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2N5195 Low voltage PNP power transistor Features ■ Low saturation voltage ■ PNP transistor Application ■ Audio, power linear and switching equipment Description 3 The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The NPN type is the 2N5192. Table 1. 2 1 SOT-32 Figure 1. Internal schematic diagram Devices summary Order code Marking Package Packaging 2N5195 2N5195 SOT-32 Tube November 2009 Doc ID 5074 Rev 4 1/9 www.st.com www.BDTIC.com/ST 9 Electrical ratings 1 2N5195 Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit VCBO Collector-base voltage (IE = 0) -80 V VCEO Collector-emitter voltage (IB = 0) -80 V VEBO Emitter-base voltage (IC = 0) -5 V Collector current -4 A Collector peak current -7 A Base current -1 A PTOT Total dissipation at Tcase = 25 °C 40 W TSTG Storage temperature -65 to 150 °C 150 °C IC ICM IB TJ Table 3. Symbol 2/9 Parameter Max. operating junction temperature Thermal data Parameter Value Unit RthJC Thermal resistance junction-case ______________Max 3.12 °C/W RthJA Thermal resistance junction-ambient ___________ Max 100 °C/W Doc ID 5074 Rev 4 www.BDTIC.com/ST 2N5195 2 Electrical characteristics Electrical characteristics Tcase = 25 °C unless otherwise specified. Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit -0.1 mA -0.1 -2 mA mA ICBO Collector cut-off current (IE = 0) VCB = 80 V ICEX Collector cut-off current (VBE = - 1.5 V) VCE = 80 V VCE = 80 V ICEO Collector cut-off current (IB = 0) VCE = 80 V -1 mA IEBO Emitter cut-off current (IC = 0) VEB = - 5 V -1 mA Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) Tc = 125 °C IC = - 100 mA -80 _ IB = - 0.15 A _ IB = - 1 A -0.6 -1.2 V V VCE = - 2 V -1.2 V VCE(sat) (1) Collector-emitter saturation voltage IC = - 1.5 A IC = - 4 A VBE(on) (1) Base-emitter on voltage IC = - 1.5 A _ DC current gain IC = - 1.5 A _ _VCE = - 2 V IC = - 4 A VCE = - 2 V 20 7 Transition frequency IC = - 1 A _ 2 hFE fT V _ VCE = - 10 V 80 MHz 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % 2.1 Electrical characteristic (curves) Figure 2. DC current gain (VCE = - 2 V) Figure 3. DC current gain (VCE = - 4 V) Doc ID 5074 Rev 4 www.BDTIC.com/ST 3/9 Electrical characteristics 4/9 2N5195 Figure 4. Collector-emitter saturation voltage Figure 5. Base-emitter saturation voltage Figure 6. Base-emitter on voltage Figure 7. Resistive load switching time (on) Figure 8. Resistive load switching time (off) Doc ID 5074 Rev 4 www.BDTIC.com/ST 2N5195 2.2 Electrical characteristics Test circuit Figure 9. Resistive load switching test circuit 1. Fast electronic switch 2. Non-inductive resistor Doc ID 5074 Rev 4 www.BDTIC.com/ST 5/9 Package mechanical data 3 2N5195 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 6/9 Doc ID 5074 Rev 4 www.BDTIC.com/ST 2N5195 Package mechanical data Doc ID 5074 Rev 4 www.BDTIC.com/ST 7/9 Revision history 4 2N5195 Revision history Table 5. 8/9 Document revision history Date Revision Changes 21-Jun-2004 3 Document migration, no content change. 02-Nov-2009 4 Updated SOT-32 package mechanical data. Doc ID 5074 Rev 4 www.BDTIC.com/ST 2N5195 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 5074 Rev 4 www.BDTIC.com/ST 9/9