Download BU406/406H/408 NPN Epitaxial Silicon Transistor BU406/406H/408 — NPN Epit axi

BU406/406H/408
NPN Epitaxial Silicon Transistor
Features
• High Voltage Switching
• Use In Horizontal Deflection Output Stage
TO-220
1
1.Base
Absolute Maximum Ratings
Symbol
2.Collector
TC = 25°C unless otherwise noted
Parameter
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
VEBO
IC
Emitter-Base Voltage
Collector Current (DC)
3.Emitter
Value
Units
400
200
V
V
6
7
V
A
10
4
A
A
ICP
IB
Collector Current (Pulse)
Base Current
PC
TJ
Collector Dissipation
Junction Temperature
60
150
W
°C
TSTG
Storage Temperature
- 55 to 150
°C
Electrical Characteristics
Symbol
ICES
IEBO
VCE(sat)
VBE(sat)
fT
tOFF
TC = 25°C unless otherwise noted
Parameter
Test Condition
Max.
Units
5
100
1
mA
μA
mA
VBE = 6V, IC = 0
1
mA
IC = 5A, IB = 0.5A
IC = 5A, IB = 0.8A
IC = 6A, IB = 1.2A
1
1
1
V
V
V
1.2
1.2
1.5
V
V
V
MHz
0.75
0.4
0.4
μs
μs
μs
Collector Cut-off Current
VCE = 400V, VBE = 0
VCE = 250V, VBE = 0
VCE = 250V, VBE = 0 @ TC=150°C
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
: BU406
: BU406H
: BU408
Base-Emitter Saturation Voltage
: BU406
: BU406H
: BU408
Current Gain Bandwidth Product
IC = 5A, IB = 0.5A
IC = 5A, IB = 0.5A
IC = 6A, IB = 1.2A
VCE = 10V, IC = 0.5A
Min.
10
Turn Off Time
: BU406
: BU406H
: BU408
IC = 5A, IB = 0.5A
IC = 5A, IB = 0.8A
IC = 6A, IB = 1.2A
www.BDTIC.com/FAIRCHILD
© 2012 Fairchild Semiconductor Corporation
BU406/406H/408 Rev. B0
www.fairchildsemi.com
1
BU406/406H/408 — NPN Epitaxial Silicon Transistor
April 2012
A
00m
IB = 2
IB =
1000
mA
180
60mA
IB = 1
A
= 140m
IB
4
VCE = 5V
0mA
IB = 12
0mA
IB = 10
mA
=
I B 80
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
5
A
IB = 60m
3
mA
I B = 40
2
IB = 20mA
1
0
0
1
2
3
4
5
6
7
8
9
100
10
1
10
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
10000
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10000
1000
f = 1MHz
IC = 10 IB
Cob [pF], CAPACITANCE
VCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE
100
VBE(sat)
1000
100
VCE(sat)
100
10
10
1
1
10
100
1000
10000
1
10
IC[mA], COLLECTOR CURRENT
100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
80
PC [W], POWER DISSIPATIOAN
10
IC Max. (Continuous)
s
s
m
10
s
0m
10 ited
m
Li
n
io
at
1m
ip
ss
Di
1
VCE MAX.
d
ite
im
bL
S/
IC[A], COLLECTOR CURRENT
70
IC Max. (Pulsed)
0.1
1
10
60
50
40
30
20
10
0
100
0
25
50
75
100
125
150
175
200
o
TC[ C], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
Figure 6. Power Derating
www.BDTIC.com/FAIRCHILD
© 2012 Fairchild Semiconductor Corporation
BU406/406H/408 Rev. B0
www.fairchildsemi.com
2
BU406/406H/408 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
BU406/406H/408 — NPN Epitaxial Silicon Transistor
Physical Dimensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
www.BDTIC.com/FAIRCHILD
© 2012 Fairchild Semiconductor Corporation
BU406/406H/408 Rev. B0
www.fairchildsemi.com
3
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I61
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