Download 1.0 A, 300 V NPN Bipolar Power Transistor

TIP47G, TIP48G, TIP50G
High Voltage NPN Silicon
Power Transistors
This series is designed for line operated audio output amplifier,
SWITCHMODE power supply drivers and other switching
applications.
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Features
•
•
•
•
250 V to 400 V (Min) − VCEO(sus)
1 A Rated Collector Current
Popular TO−220 Plastic Package
These Devices are Pb−Free and are RoHS Compliant*
1.0 AMPERE
POWER TRANSISTORS
NPN SILICON
250−300− 400 VOLTS
40 WATTS
MAXIMUM RATINGS
Rating
Symbol
TIP47
TIP48
TIP50
Unit
VCEO
250
300
400
Vdc
Collector − Base Voltage
VCB
350
400
500
Vdc
Emitter − Base Voltage
VEB
Collector Current
− Continuous
− Peak
IC
Base Current
IB
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
Unclamped Inducting Load
Energy (See Figure 8)
Collector − Emitter Voltage
5.0
Adc
1.0
2.0
0.6
Adc
40
0.32
W
W/_C
1
W
W/_C
E
20
mJ
TJ, Tstg
−65 to +150
_C
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
RqJC
3.125
°C/W
Thermal Resistance,
Junction−to−Ambient
RqJA
62.5
°C/W
THERMAL CHARACTERISTICS
Characteristic
4
Vdc
2.0
0.016
Operating and Storage
Junction Temperature Range
MARKING
DIAGRAM
TO−220AB
CASE 221A
STYLE 1
2
TIPxxG
AYWW
3
TIPxx
xx
A
Y
WW
G
= Device Code
= 47, 48, or 50
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 9
1
Publication Order Number:
TIP47/D
TIP47G, TIP48G, TIP50G
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
250
300
400
−
−
−
Vdc
−
−
−
1.0
1.0
1.0
−
−
−
1.0
1.0
1.0
−
1.0
30
10
150
−
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
TIP47
TIP48
TIP50
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
(VCE = 200 Vdc, IB = 0)
(VCE = 300 Vdc, IB = 0)
TIP47
TIP48
TIP50
Collector Cutoff Current
(VCE = 350 Vdc, VBE = 0)
(VCE = 400 Vdc, VBE = 0)
(VCE = 500 Vdc, VBE = 0)
TIP47
TIP48
TIP50
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ICEO
mAdc
ICES
IEBO
mAdc
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.3 Adc, VCE = 10 Vdc)
(IC = 1.0 Adc, VCE = 10 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.2 Adc)
VCE(sat)
−
1.0
Vdc
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 10 Vdc)
VBE(on)
−
1.5
Vdc
Current−Gain − Bandwidth Product
(IC = 0.1 Adc, VCE = 10 Vdc, f = 2.0 MHz)
fT
10
−
MHz
Small−Signal Current Gain
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
25
−
−
DYNAMIC CHARACTERISTICS
1. Pulse Test: Pulse width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device
Package
Shipping
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TIP47
TIP47G
TIP48
TIP48G
TIP49
TIP49G
TIP50
TIP50G
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2
PD, POWER DISSIPATION (WATTS)
TIP47G, TIP48G, TIP50G
TA
4
TC
40
3
30
2
20
1
10
0
0
TC
TA
20
0
40
60
120
100
80
TC, CASE TEMPERATURE (°C)
140
160
Figure 1. Power Derating
TURN-ON PULSE
APPROX
+11 V
1.0
VCC
RC
TJ = 25°C
VCC = 200 V
IC/IB = 5.0
0.5
Vin 0
VEB(off)
SCOPE
Vin
t1
t3
APPROX
+11 V
Cjd << Ceb
t1 ≤ 7.0 ns
100 < t2 < 500 ms
t3 < 15 ns
Vin
t, TIME (s)
μ
RB
-4.0 V
0.1
td
0.05
DUTY CYCLE ≈ 2.0%
APPROX -9.0 V
t2
tr
0.2
0.02
0.01
0.02
TURN-OFF PULSE
0.05
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED
0.3
0.2
1.0
2.0
Figure 3. Turn−On Time
Figure 2. Switching Time Equivalent Circuit
1.0
0.7
0.5
0.2
0.5
0.1
IC, COLLECTOR CURRENT (AMPS)
D = 0.5
0.2
0.1
0.1
0.07
0.05
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.01
0.02
0.05
1.0
P(pk)
ZqJC(t) = r(t) RqJC
RqJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.05
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
Figure 4. Thermal Response
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3
20
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200
500
1.0 k
TIP47G, TIP48G, TIP50G
IC, COLLECTOR CURRENT (AMPS)
5.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
TC ≤ 25°C
2.0
100ms
1.0
1.0ms
0.5
dc
0.2
500ms
SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ 25°C
BONDING WIRE LIMITED
0.1
0.05
TIP47
TIP48
TIP50
CURVES APPLY
BELOW RATED VCEO
0.02
5.0
100
200
10
20
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
Figure 5. Active Region Safe Operating Area
5.0
+4.5
θV, TEMPERATURE COEFFICIENTS (mV/°C)
ts
2.0
t, TIME (s)
μ
1.0
TJ = 25°C
VCC = 200 V
IC/IB = 5.0
0.5
tf
0.2
0.1
0.05
0.02
0.05
0.1
0.2
0.5
IC, COLLECTOR CURRENT (AMPS)
1.0
2.0
+3.5
*APPLIES FOR IC/IB ≤ hFE/5
+2.5
+1.5
+25°C to +150°C
+0.5
0
-0.5
qVC FOR VCE(sat)
-1.5
qVB FOR VBE
-55°C to +25°C
+25°C to +150°C
-55°C to +25°C
-2.5
0.02
0.05
0.1
INPUT
VOLTAGE
INPUT
TUT
50
VBB1 = 10 V
RBB2 =
100 W
VBB2 =
0
0V
tw ≈ 3 ms
(SEE NOTE A)
-5 V
100 mH
100 ms
VCC = 20 V
50
1.0
Figure 7. Temperature Coefficients
VCE MONITOR
RBB1 =
150 W
0.5
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Turn−Off Time
MJE171
0.2
COLLECTOR
CURRENT
IC MONITOR
RS =
0.1 W
0.63 A
0V
VCER
COLLECTOR
VOLTAGE
10 V
VCE(sat)
Note A: Input pulse width is increased until ICM = 0.63 A.
Figure 8. Inductive Load Switching
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4
2.0
TIP47G, TIP48G, TIP50G
200
VCE = 10 V
hFE , DC CURRENT GAIN
100
60
40
20
TJ = 150°C
25°C
-55°C
10
6.0
4.0
2.0
0.02
0.04 0.06
0.1
0.2
0.4 0.6
IC, COLLECTOR CURRENT (AMPS)
1.0
2.0
1.0
2.0
Figure 9. DC Current Gain
1.4
V, VOLTAGE (VOLTS)
1.2
1.0
VBE(sat) @ IC/IB = 5.0 V
0.8
VBE(on) @ VCE = 4 V
0.6
0.4
0.2
0
0.02
VCE(sat) @ IC/IB = 5.0 V
0.04 0.06
0.1
0.2
0.4 0.6
IC, COLLECTOR CURRENT (AMPS)
Figure 10. “On” Voltages
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5
TIP47G, TIP48G, TIP50G
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
−T−
B
F
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.036
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.91
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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Sales Representative
TIP47/D