Download ZDS020N60

ZDS020N60
Nch 600V 0.63A Power MOSFET
Datasheet
lOutline
VDSS
600V
RDS(on) (Max.)
5.0W
ID
0.63A
PD
2.0W
(8)
(7)
SOP8
(SC-87)
(6)
(5)
(1)
(2)
(3)
(4)
lFeatures
lInner circuit
1) Low on-resistance.
(1)
(2)
(3)
(4)
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
Source
Source
Source
Gate
(5)
(6)
(7)
(8)
Drain
Drain
Drain
Drain
*1 BODY DIODE
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
lApplication
Switching Power Supply
Taping
Reel size (mm)
330
Tape width (mm)
12
Type
Basic ordering unit (pcs)
Taping code
2,500
TB
Marking
ZDS020N60
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
VDSS
600
V
ID *1
0.63
A
ID,pulse *2
2.5
A
VGSS
30
V
Power dissipation (Tc = 25°C)
PD
2.0
W
Junction temperature
Tj
150
°C
Tstg
-55 to +150
°C
Drain - Source voltage
Continuous drain current
Tc = 25°C
Pulsed drain current
Gate - Source voltage
Range of storage temperature
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© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.08 - Rev.B
Data Sheet
ZDS020N60
lThermal resistance
Values
Parameter
Symbol
RthJA
Thermal resistance, junction - ambient
Unit
Min.
Typ.
Max.
-
-
62.5
°C/W
lElectrical characteristics(Ta = 25°C)
Values
Parameter
Drain - Source breakdown
voltage
Symbol
V(BR)DSS
Conditions
VGS = 0V, ID = 1mA
Unit
Min.
Typ.
Max.
600
-
-
V
100
mA
Zero gate voltage drain current
IDSS
VDS = 600V, VGS = 0V
-
Gate - Source leakage current
IGSS
VGS = 30V, VDS = 0V
-
-
100
nA
VGS (th)
VDS = 10V, ID = 1mA
2.0
-
4.0
V
-
4.4
5.0
W
Gate threshold voltage
Static drain - source
on - state resistance
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© 2012 ROHM Co., Ltd. All rights reserved.
RDS(on) *3 VGS = 10V, ID = 0.5A
2/11
2012.08 - Rev.B
Data Sheet
ZDS020N60
lElectrical characteristics(Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
0.05
0.5
-
Transconductance
gfs *3
VDS = 10V, ID = 0.5A
Input capacitance
Ciss
VGS = 0V
-
310
-
Output capacitance
Coss
VDS = 10V
-
145
-
Reverse transfer capacitance
Crss
f = 1MHz
-
40
-
VDD ⋍ 200V, VGS = 10V
-
25
-
tr *3
ID = 600mA
-
20
-
td(off) *3
RL = 333W
-
65
-
tf *3
RG = 50W
-
65
-
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on) *3
S
pF
ns
lGate Charge characteristics(Ta = 25°C)
Values
Parameter
Symbol
Total gate charge
Qg *3
Gate - Source charge
Qgs
Gate - Drain charge
Qgd *3
Gate plateau voltage
V(plateau)
*3
Conditions
Unit
Min.
Typ.
Max.
VDD ⋍ 450V
-
12
20
ID = 600mA
-
3
-
VGS = 10V
-
5
-
VDD ⋍ 450V, ID = 600mA
-
5
-
nC
V
*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
3/11
2012.08 - Rev.B
Data Sheet
ZDS020N60
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Values
Parameter
Inverse diode continuous,
forward current
Symbol
Conditions
IS *1
Unit
Min.
Typ.
Max.
-
-
0.63
A
-
-
2.5
A
-
-
1.5
V
Tc = 25°C
Inverse diode direct current,
pulsed
ISM *2
Forward voltage
VSD *3
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© 2012 ROHM Co., Ltd. All rights reserved.
VGS = 0V, IS = 1A
4/11
2012.08 - Rev.B
Data Sheet
ZDS020N60
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
10
Ta=25ºC
Single Pulse
100
PW = 100us
Drain Current : ID [A]
Power Dissipation : PD/PD max. [%]
120
80
60
40
1
PW = 1ms
0.1
Operation in this
area is limited
by RDS(on)
20
0
PW = 10ms
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
1000
10000
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [°C]
Normalized Transient Thermal Resistance : r(t)
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
10
Ta=25ºC
1
top
D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signle
0.1
0.01
0.001
0.0001
Rth(ch-a)=62.5ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
0.01
1
100
Pulse Width : PW [s]
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© 2012 ROHM Co., Ltd. All rights reserved.
5/11
2012.08 - Rev.B
Data Sheet
ZDS020N60
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(II)
Fig.4 Typical Output Characteristics(I)
0.3
2
Ta=25ºC
Pulsed
Ta=25ºC
Pulsed
0.25
VGS=6.0V
0.2
VGS=10.0V
VGS=6.0V
1.5
Drain Current : ID [A]
Drain Current : ID [A]
VGS=10.0V
VGS=5.0V
0.15
0.1
0.05
1
VGS=5.0V
0.5
VGS=4.0V
VGS=4.0V
0
0
0
0.2
0.4
0.6
0.8
0
1
2
6
8
10
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.7 Typical Transfer Characteristics
Fig.6 Breakdown Voltage
vs. Channel Temperature
800
100
VDS= 10V
VGS = 0V
ID = 1mA
750
10
700
Drain Current : ID [A]
Drain - Source Breakdown Voltage : V(BR)DSS [V]
4
650
600
550
500
1
0.1
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
0.01
450
0.001
400
-50
0
50
100
0
150
Junction Temperature : Tj [°C]
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© 2012 ROHM Co., Ltd. All rights reserved.
1
2
3
4
5
6
7
8
Gate - Source Voltage : VGS [V]
6/11
2012.08 - Rev.B
Data Sheet
ZDS020N60
lElectrical characteristic curves
Fig.8 Gate Threshold Voltage
vs. Channel Temperature
Fig.9 Transconductance vs. Drain Current
100
VDS= 10V
VDS = 10V
ID = 1mA
4.0
Transconductance : gfs [S]
Gate Threshold Voltage : VGS(th) [V]
5.0
3.0
2.0
1.0
0
25
50
75
1
100 125 150
Junction Temperature : Tj [°C]
Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1
0.01
0.01
0.0
-50 -25
10
0.1
1
10
100
Drain Current : ID [A]
Fig.10 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Static Drain - Source On-State Resistance
: RDS(on) [mW]
80
Ta=25ºC
70
60
ID = 0.3A
50
ID = 0.5A
40
30
20
10
0
0
2
4
6
8
10
Gate - Source Voltage : VGS [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
7/11
2012.08 - Rev.B
Data Sheet
ZDS020N60
lElectrical characteristic curves
Fig.12 Static Drain - Source On - State
Resistance vs. Junction Temperature
10
100
VGS= 1.0V
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
10
1
0
0.01
0.1
1
10
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.11 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Drain Current : ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
VGS = 10V
ID = 2A
9
8
7
6
5
4
3
2
1
0
-50
0
50
100
150
Junction Temperature : Tj [ºC]
8/11
2012.08 - Rev.B
Data Sheet
ZDS020N60
lElectrical characteristic curves
Fig.13 Typical Capacitance
vs. Drain - Source Voltage
Fig.14 Switching Characteristics
10000
10000
Capacitance : C [pF]
1000
Switching Time : t [ns]
Ta = 25ºC
f = 1MHz
VGS = 0V
Ciss
100
Coss
10
Ta = 25ºC
VDD = 450V
VGS = 10V
RG = 10W
1000
tf
td(off)
100
10
tr
td(on)
Crss
1
1
0.01
0.1
1
10
100
0.01
1000
0.1
Drain - Source Voltage : VDS [V]
10
Drain Current : ID [A]
Fig.15 Dynamic Input Characteristics
Fig.16 Inverse Diode Forward Current
vs. Source - Drain Voltage
10
10
Inverse Diode Forward Current : IS [A]
Gate - Source Voltage : VGS [V]
1
Ta = 25ºC
VDD = 450V
ID = 600mA
RG = 10W
5
0
0
2
4
6
8
10
12
14
1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.1
0.01
0.0
0.5
1.0
1.5
Source - Drain Voltage : VSD [V]
Total Gate Charge : Qg [nC]
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© 2012 ROHM Co., Ltd. All rights reserved.
VGS=0V
9/11
2012.08 - Rev.B
Data Sheet
ZDS020N60
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2　Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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© 2012 ROHM Co., Ltd. All rights reserved.
10/11
2012.08 - Rev.B
Data Sheet
ZDS020N60
lDimensions (Unit : mm)
e
c
L1
Lp
E
HE
SOP8
b
x
A3
S A
l1
D
A1
A2
A
b2
e
A
S
e1
y s
Patterm of terminal position areas
DIM
A
A1
A2
A3
b
c
D
E
e
HE
L1
Lp
x
y
DIM
b2
e1
l1
MILIMETERS
MIN
MAX
1.75
0.15
1.40
1.60
0.25
0.30
0.50
0.10
0.30
4.80
5.20
3.75
4.05
1.27
5.70
6.30
0.50
0.70
0.65
0.85
0.15
0.10
MILIMETERS
MIN
MAX
0.65
5.15
1.15
INCHES
MIN
-
MAX
0.069
0.006
0.055
0.063
0.01
0.012
0.004
0.189
0.148
0.02
0.012
0.205
0.159
0.05
0.224
0.02
0.026
0.248
0.028
0.033
0.006
0.004
INCHES
MIN
-
MAX
0.026
0.203
-
0.045
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
11/11
2012.08 - Rev.B
Notice
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
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examples of application circuits for the Products. ROHM does not grant you, explicitly or
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R1120A