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FJPF13009 NPN Silicon Transistor High Voltage Switch Mode Application • High Voltage Capability • High Switching Speed • Suitable for Motor Control and Switching Mode Power Supply TO-220F 1 1.Base Absolute Maximum Ratings* Symbol 2.Collector 3.Emitter TC = 25°C unless otherwise noted (notes_1) Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 12 A ICP Collector Current (Pulse) 24 A IB Base Current 6 A PC Collector Dissipation (TC = 25°C) 50 W TJ Junction Temperature 150 °C TSTG Storage Temperature Range -65 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES_1: 1) These ratings are based on a maximum junction temperature of 150 C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. ° hFE Classification Classification H1 H2 hFE1 8 ~ 17 15 ~ 28 © 2007 Fairchild Semiconductor Corporation FJPF13009 Rev. B www.fairchildsemi.com 1 FJPF13009 — NPN Silicon Transistor December 2007 Symbol VCEO(sus) TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max 400 Units Collector-Emitter Sustaining Voltage IC = 10mA, IB = 0 V IEBO Emitter Cut-off Current VEB = 9V, IC = 0 hFE * DC Current Gain VCE = 5V, IC = 5A (hFE1) VCE = 5V, IC = 8A VCE(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 1A IC = 8A, IB = 1.6A IC = 12A, IB = 3A 1 1.5 3 V V V VBE (sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 1A IC = 8A, IB = 1.6A 1.2 1.6 V V Cob Output Capacitance VCB = 10V, f = 0.1MHz fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A tON Turn On Time tSTG Storage Time VCC = 125V, IC = 8A IB1 = - IB2 = 1.6A, RL = 15,6Ω tF Fall Time 1 8 6 mA 40 30 180 pF 4 MHz 1.1 µs 3 µs 0.7 µs * Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2% Package Marking and Ordering Information Device Item (notes_2) Device Marking Package Packing Method FJPF13009TU J13009 TO-220F TUBE FJPF13009TTU J13009 TO-220F TUBE FJPF13009H2TU J130092 TO-220F TUBE Remarks Potting Type Notes_2 : 1) The Affix “-H2” means the hFE classification. 2) The Affix “-T” means the TO220F Potting type package option. 3) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging. © 2007 Fairchild Semiconductor Corporation FJPF13009 Rev. B www.fairchildsemi.com 2 FJPF13009 — NPN Silicon Transistor Electrical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 hFE, DC CURRENT GAIN VCE = 5V 10 1 0.1 1 10 10 IC = 3 IB VBE(sat) 1 0.1 VCE(sat) 0.01 0.1 100 IC[A], COLLECTOR CURRENT 1 10 100 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10000 1000 tR, tD [ns], TURN ON TIME Cob[pF], CAPACITANCE VCC=125V IC=5IB 100 10 1 0.1 1 10 100 1000 tR tD, VBE(off)=5V 100 10 0.1 1000 VCB[V], COLLECTOR BASE VOLTAGE Figure 3. Collector Output Capacitance 10 100 Figure 4. Turn On Time 100 10000 10 µs s 1000 10 tSTG DC s 1m IC[A], COLLECTOR CURRENT VCC=125V IC=5IB 0µ 10 tSTG, tF [ns], TURN OFF TIME 1 IC[A], COLLECTOR CURRENT 1 0.1 tF 100 0.1 0.01 1 10 1 100 Figure 5. Turn Off Time 100 1000 Figure 6. Forward Bias Safe Operating Area © 2007 Fairchild Semiconductor Corporation FJPF13009 Rev. B 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT www.fairchildsemi.com 3 FJPF13009 — NPN Silicon Transistor Typical Performance Characteristics (Continued) 100 70 60 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 10 1 0.1 50 40 30 20 10 0.01 10 0 100 1000 0 10000 50 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating © 2007 Fairchild Semiconductor Corporation FJPF13009 Rev. B 25 o VCE[V], COLLECTOR-EMITTER VOLTAGE www.fairchildsemi.com 4 FJPF13009 — NPN Silicon Transistor Typical Performance Characteristics The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM ® PDP-SPM™ Power220® SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2007 Fairchild Semiconductor Corporation FJPF13009 Rev. B www.fairchildsemi.com 5 FJPF13009 NPN Silicon Transistor TRADEMARKS