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FJB102 High Voltage Power Darlington Transistor • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) • Low Collector-Emitter Saturation Voltage Equivalent Circuit C B D2-PAK 1 1.Base 2.Collector R1 3.Emitter R2 R1 @ 10kW R2 @ 0.6kW E Absolute Maximum Ratings Value Units V CBO Symbol Collector-Base Voltage Parameter 100 V V CEO Collector-Emitter Voltage 100 V V EBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP * Collector Current (Pulse) 15 A IB Base Current (DC) 1 A PC Collector Dissipation (TC = 25°C) 80 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C * Pulse Test: PW = 300ms, Duty Cycle = 2% Pulsed Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Max. Units BV CEO(sus) Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 100 BV EBO Emitter-Base Breakdown Voltage IE = 500mA, IC = 0 10 ICBO Collector Cut-off Current V CB = 100V, IE = 0 50 ICEO Collector Cut-off Current V CE = 50V, IE = 0 50 mA IEBO Emitter Cut-off Current V EB = 5V, IC = 0 2 mA hFE DC Current Gain V CE = 4V, IC = 3A V CE = 4V, IC = 8A V CE(sat) Collector-Emitter Saturation Voltage 1000 200 V V mA 20000 IC = 3A, IB = 6mA 2.0 V IC = 8A, IB = 80mA 2.5 V V BE(ON) Base-Emitter Saturation Voltage V CE = 4V, IC = 8A 2.8 V C ob Output Capatitance V E = 10V, IE = 0, f = 1MHz 200 pF © 2007 Fairchild Semiconductor Corporation FJB102 Rev. 1.0.0 www.fairchildsemi.com 1 www.BDTIC.com/FAIRCHILD FJB102 — High Voltage Power Darlington Transistor October 2008 Device Marking FJB102 Device Package Reel Size Tape Width Quantity FJB102 D2-PAK -- -- -- © 2007 Fairchild Semiconductor Corporation FJB102 Rev. 1.0.0 www.fairchildsemi.com 2 www.BDTIC.com/FAIRCHILD FJB102 — High Voltage Power Darlington Transistor Package Marking and Ordering Information Figure 1. Static Characterstic Figure 2. DC Current Gain 5 10k VCE = 4V 4 3 IB = 300mA 2 IB = 200mA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = 1mA 1 1k IB = 100mA 0 0 1 2 3 4 100 0.1 5 1 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 4. Collector Output Capacitance 10k 10k IE=0, f=1MHz IC = 500 IB Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 3. Saturation Voltage VBE(sat) 1k VCE(sat) 100 0.1 1 10 1k 100 10 1 0.1 100 Figure 5. Forward Biased Safe Operating Area 100 120 PC[W], COLLECTOR POWER DISSIPATION 1ms 10 5ms DC 100ms 1 0.1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE 100 80 60 40 20 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE © 2007 Fairchild Semiconductor Corporation FJB102 Rev. 1.0.0 10 Figure 6. Power Derating 100 0.01 0.1 1 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT www.fairchildsemi.com 3 www.BDTIC.com/FAIRCHILD FJB102 — High Voltage Power Darlington Transistor Typical Performance Characteristics FJB102 — High Voltage Power Darlington Transistor Mechanical Dimensions D2-PAK Dimensions in Millimeters © 2007 Fairchild Semiconductor Corporation FJB102 Rev. 1.0.0 www.fairchildsemi.com 4 www.BDTIC.com/FAIRCHILD The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM ® PDP-SPM™ Power220® SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2008 Fairchild Semiconductor Corporation FJB102 Rev. A1 www.fairchildsemi.com 5 www.BDTIC.com/FAIRCHILD FJB102 High Voltage Power Darlington Transistor TRADEMARKS