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Transcript
2N5195
Low voltage PNP power transistor
Features
■
Low saturation voltage
■
PNP transistor
Application
■
Audio, power linear and switching equipment
Description
3
The device is manufactured in planar technology
with “base island” layout. The resulting transistor
shows exceptional high gain performance
coupled with very low saturation voltage. The
NPN type is the 2N5192.
Table 1.
2
1
SOT-32
Figure 1.
Internal schematic diagram
Devices summary
Order code
Marking
Package
Packaging
2N5195
2N5195
SOT-32
Tube
November 2009
Doc ID 5074 Rev 4
1/9
www.st.com
www.BDTIC.com/ST
9
Electrical ratings
1
2N5195
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Value
Unit
VCBO
Collector-base voltage (IE = 0)
-80
V
VCEO
Collector-emitter voltage (IB = 0)
-80
V
VEBO
Emitter-base voltage (IC = 0)
-5
V
Collector current
-4
A
Collector peak current
-7
A
Base current
-1
A
PTOT
Total dissipation at Tcase = 25 °C
40
W
TSTG
Storage temperature
-65 to 150
°C
150
°C
IC
ICM
IB
TJ
Table 3.
Symbol
2/9
Parameter
Max. operating junction temperature
Thermal data
Parameter
Value
Unit
RthJC
Thermal resistance junction-case ______________Max
3.12
°C/W
RthJA
Thermal resistance junction-ambient ___________ Max
100
°C/W
Doc ID 5074 Rev 4
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2N5195
2
Electrical characteristics
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-0.1
mA
-0.1
-2
mA
mA
ICBO
Collector cut-off current
(IE = 0)
VCB = 80 V
ICEX
Collector cut-off current
(VBE = - 1.5 V)
VCE = 80 V
VCE = 80 V
ICEO
Collector cut-off current
(IB = 0)
VCE = 80 V
-1
mA
IEBO
Emitter cut-off current
(IC = 0)
VEB = - 5 V
-1
mA
Collector-emitter
VCEO(sus) (1) sustaining voltage
(IB = 0)
Tc = 125 °C
IC = - 100 mA
-80
_ IB = - 0.15 A
_ IB = - 1 A
-0.6
-1.2
V
V
VCE = - 2 V
-1.2
V
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = - 1.5 A
IC = - 4 A
VBE(on) (1)
Base-emitter on voltage
IC = - 1.5 A _
DC current gain
IC = - 1.5 A _ _VCE = - 2 V
IC = - 4 A
VCE = - 2 V
20
7
Transition frequency
IC = - 1 A _
2
hFE
fT
V
_ VCE = - 10 V
80
MHz
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
2.1
Electrical characteristic (curves)
Figure 2.
DC current gain (VCE = - 2 V)
Figure 3.
DC current gain (VCE = - 4 V)
Doc ID 5074 Rev 4
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3/9
Electrical characteristics
4/9
2N5195
Figure 4.
Collector-emitter saturation
voltage
Figure 5.
Base-emitter saturation
voltage
Figure 6.
Base-emitter on voltage
Figure 7.
Resistive load switching time
(on)
Figure 8.
Resistive load switching time
(off)
Doc ID 5074 Rev 4
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2N5195
2.2
Electrical characteristics
Test circuit
Figure 9.
Resistive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
Doc ID 5074 Rev 4
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Package mechanical data
3
2N5195
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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Doc ID 5074 Rev 4
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2N5195
Package mechanical data
Doc ID 5074 Rev 4
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Revision history
4
2N5195
Revision history
Table 5.
8/9
Document revision history
Date
Revision
Changes
21-Jun-2004
3
Document migration, no content change.
02-Nov-2009
4
Updated SOT-32 package mechanical data.
Doc ID 5074 Rev 4
www.BDTIC.com/ST
2N5195
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