Download R5011ANX

R5011ANX
Transistors
10V Drive Nch MOSFET
R5011ANX
zDimensions (Unit : mm)
zStructure
Silicon N-channel MOSFET
TO-220FM
10.0
φ3.2
4.5
8.0
1.2
1.3
14.0
2.5
15.0
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS)
guaranteed to be r30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
12.0
2.8
0.8
(1)Base
2.54
(2)Collector
2.54
0.75
2.6
(1) (2) (3)
(3)Emitter
zApplications
Switching
zPackaging specifications
zInner circuit
Package
Type
Bulk
−
Code
Basic ordering unit (pieces)
500
∗1
R5011ANX
zAbsolute maximum ratings (Ta=25qC)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
500
V
Gate-source voltage
VGSS
±30
V
∗3
±11
A
∗1
±44
A
11
A
∗1
Drain current
Source current
(Body Diode)
Continuous
ID
Pulsed
IDP
Continuous
IS
∗3
44
A
Avalanche Current
IAS
∗2
5.5
A
∗2
8.1
mJ
50
W
Pulsed
ISP
Avalanche Energy
EAS
Total power dissipation (Tc=25°C)
PD
Channel temperature
Tch
150
°C
Tstg
−55 to +150
°C
Range of storage temperature
(1)
(1) Gate
(2) Drain
(3) Source
(2)
(3)
∗1 Body Diode
∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum tempterature allowed
1/5
R5011ANX
Transistors
zThermal resistance
Symbol
Limits
Unit
Rth(ch-c)
2.5
°C/W
Parameter
Channel to case
zElectrical characteristics (Ta=25qC)
Parameter
Symbol
Min.
Typ.
Max.
Unit
IGSS
−
−
±100
nA
V(BR)DSS
500
−
−
V
ID=1mA, VGS=0V
IDSS
−
−
100
μA
VDS=500V, VGS=0V
Gate threshold voltage
VGS(th)
2.5
−
4.5
V
VDS=10V, ID=1mA
Static drain-source on-state resistance
RDS(on) ∗
−
0.38
0.5
Ω
ID=5.5A, VGS=10V
3.5
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
∗
Conditions
VGS=±30V, VDS=0V
−
−
S
ID=5.5A, VDS=10V
Input capacitance
Ciss
−
1000
−
pF
VDS=25V
Output capacitance
Coss
−
400
−
pF
VGS=0V
Forward transfer admittance
| Yfs |
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
tr
Rise time
Turn-off delay time
td(off)
tf
Fall time
Qg
Total gate charge
Gate-source charge
Qgs
Gate-drain charge
Qgd
−
35
−
pF
f=1MHz
∗
−
26
−
ns
ID=5.5A, VDD 250V
∗
−
28
−
ns
VGS=10V
∗
−
75
−
ns
RL=45.5Ω
∗
−
30
−
ns
RG=10Ω
∗
−
30
−
nC
∗
−
7
−
nC
∗
−
12
−
nC
VDD 250V
ID=11A
VGS=10V
RL=22.7Ω / RG=10Ω
∗ Pulsed
zBody diode characteristics (Source-drain) (Ta=25qC)
Parameter
Forward voltage
Symbol
VSD ∗
Min.
−
Typ.
−
Max.
1.5
Unit
V
Conditions
IS= 11A, VGS=0V
∗ Pulsed
2/5
R5011ANX
Transistors
zElectrical characteristic curves
20
PW =1ms
PW =100ms
1
DC operation
0.1
Ta= 25°C
Pulsed
8.0V
15
7.0V
6.0V
6.5V
10
5.5V
5.0V
5
Ta = 25°C
Single Pulse
0.01
0.1
1
10
100
1000
0
10
20
30
40
2
50
0
0.1
0.01
3.0
4.5
6.0
5
4
3
2
1
0
-50
0
50
100
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R DS(on) (ȍ)
0.6
0.5
ID = 11.0A
0.4
ID = 5.5A
0.3
0.2
0.1
0
0
5
10
GATE-SOURCE VOLTAGE : VGS (V)
Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
0.1
15
1
10
100
DRAIN CURRENT : ID (A)
Fig.5 Gate Threshold Voltage
vs. Channel Temperature
0.7
5
1
0.01
0.1
150
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
1
0.8
4
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
VGS= 10V
Pulsed
CHANNEL TEMPERATURE: Tch (°C)
Ta=25°C
Pulsed
3
10
GATE-SOURCE VOLTAGE : VGS (V)
1
2
Fig.3: Typical Output Characteristics( 㸈)
VDS= 10V
ID = 1mA
Fig.4 Typical Transfer Characteristics
0.9
1
DRAIN-SOURCE VOLTAGE: VDS (V)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R DS(on) (ȍ)
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
1.5
5.0V
VGS= 4.5V
6
GATE THRESHOLD VOLTAGE: VGS(th) (V)
DRAIN CURRENT : ID (A)
6.0V
Fig.2: Typical Output Characteristics( 㸇)
10
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R DS(on) (ȍ)
6.5V
4
DRAIN-SOURCE VOLTAGE: VDS (V)
VDS= 10V
Pulsed
0.001
0.0
5.5V
7.0V
0
Fig.1 Maximum Safe Operating Aera
1
8.0V
6
0
DRAIN-SOURCE VOLTAGE : VDS ( V )
100
10V
8
VGS= 4.5V
100
FORWARD TRANSFER ADMITTANCE :
|Yfs| (S)
10
10
10V
Ta= 25°C
Pulsed
PW =100us
DRAIN CURRENT: ID (A)
Operation in this
area is limited
by RDS(ON)
DRAIN CURRENT: ID (A)
DRAIN CURRENT : ID (A)
100
VGS= 10V
Pulsed
0.8
ID = 11.0A
0.6
0.4
ID = 5.5A
0.2
0
-50
0
50
100
CHANNEL TEMPERATURE: Tch (°C)
Fig.8 Static Drain-Source On-State
Resistance vs. Channel Temperature
150
VDS= 10V
Pulsed
10
1
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
0.1
0.01
0.01
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.9 Forward Transfer Admittance
vs. Drain Current
3/5
R5011ANX
Transistors
10000
Cis s
10
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
1000
C rs s
Cos s
100
Ta= 25°C
f= 1MHz
VGS= 0V
10
1
0.01
0
0.5
1
Ta= 25°C
VDD = 250V
ID = 11A
R G= 10ȍ
Pulsed
10
5
0
0.1
1.5
1
10
100
1000
0
10
20
30
40
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
TOTAL GATE CHARGE : Qg (nC)
Fig.10 Reverse Drain Current vs.
Sourse-Drain Voltage
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
Fig.12 Dynamic Input Characteristics
10000
1000
Ta= 25°C
VDD = 250V
VGS= 10V
R G= 10ȍ
Pulsed
tf
SWITCHING TIME : t (ns)
REVERSE RECOVERY TIME: trr (ns)
15
GATE-SOURCE VOLTAGE : VGS (V)
VGS= 0V
Pulsed
CAPACITANCE : C (pF)
REVERSE DRAIN CURRENT : IDR (A)
100
100
Ta= 25°C
di / dt= 100A / μs
VGS= 0V
Pulsed
1000
td(off)
100
10
td(on)
tr
1
10
0.1
1
10
0.01
100
0.1
REVERSE DRAIN CURRENT : IDR (A)
1
10
100
DRAIN CURRENT : ID (A)
Fig.13 Reverse Recovery Time
vs.Reverse Drain Current
Fig.14 Switching 䇭Characteristics
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
1
0.1
Ta = 25°C
Single Pulse : 1Unit
Rth䋨ch-a䋩䋨t䋩 = 䌲䋨t䋩×Rth䋨ch-a䋩
Rth䋨ch-a䋩 = 45.8°C/W
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
4/5
50
R5011ANX
Transistors
zSwitching characteristics measurement circuit
Fig.1-1 Switching Time Measurement Circuit!
IG(Const.)
Fig.2-1 Gate Charge Measurement Circuit!
Fig.3-1 Avalanche Measurement Circuit
Fig.1-2 Switching Waveforms Fig.2-2 Gate Charge Waveform Fig.3-2 Avalanche Waveform
5/5
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0