Download MJD295 5 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings

MJD2955
MJD2955
General Purpose Amplifier
Low Speed Switching Applications
D-PAK for Surface Mount Applications
•
•
•
•
•
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ -I “ Suffix)
Electrically Similar to Popular MJE2955T
DC Current Gain Specified to 10A
High Current Gain - Bandwidth Product:
fT = 2MHz (MIN), IC = -500mA
D-PAK
1
1.Base
I-PAK
1
2.Collector
3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
IB
Base Current
PC
Parameter
Value
- 70
Units
V
- 60
V
-5
V
- 10
A
-6
A
Collector Dissipation (TC=25°C)
20
W
Collector Dissipation (Ta=25°C)
1.75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
* Collector-Emitter Sustaining Voltage
Test Condition
IC = - 30mA, IB = 0
ICEO
Collector Cut-off Current
VCE = - 30V, IE = 0
- 50
µA
ICBO
Collector Cut-off Current
VCB = - 70V, IE = 0
-2
mA
- 0.5
mA
IEBO
Emitter Cut-off Current
VEB = - 5V, IC = 0
hFE
* DC Current Gain
VCE = - 4V, IC = - 4A
VCE = - 4V, IC = -10A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = - 4A, IB = - 0.4A
IC = - 10A, IB = - 3.3A
VBE(on)
* Base-Emitter ON Voltage
VCE = - 4V, IC = - 4A
fT
Current Gain Bandwidth Product
VCE = - 10V, IC = - 500mA
Min.
-60
20
5
Max.
100
- 1.1
-8
-1.8
2
Units
V
V
V
V
MHz
* Pulse Test: PW≤300ms, Duty Cycle≤2%
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©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD2955
Typical Characteristics
-10
hFE, DC CURRENT GAIN
VCE=-2V
100
10
1
-0.01
-0.1
-1
-10
VBE(sat),VCE(sat)[V], SATURATION VOLTAGE
1000
IC=10IB
VBE(sat)
-1
VCE(sat)
-0.1
-0.01
-0.1
-1
IC[A], COLLECTOR CURRENT
-10
-100
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
10
VCC =-30V
IC=10IB
IB1=IB2
tF,tSTG[µs], TURN OFF TIME
tR,tD[µs], TURN ON TIME
VCC =-30V
IC =10IB
IB1=IB2
1
tR
0.1
tD
VBE (off)=5V
0.01
-0.01
-0.1
-1
1
tSTG
tF
0.1
0.01
-0.01
-10
-0.1
IC[A], COLLECTOR CURRENT
-10
IC[A], COLLECTOR CURRENT
Figure 3. Turn On Time
Figure 4. Turn Off Time
-100
25
-10
DC
-1
1m
5m s
s
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
-1
10
0µ
s
50
0µ
s
-0.1
-0.01
-0.1
-1
-10
VCE[V], COLLECTOR EMITTER VOLTAGE
Figure 5. Safe Operating Area
-100
20
15
10
5
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
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©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD2955
Package Demensions
D-PAK
0.50 ±0.10
MIN0.55
0.91 ±0.10
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30TYP
[2.30±0.20]
(2XR0.25)
(1.00)
(3.05)
6.10 ±0.20
2.70 ±0.20
9.50 ±0.30
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(0.70)
2.30 ±0.20
(0.90)
6.10 ±0.20
2.30 ±0.10
(0.10)
2.30TYP
[2.30±0.20]
(0.50)
0.89 ±0.10
MAX0.96
(4.34)
2.70 ±0.20
0.80 ±0.20
0.60 ±0.20
(0.50)
9.50 ±0.30
5.34 ±0.30
0.70 ±0.20
6.60 ±0.20
0.76 ±0.10
Dimensions in Millimeters
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©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
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CORPORATION.
As used herein:
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2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
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reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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©2001 Fairchild Semiconductor Corporation
Rev. H3