Download FDG327NZ 20V N-Channel PowerTrench MOSFET General Description

FDG327NZ
20V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low RDS(ON) and gate charge (QG) in a small package.
• 1.5 A, 20 V.
Applications
• Low gate charge
• DC/DC converter
• High performance trench technology for extremely
low RDS(ON)
RDS(ON) = 90 mΩ @ VGS = 4.5 V.
RDS(ON) = 100 mΩ @ VGS = 2.5 V
RDS(ON) = 140 mΩ @ VGS = 1.8 V
• Fast switching speed
• Power management
• Load switch
• High power and current handling capability.
S
D
D
G
Pin 1
SC70-6
D
D
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
±8
ID
Drain Current
– Continuous
(Note 1a)
– Pulsed
1.5
A
6
PD
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
0.42
W
0.38
–55 to +150
°C
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
300
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
333
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.37
FDG327NZ
7’’
8mm
3000 units
2008 Fairchild Semiconductor Corporation
FDG327NZ Rev C1(W)
FDG327NZ
August 2008
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min Typ
Max
Units
Off Characteristics
ID = 250 µA
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25°C
VDS = 16 V,
VGS = 0 V
1
µA
IGSS
Gate–Body Leakage
VGS = ± 8 V,
VDS = 0 V
±10
µA
1.5
V
On Characteristics
20
V
11
mV/°C
(Note 2)
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS(th)
∆VGS(th)
∆TJ
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
0.4
0.7
RDS(on)
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
VGS = 4.5 V,
ID = 1.5 A
VGS = 2.5 V,
ID = 1.4 A
VGS = 1.8 V,
ID = 1.2 A
VGS = 4.5 V, ID = 1.5 A, TJ =125°C
VGS = 4.5V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 10 V,
ID = 1.5 A
2.2
S
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V
412
pF
81
pF
44
pF
VGS = 15 mV, f = 1.0 MHz
1.9
Ω
VDD = 10 V,
VGS = 4.5 V,
6.2
13
ns
2.3
10
ns
18
33
ns
2.9
10
ns
4.2
6
nC
–2
68
77
90
86
mV/°C
90
100
140
123
mΩ
3
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDS = 10 V,
VGS = 4.5 V
ID = 1 A,
RGEN = 6 Ω
ID = 1.5 A,
0.4
nC
1
nC
Drain–Source Diode Characteristics and Maximum Ratings
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 0.32 A
IF = 1.5 A,
diF/dt = 100 A/µs
0.6
(Note 2)
1.2
V
4
nS
2
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
300°C/W when
mounted on a 1in2 pad
of 2 oz copper.
b)
333°C/W when mounted
on a minimum pad of 2 oz
copper.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDG327NZ Rev C1(W)
FDG327NZ
Electrical Characteristics
FDG327NZ
Typical Characteristics
1.8
VGS= 4.5V
2.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10
ID, DRAIN CURRENT (A)
1.8V
2.5V
V
8
6
1.5V
4
2
VGS=1.5V
1.6
1.8V
1.4
2.0V
1.2
2.5V
3.0V
4.5V
1
0.8
0
0
1
2
0
3
2
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
10
0.22
ID = 1.5A
VGS = 4.5V
1.4
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
8
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.5
1.3
1.2
1.1
1
0.9
0.8
0.7
ID = 0.8A
0.17
TA = 125oC
0.12
TA = 25oC
0.07
0.02
-50
-25
0
25
50
75
100
125
150
0.5
1.5
o
TJ, JUNCTION TEMPERATURE ( C)
2.5
3.5
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
10
TA = -55oC
o
IS, REVERSE DRAIN CURRENT (A)
VDS = 5.0V
ID, DRAIN CURRENT (A)
6
ID, DRAIN CURRENT (A)
25 C
8
o
125 C
6
4
2
VGS = 0V
1
TA = 125oC
0.1
25oC
-55oC
0.01
0.001
0.0001
0
0.5
1
1.5
2
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG327NZ Rev C1(W)
FDG327NZ
Typical Characteristics
600
f = 1 MHz
VGS = 0 V
VDS = 5V
ID = 1.5A
10V
500
4
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
5
15V
3
2
1
CISS
400
300
200
COSS
100
CRSS
0
0
0
1
2
3
4
0
5
5
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100µs
1ms
10ms
100ms
1s
1
10s
DC
VGS = 4.5V
SINGLE PULSE
RθJA = 333oC/W
TA = 25oC
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 333°C/W
TA = 25°C
15
10
5
0
0.0001
0.001
0.01
VDS, DRAIN-SOURCE VOLTAGE (V)
0.1
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
20
20
RDS(ON) LIMIT
0.1
15
Figure 8. Capacitance Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
10
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
o
RθJA = 333 C/W
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDG327NZ Rev C1(W)
FDG327NZ
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is
not intended to be an exhaustive list of all such trademarks.
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
™
®
tm
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
®
tm
PDP SPM™
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
The Power Franchise®
tm
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is
committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized
distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I35
FDG327NZ Rev.C1(W)
www.fairchildsemi.com