 mils
NO
T
FO
R
0
8 of 12
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
DS110304
RF2192
Evaluation Board Layout - US-CDMA
2.0” x 2.0”
NO
T
FO
R
NE
W
DE
SI
GN
S
Board Thickness 0.031”, Board Material FR-4, Multi-Layer, Ground Plane at 0.015”
DS110304
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
9 of 12
RF2192
PCB Design Requirements
PCB Surface Finish
The PCB surface finish used for RFMD’s qualification process is electroless nickel, immersion gold. Typical thickness is 3inch
to 8inch gold over 180inch nickel.
PCB Land Pattern Recommendation
PCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been developed and tested
for optimized assembly at RFMD; however, it may require some modifications to address company specific assembly processes. The PCB land pattern has been developed to accommodate lead and package tolerances.
PCB Metal Land Pattern
A = 0.51 x 0.89 (mm) Typ.
B = 0.89 x 0.51 (mm) Typ.
C = 1.52 (mm) Sq.
3.20 Typ.
0.81 Typ.
1.73 Typ.
0.81 Typ.
A
A
A
B
B
0.81 Typ.
B
C
B
B
0.94 Typ.
A
DE
SI
GN
A
S
Dimensions in mm.
Pin 1
1.60 Typ.
B
A
A
A
A
A
NE
W
1.60 Typ.
1.73 Typ.
NO
T
FO
R
Figure 1. PCB Metal Land Pattern (Top View)
10 of 12
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
DS110304
RF2192
PCB Solder Mask Pattern
Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB
Metal Land Pattern with a 3mil expansion to accommodate solder mask registration clearance around all pads. The centergrounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be provided in the master data or requested from the PCB fabrication supplier.
A = 0.71 x 1.09 (mm) Typ.
B = 1.09 x 0.71 (mm) Typ.
C = 1.73 (mm) Sq.
3.20 Typ.
0.81 Typ.
Dimensions in mm.
Pin 1
A
A
A
B
A
B
0.81 Typ.
C
B
0.94 Typ.
B
0.81 Typ.
1.60 Typ.
DE
SI
GN
B
S
1.73 Typ.
A
B
A
A
A
A
A
1.60 Typ.
1.73 Typ.
Figure 2. PCB Solder Mask (Top View)
NE
W
Thermal Pad and Via Design
The PCB metal land pattern has been designed with a thermal pad that matches the exposed die paddle size on the bottom of
the device.
Thermal vias are required in the PCB layout to effectively conduct heat away from the package. The via pattern has been
designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing
strategies.
NO
T
FO
R
The via pattern used for the RFMD qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size on a
0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. If micro vias are used in a design, it is suggested that the
quantity of vias be increased by a 4:1 ratio to achieve similar results.
DS110304
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
11 of 12
NO
T
FO
R
NE
W
DE
SI
GN
S
RF2192
12 of 12
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
DS110304