Download FGH60N60SMD_F085 600V, 60A Field Stop IGBT F G

FGH60N60SMD_F085
600V, 60A Field Stop IGBT
Features
General Description
175oC
• Maximum Junction Temperature : TJ =
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop Trench IGBTs offer the optimum performance for
Automotive chargers, Solar Inverter, UPS and Digital Power
Generator where low conduction and switching losses are
essential.
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: VCE(sat) = 1.8V(Typ.) @ IC = 60A
• High input impedance
Applications
• Tightened Parameter Distribution
• RoHS compliant
• Automotive chargers, Converters, High Voltage Auxiliaries
• Qualified to Automotive Requirements of AEC-Q101
• Solar Inverters, UPS, SMPS, PFC
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Units
VCES
Collector to Emitter Voltage
600
V
VGES
Gate to Emitter Voltage
± 20
V
IC
o
Collector Current
@ TC = 25 C
120
A
Collector Current
@ TC = 100oC
60
A
ICM (1)
Pulsed Collector Current
IF
Diode Forward Current
@ TC = 25oC
Diode Forward Current
@ TC = 100oC
IFM(1)
Pulsed Diode Maximum Forward Current
PD
180
A
60
A
30
A
180
A
W
Maximum Power Dissipation
@ TC = 25oC
600
Maximum Power Dissipation
@ TC = 100oC
300
W
TJ
Operating Junction Temperature
-55 to +175
o
Tstg
Storage Temperature Range
-55 to +175
o
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
C
C
300
oC
Ratings
Units
Thermal Characteristics
Symbol
Parameter
RθJC(IGBT) ( 2)
Thermal Resistance, Junction to Case
0.25
o
RθJC(Diode)
Thermal Resistance, Junction to Case
1.1
oC/W
Symbol
RθJA
Parameter
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
©2013 Fairchild Semiconductor Corporation
FGH60N60SMD_F085 Rev. C1
1
C/W
Typ.
Units
45
oC/W
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FGH60N60SMD_F085 600V 60A Field Stop IGBT
December 2013
Device Marking
Device
Package
Packing Type
Qty per Tube
FGH60N60SMD
FGH60N60SMD_F085
TO-247
Tube
30ea
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
-
-
V
-
0.22
-
V/oC
-
-
250
ICES at 80%*BVCES, 175 C
-
-
1100
μA
VGE = VGES, VCE = 0V
-
-
±400
nA
IC = 250uA, VCE = VGE
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250uA
ΔBVCES
ΔTJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250uA
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
o
IGES
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
3.5
4.7
6.0
V
IC = 60A, VGE = 15V
-
1.8
2.5
V
IC = 60A, VGE = 15V,
TC = 175oC
-
2.14
-
V
-
2780
3700
pF
VCE = 30V, VGE = 0V,
f = 1MHz
-
260
345
pF
-
80
110
pF
-
22
29
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
-
46
60
ns
td(off)
Turn-Off Delay Time
-
116
151
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Ets
VCC = 400V, IC = 60A,
RG = 3Ω, VGE = 15V,
Inductive Load, TC = 25oC
-
14
18
ns
-
1.59
2.23
mJ
Turn-Off Switching Loss
-
0.39
0.55
mJ
Total Switching Loss
-
1.98
2.78
mJ
td(on)
Turn-On Delay Time
-
22
28
ns
tr
Rise Time
-
44
58
ns
td(off)
Turn-Off Delay Time
-
124
161
ns
tf
Fall Time
-
15
20
ns
VCC = 400V, IC = 60A,
RG = 3Ω, VGE = 15V,
Inductive Load, TC = 175oC
Eon
Turn-On Switching Loss
-
2.41
3.13
mJ
Eoff
Turn-Off Switching Loss
-
1.08
1.42
mJ
Ets
Total Switching Loss
-
3.49
4.55
mJ
Notes:
1:Repetitive rating: Pulse width limited by max junction temperature.
2:Rthjc for TO-247 : according to Mil standard 883-1012 test method. Rthja for TO-247 : according to JESD51-2, test method
environmental condition and JESD51-10, test boards for through hole perimeter leaded package thermal measurements.
JESD51-3 : Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Package.
FGH60N60SMD_F085 Rev. C1
2
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FGH60N60SMD_F085 600V 60A Field Stop IGBT
Package Marking and Ordering Information
Symbol
Qg
Parameter
Test Conditions
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCE = 400V, IC = 60A,
VGE = 15V
Electrical Characteristics of the Diode
Symbol
(Continued)
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Test Conditions
IF = 30A
Diode Reverse Recovery Charge
FGH60N60SMD_F085 Rev. C1
Typ.
Max
Units
-
187
280
nC
-
20
29
nC
-
92
138
nC
Units
TC = 25°C unless otherwise noted
IF =30A, dIF/dt = 200A/μs
Qrr
Min.
Min.
Typ.
Max
TC = 25oC
-
2.1
2.7
TC = 175oC
-
1.48
-
TC = 25oC
-
33
42
-
115
-
-
53
69
-
606
-
TC =
TC = 25oC
TC =
3
175oC
175oC
V
ns
nC
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FGH60N60SMD_F085 600V 60A Field Stop IGBT
Electrical Characteristics of the IGBT
Figure 1. Typical Output Characteristics
VGE= 20V
180
15V
12V
120
60
0
VGE = 20V
15V
12V
10V
Collector Current, IC [A]
Collector Current, IC [A]
180
Figure 2. Typical Output Characteristics
8V
120
10V
60
8V
T C = 175oC
TC = 25oC
0
2
4
6
8
Collector-Emitter Voltage, V CE [V]
0
10
Figure 3. Typical Saturation Voltage
Characteristics
0
2
4
6
8
Collector-Emitter Voltage, V CE [V]
10
Figure 4. Transfer Characteristics
120
180
Collector Current, IC [A]
Collector Current, IC [A]
Common Emitter
VCE = 20V
120
60
Common Emitter
VGE = 15V
o
TC = 25 C
90
o
TC = 175 C
60
30
o
T C = 25 C
o
T C = 175 C
0
0
0
1
2
3
4
Collector-Emitter Voltage, V CE [V]
5
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
4
8
Gate-Emitter Voltage,V GE [V]
12
Figure 6. Saturation Voltage vs. VGE
4
20
Common Emitter
Common Emitter
VGE = 15V
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, VCE [V]
0
120A
3
60A
2
IC = 30A
120A
12
60A
8
IC = 30A
4
0
1
25
50
75
100
125
150
175
o
Collector-EmitterCase Temperature, TC [ C]
FGH60N60SMD_F085 Rev. C1
T C = -40oC
16
4
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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FGH60N60SMD_F085 600V 60A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
o
TC = 25 C
16
120A
12
60A
8
IC = 30A
4
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
Common Emitter
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, V CE [V]
20
o
TC = 175 C
16
120A
12
60A
8
0
20
Figure 9. Capacitance Characteristics
4
Gate-Emitter Voltage, V GE [V]
1000
Coes
Common Emitter
VGE = 0V, f = 1MHz
100
C res
12
VCC = 100V
200V
6
3
Common Emitter
o
o
1
300V
9
TC = 25 C
T C = 25 C
10
Collector-Emitter Voltage, V CE [V]
0
30
Figure 11. SOA Characteristics
0
50
100
150
Gate Charge, Qg [nC]
200
Figure 12. Turn-on Characteristics vs.
Gate Resistance
300
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
10μs
100
o
TC = 25 C
100μ s
10 ms
10
o
TC = 175 C
Switching Time [ns]
Collector Current, Ic [A]
20
15
C ies
50
8
12
16
Gate-Emitter Voltage, VGE [V]
Figure 10. Gate charge Characteristics
10000
Capacitance [pF]
IC = 30A
4
1ms
tr
100
DC
*Notes:
1
o
1. TC = 25 C
td(on)
o
2. TJ ≤ 175 C
3. Single Pulse
0.1
1
10
100
Collector-Emitter Voltage, V CE [V]
FGH60N60SMD_F085 Rev. C1
10
1000
5
0
10
20
30
40
Gate Resistance, RG [Ω]
50
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FGH60N60SMD_F085 600V 60A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
500
10000
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
o
100
Switching Time [ns]
td(off)
o
1000
Switching Time [ns]
TC = 25 C
TC = 175 C
tf
100
tr
td(on)
10
Common Emitter
VGE = 15V, RG = 3Ω
o
TC = 25 C
o
TC = 175 C
10
1
0
10
20
30
40
Gate Resistance, RG [Ω]
0
50
30
60
Figure 15. Turn-off Characteristics vs.
Collector Current
150
10
Eon
Switching Loss [mJ]
td(off)
Switching Time [ns]
120
Figure 16. Switching Loss vs.
Gate Resistance
1000
100
tf
10
Common Emitter
VGE = 15V, RG = 3Ω
1
Eoff
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
o
TC = 25 C
o
TC = 25 C
o
TC = 175 C
o
TC = 175 C
1
90
Collector Current, IC [A]
0.1
0
30
60
90
120
150
0
10
20
30
40
50
Gate Resistance, RG [Ω]
Collector Current, IC [A]
Figure 17. Switching Loss vs.
Collector Current
Figure 18. Turn off Switching
SOA Characteristics
300
50
Common Emitter
VGE = 15V, RG = 3Ω
100
Collector Current, IC [A]
Switching Loss [mJ]
o
TC = 25 C
10
o
TC = 175 C
Eon
1
Eoff
10
Safe Operating Area
o
VGE = 15V, TC ≤ 175 C
0.1
0
30
60
90
120
1
150
Collector Current, IC [A]
FGH60N60SMD_F085 Rev. C1
1
Collector-Emitter Voltage, VCE [V]
6
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FGH60N60SMD_F085 600V 60A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 20. Reverse Recovery Current
200
15
o
TC = 25 C
100
o
TC = 175 C
Reverse Current Irr [A]
Forward Current, IF [A]
12
o
TC = 175 C
10
o
T C = 125 C
o
TC = 75 C
di/dt = 200A/μ s
9
100A/ μs
6
di/dt = 200A/ μs
3
o
TC = 25 C
1
0
100A/ μ s
1
2
3
Forward Voltage, V F [V]
0
4
0
Figure 21. Stored Charge
200
o
TC = 25oC
T C = 25 C
Reverse Recovery Time, trr [ns]
Stored Recovery Charge, Qrr [nC]
60
Figure 22. Reverse Recovery Time
800
200A/ μ s
o
T C = 175 C
600
di/dt = 100A/ μ s
400
200
0
20
40
Forwad Current, I F [A]
200A/μ s
0
di/dt = 100A/μ s
20
40
Forwad Current, IF [A]
150
200A/μ s
100
di/dt = 100A/μs
50
200A/ μs
0
60
di/dt = 100A/μs
o
TC = 175 C
0
20
40
60
Forward Current, IF [A]
Figure 23. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
0.5
0.5
0.1
0.2
0.01
0.1
0.05
0.02
PDM
0.01
t1
single pulse
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
FGH60N60SMD_F085 Rev. C1
7
www.fairchildsemi.com
FGH60N60SMD_F085 600V 60A Field Stop IGBT
Typical Performance Characteristics
FGH60N60SMD_F085 600V 60A Field Stop IGBT
Mechanical Dimensions
TO - 247AB (FKS PKG CODE 001)
FGH60N60SMD_F085 Rev. C1
9
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I66