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SDA-5000
SDA-5000
GaAs Distributed Amplifier
GaAs DISTRIBUTED AMPLIFIER
Die: 2.2mmx1.45mmx0.102mm
Product Description
Features
RFMD’s SDA-5000 is a directly coupled (DC) GaAs microwave monolithic
integrated circuit (MMIC) distributed driver amplifier designed to support a
wide array of high frequency commercial, military, and space applications.
They are ideal for wideband amplifier gain blocks, broadband test equipment (ATE), military, and aerospace applications.
Optimum Technology
Matching® Applied
VTO 3
GaAs HBT
GaAs MESFET
IN 1
SiGe BiCMOS
Si BiCMOS
Si CMOS
7
6
NC
GaAs pHEMT
VTI

5 VCAS
SiGe HBT
DC to 35GHz Operation

+17dBm P3dB

Gain=11.8dB Typical

Noise Figure=4dB

Output Voltage to 8VPP

100mA Total Current
Applications
4 OUT
VG2 2
InGaP HBT


Instrumentation

Military

Aerospace

Broadband ATE
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Parameter
Min.
Specification
Typ.
Max.
Unit
Electrical Specifications
Operating Frequency
Gain
IP3
P1dB
P3dB
Noise Figure at Mid-Band
Input Return Loss
Output Return Loss
Supply Current
Supply Voltage
0
10.8
35
11.8
25
15
17.5
4
16
15
100
6.5
GHz
dB
dBm
dBm
dBm
dB
dB
Condition
TA=+25°C, VDD =+8VDC, VG2@=+1.5VDC,
IDD =100mA*
3dB BW
20GHz
POUT 0dBm, 20GHz
20GHz
20GHz
20GHz
mA
VDC
*Adjust VTI between -1.5VDC to +0.2VDC to achieve IDD =160mA typical., VG2 =2.75VDC
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS091021
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
1 of 8
SDA-5000
Absolute Maximum Ratings
Parameter
Rating
Unit
Drain Bias Voltage (VDD)
+8.0
VDC
Gate Bias Voltage (VTI)
-2 to +0
VDC
Gate Bias Voltage (VG2)
(VDD -8.0) VDC to VDD
V
15
dBm
Operating Junction Temperature (TJ)
+175
°C
Continuous Power Dissipation
(T=+85°C)
750
mW
Thermal Resistance (Pad to Die Bottom)
116
°C/W
Storage Temperature
-40 to +150
°C
Operating Temperature
-40 to +85
°C
RF Input Power (VDD =+8.0VDC)
ESD JESD22-A114 Human Body
Model (HBM)
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Class 0 (All Pads)
Typical Electrical Performance
S21 versus Frequency
S11 versus Frequency
0
16
-5
14
-10
12
-15
S11
(dB)
S21
(dB)
-20
10
8
-25
6
-30
4
-35
-40C
-40C
85C
85C
0
-45
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Frequency (GHz)
Frequency (GHz)
S12
(dB)
S22 versus Frequency
S12 versus Frequency
0
25C
2
25C
-40
0
-10
-5
-20
-10
-30
S22
dB
-40
-15
-20
-25
-50
-30
-60
-40C
-40C
25C
-70
25C
-35
85C
85C
-40
-80
0 2
4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Frequency (GHz)
2 of 8
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Frequency (GHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
DS091021
SDA-5000
Typical Electrical Performance
OIP3 versus Frequency
at Po=0 dBm/tone (1MHz tone spacing)
P1dB versus Frequency
18
30
16
25
14
12
P1dB
(dBm)
20
OIP3
(dB)
10
15
8
6
10
4
25C
25C
5
-40C
2
-40C
85C
85C
0
0
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Frequency (GHz)
P3dB versus Frequency
NF versus Frequency
25
16
14
20
12
P1dB
(dBm)
15
NF
(dB)
10
8
6
4
25C
5
25C
-40C
85C
2
85C
0C
0
0
0
5
10
15
20
25
Frequency (GHz)
DS091021
10
30
35
40
0
5
10
15
20
25
30
35
40
Frequency (GHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
3 of 8
SDA-5000
Package Drawing
Refer to drawing posted at www.rfmd.com for tolerances.
Notes:
1. All dimensions in millimeters
2. No connection required for unlabeled bond pads
3. Die thickness is 0.102mm (4 MIL)
4. Typical bond pad is 0.100mm square
5. Backside metallization: gold
6. Backside metal is ground
7. Bond pad metallization: gold
4 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
DS091021
SDA-5000
Pin
1
Function
RFIN
2
VG2
Description
Interface Schematic
RF Input. This pad is DC coupled and matched to 50 from DC to 35GHz. 50
microstrip transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended for RF input and output.
RFIN
VG2 is an optional pad. It may be used to bias the cascode gate of the amplifier.
If this port is used, a 1000pF bypass capacitor with the shortest wirebond length
possible is recommended to prevent low frequency gain ripple.
3
VTO
The output drain termination pad. This pad requires a suggested 1000pF bypass
capacitor with the shortest wirebond length to prevent low frequency gain ripple.
The value of the external capacitance limits the low frequency response of the
amplifier.
4
RFOUT and
VDD
RF Output. 50 microstrip transmission line on 0.127mm (5mil) thick alumina
thin film substrate is recommended for RF input and output. Connect the DC bias
(VDD) network to provide drain current (IDD).
1000 pF
Term
Resistor
10 pF
RFOUT
1000 pF
VDD
RFOUT
Note: Drain Bias (VDD) must be applied
through a broadband bias tee or
external bias network
5
6
7
Die
DS091021
VCAS
VG21
VTI
GND
Provides VG2 gate voltage to the cascode amplifier. The value is ~ (VCC/2 - absolute value of VTI).
1000 pF
Not connected.
Input gate voltage, used to bias the amplifier. The value is between -1.5VDC
(device is pinched OFF) to +0.2VDC (fully ON). This pad requires a bypass capacitor to ground with the shortest possible wirebond length to prevent low frequency
gain ripple. The value of the external capacitance limits the low frequency
response of the amplifier.
Ground connection. Connect die bottom directly to ground plane for best performance. NOTE: The die should be connected directly to the ground plane with conductive epoxy.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
1000 pF
5 of 8
SDA-5000
Assembly Diagram
1000pF
Capacitor
To GND
1000pF
Capacitor
To GND
3mil
Nominal
Gap
3
4
2
1000pF
Capacitor
To GND
RF & DC Bonds
1mil Gold Wire
1
50-Ohm
Transmission
Line
7 6
X=2200
Y=1450
5
To
VG2
Power
Supply
1000pF
Capacitor
To GND
To VTI
Power Supply
Application Circuit Schematic
1000pF
VG2
2
Vdd
3
1000pF
RFIN
1
7
6
5
4
RFOUT
1000pF
NOTE
1000pF
NOTE:
6 of 8
Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
DS091021
SDA-5000
Measurement Technique
All specifications and typical performances reported in this document were measured in the following manner. Data was taken
using a temperature controlled probe station utilizing 150μm pitch GSG probes. The interface between the probes and integrated circuit was made with a coplanar to microstrip ceramic test interface. The test interface was then wire bonded to the
die as shown in the figure below using 1mil diameter bondwires. The spacing between the test interface and the die was
200μm, and the bond wire loop height was 100μm. The thickness of the test interface is 125μm (5mil). The calibration of the
test fixture included the probes and test interfaces, so that the measurement reference plane was at the point of bond wire
attachment. Therefore, all data represents the integrated circuit and accompanying bond wires.
Ordering Information
DS091021
Part Number
Description
Delivery Method
Die/GelPak
SDA5000
GaAs Distributed Amplifier, 35GHz,
2.2mmx1.45mm Die
GelPak
10 pcs or more
SDA5000SB
GaAs Distributed Amplifier, 35GHz,
2.2mmx1.45mm Die
GelPak
2 pcs
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
7 of 8
SDA-5000
8 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
DS091021