Download FDS4935BZ Dual 30 Volt P-Channel PowerTrench MOSFET General Description

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FDS4935BZ
Dual 30 Volt P-Channel PowerTrench“ MOSFET
General Description
Features
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
x –6.9 A, –30 V. RDS(ON) = 22 m: @ VGS = –10 V
RDS(ON) = 35 m: @ VGS = – 4.5 V
x Extended VGSS range (–25V) for battery applications
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
x ESD protection diode (note 3)
x High performance trench technology for extremely
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
low RDS(ON)
x High power and current handling capability
DD1
DD1
D2
D
4
5
DD2
6
3
Q1
2
7
SO-8
Pin 1 SO-8
G2
S2 S
8
S
Q2
1
S
Absolute Maximum Ratings
Symbol
G1
S1 G
TA=25oC unless otherwise noted
Ratings
Units
VDS\
Drain-Source Voltage
Parameter
–30
V
VGS
Gate-Source Voltage
+25
V
ID
Drain Current
–6.9
A
– Continuous
(Note 1a)
– Pulsed
PD
–50
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1.0
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
W
0.9
–55 to +150
qC
(Note 1a)
78
qC/W
(Note 1)
40
qC/W
Thermal Characteristics
RTJA
Thermal Resistance, Junction-to-Ambient
RTJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4935BZ
FDS4935BZ
13’’
12mm
2500 units
”2006 Fairchild Semiconductor Corporation
FDS4935BZ Rev B1 (W)
FDS4935BZ
September 2006
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
ID = –250 PA
–30
Typ
Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
IGSS
V
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V,
Zero Gate Voltage Drain Current
VDS = –24 V, VGS = 0 V
–1
Gate–Body Leakage
VGS = +25 V, VDS = 0 V
+10
PA
PA
–3
V
On Characteristics
24
ID = –250 PA,Referenced to 25qC
mV/qC
(Note 2)
VGS(th)
'VGS(th)
'TJ
rDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
VDS = VGS, ID = –250 PA
ID = –250 PA,Referenced to 25qC
–1
–1.9
–5
mV/qC
VGS = –10 V, ID = –6.9 A
VGS = –4.5 V, ID = –5.3 A
VGS = –10 V, ID = –6.9A,TJ=125qC
VDS = –5 V, ID = –6.9 A
18
27.5
26
22
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz
1360
pF
240
pF
200
pF
22
35
34
m:
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
(Note 2)
VDD = –15 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 :
12
22
ns
13
23
ns
68
108
ns
tf
Turn–Off Fall Time
Qg(TOT)
Total Gate Charge, VGS = 10V
Qg(TOT)
Total Gate Charge, VGS = 5V
Qgs
Gate–Source Charge
4
nC
Qgd
Gate–Drain Charge
7
nC
VDS = –15 V, ID = –6.9 A,
VGS = –10 V
38
61
ns
29
40
nC
16
23
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
tRR
QRR
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = –2.1 A
Voltage
I
Reverse Recovery Time
F = –8.8 A,
d
iF/dt = 100 A/µs
Reverse Recovery Charge
(Note 2)
–0.8
(Note 2)
–2.1
A
–1.2
V
24
ns
9
nC
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design.
a) 78°C/W steady state
when mounted on a
2
1in pad of 2 oz
copper
b) 125°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDS4935BZ Rev B1 (W)
FDS4935BZ
Electrical Characteristics
FDS4935BZ
Typical Characteristics
50
3
-5.0V
-4.5V
40
-ID, DRAIN CURRENT (A)
VGS = -3.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -10V
-6.0V
30
-4.0V
20
-3.5V
10
-3.0V
2.6
2.2
-4.0V
1.8
-4.5V
-5.0V
1.4
-8.0V
0
1
2
3
-VDS, DRAIN TO SOURCE VOLTAGE (V)
0
4
Figure 1. On-Region Characteristics.
10
20
30
-ID, DRAIN CURRENT (A)
40
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.08
1.6
ID = -8.8A
VGS = -10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-10V
1
0.6
0
1.4
1.2
1
0.8
0.6
ID = -4.4A
0.06
TA = 125oC
0.04
TA = 25oC
0.02
0
-50
-25
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
2
150
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
50
-IS, REVERSE DRAIN CURRENT (A)
VDS = -5V
-ID, DRAIN CURRENT (A)
-6.0V
40
30
20
o
TA = 125 C
o
-55 C
10
o
VGS = 0V
10
TA = 125oC
1
o
25 C
-55oC
0.1
0.01
25 C
0.001
0
2
2.5
3
3.5
4
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.4
0.8
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.6
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4935BZ Rev B1 (W)
FDS4935BZ
Typical Characteristics
2000
f = 1 MHz
VGS = 0 V
ID = -8.8A
1600
8
VDS = -10V
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
10
-20V
6
-15V
4
Ciss
1200
800
Coss
400
2
Crss
0
0
0
6
12
18
24
Qg, GATE CHARGE (nC)
30
0
36
20
25
30
P(pk), PEAK TRANSIENT POWER (W)
50
RDS(ON) LIMIT
-ID, DRAIN CURRENT (A)
15
Figure 8. Capacitance Characteristics.
100
100Ps
1ms
10
10ms
100ms
1s
1
DC
VGS = -10V
SINGLE PULSE
RTJA = 125oC/W
TA = 25oC
0.01
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RTJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
0.1
5
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RTJA(t) = r(t) * RTJA
0.2
0.1
o
RTJA = 125 C/W
0.1
0.05
P(pk)
0.02
t1
t2
TJ - TA = P * RTJA(t)
Duty Cycle, D = t1 / t2
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4935BZ Rev B1 (W)
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(a) are intended for surgical implant into the body, or (b) support or
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accordance with instructions for use provided in the labeling, can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20