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SST4401 / MMST4401 Transistors NPN Medium Power Transistor (Switching) SST4401 / MMST4401 zDimensions (Unit : mm) zFeatures 1) BVCEO>40V (IC=1mA) 2) Complements the SST4403 / MMST4403. SST4401 zPackage, marking, and packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) SST4401 SST3 R2X T116 3000 MMST4401 SMT3 R2X T146 3000 MMST4401 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation (1) Emitter (2) Base (3) Collector ROHM : SST3 Symbol Limits Unit VCBO VCEO 60 40 6 0.6 V V V A 0.2 W VEBO IC (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 PC 0.35 Tj Junction temperature Tstg Storage temperature ∗ Mounted on a 7 5 0.6mm CERAMIC SUBSTRATE W 150 −55 to +150 ˚C ˚C + + zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Symbol BVEBO Min. 60 40 6 ICBO − IEBO − − − − − − − − 0.4 − − 0.75 − − 0.95 − 20 − 1.2 − − 40 − − BVCBO BVCEO Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) DC current transfer ratio Transition frequency Collector output capacitance Emitter input capacitance Delay time Rise time Storage time Fall time hFE Typ. Max. − − − 0.1 0.1 80 − 100 − − 300 40 − − Unit Conditions V V IC=100µA V µA IE=100µA VCB=35V VEB=5V µA V V − IC=1mA IC/IB=150mA/15mA IC/IB=500mA/50mA IC/IB=150mA/15mA IC/IB=500mA/50mA VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE=10V, IE= −20mA, f=100MHz VCB=10V, f=100kHz fT 250 Cob Cib − − − − 6.5 MHz pF − − 30 pF VEB=0.5V, f=100kHz td − − 15 ns tr tstg tf − − 20 ns VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA − − 225 ns − − 30 ns VCC=30V, IC=150mA, IB1=-IB2=15mA VCC=30V, IC=150mA, IB1=-IB2=15mA Rev.B 1/3 SST4401 / MMST4401 Transistors zElectrical characteristic curves 100 COLLECTOR CURRENT : Ic(mA) Ta=25°C 1000 600 DC CURRENT GAIN : hFE 500 400 50 Ta=25°C VCE=10V 100 300 200 1V 100 IB=0µA 10 0.1 0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE(V) 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.3 DC current gain vs. collector current(Ι) Fig.1 Grounded emitter output characteristics COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V) 1.0 1000 Ta=25°C IC / IB=10 VCE=10V DC CURRENT GAIN : hFE 0.3 25°C 100 0.1 0 1.0 10 100 COLLECTOR CURRENT : Ic(mA) 1000 −55°C 10 0.1 Fig.2 Collector-emitter saturation voltage vs. collector current 1.0 AC CURRENT GAIN : hFE Ta=25°C VCE=10V f=1kHz 100 1.0 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.4 DC current gain vs. collector current(ΙΙ) 1000 10 0.1 10 COLLECTOR CURRENT : Ic(mA) 100 Fig.5 AC current gain vs. collector current 1000 BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V) 0.2 Ta=125°C 1.8 1.6 Ta=25°C IC / IB=10 1.2 0.8 0.4 0 1.0 10 100 COLLECTOR CURRENT : Ic(mA) 1000 Fig.6 Base-emitter saturation voltage vs. collector current Rev.B 2/3 SST4401 / MMST4401 1.6 1000 1.2 0.4 Ta=25°C VCC=30V IC / IB=10 100 100 0.8 VCC=30V 10V 10 1 10 100 COLLECTOR CURRENT : Ic(mA) 10 1.0 1000 Fig.7 Grounded emitter propagation characteristics 1000 100 Fig.8 Turn-on time vs. collector current 1000 10 100 COLLECTOR CURRENT : Ic(mA) 10 1.0 1000 100MHz 250MHz 300MHz 200MHz 10 1000 CURRENT GAIN-BANDWIDTH PRODUCT(MHz) Ta=25°C 1000 1000 Fig.9 Rise time vs. collector current Ta=25°C f=1MHz Cib Cob 10 1 0.1 1.0 10 REVERSE BIAS VOLTAGE(V) 100 Fig.12 Input / output capacitance vs. voltage Fig.11 Fall time vs. collector current Fig.10 Storage time vs. collector current 100 10 100 COLLECTOR CURRENT : Ic(mA) 10 100 COLLECTOR CURRENT : Ic(mA) 100 Ta=25°C VCC=30V IC=10IB1=10IB2 100 10 1.0 5 1.0 1000 FALL TIME : tf(ns) STORAGE TIME : ts(ns) Ta=25°C VCC=30V IC=10IB1=10IB2 10 100 COLLECTOR CURRENT : Ic(mA) CAPACITANCE(pF) 0 COLLECTOR-EMITTER VOLTAGE : VCE(V) 500 Ta=25°C IC / IB=10 RISE TIME : tr(ns) Ta=25°C VCE=10V 1.8 TURN ON TIME : ton(ns) BASE EMITTER VOLTAGE : VBE(ON)(V) Transistors Ta=25°C VCE=10V 100 1 250MHz 0.1 1 10 100 COLLECTOR CURRENT : Ic(mA) 1000 Fig.13 Gain bandwidth product 10 1.0 10 100 COLLECTOR CURRENT : Ic(mA) 1000 Fig.14 Gain bandwidth product vs. collector current Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0