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/ UMT1N / IMT1A EMT1FHA / EMT1 UMT1NFHA / IMT1AFRA Transistors General Purpose Transistor (Isolated Dual Transistors) AEC-Q101 Qualified EMT1 / UMT1N / IMT1A / IMT1AFRA EMT1FHA / UMT1NFHA zDimensions (Unit : mm) zFeatures 1) Two 2SA1037AKFRA 2SA1037AK chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. EMT1FHA EMT1 (6) (5) (4) (1) (2) (3) Each lead has same dimensions ROHM : EMT6 UMT1N UMT1NFHA zStructure Epitaxial planar type PNP silicon transistor (6) (5) (4) zEquivalent circuit EMT1FHA / UMT1NFHA EMT1 / UMT1N (3) (2) (1) (2) (3) IMT1AFRA IMT1A (1) (4) Tr1 Tr2 (4) (5) Abbreviated symbol : T1 (5) (6) Tr1 Tr2 (3) (6) Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 (2) Abbreviated symbol : T1 IMT1A IMT1AFRA (1) (4) (5) (6) (3) (2) (1) The following characteristics apply to both Tr1 and Tr2. zAbsolute maximum ratings (Ta = 25°C) Each lead has same dimensions Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −6 V IC −150 mA Parameter Collector current Collector EMT1FHA EMT1, ,UMT1NFHA UMT1N power IMT1AFRA IMT1A dissipation PC 150 (TOTAL) 300 (TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol : T1 ∗1 ∗2 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. Rev.C 1/3 / UMT1N / IMT1A EMT1FHA / EMT1 UMT1NFHA / IMT1AFRA Transistors zElectrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −60 − − V IC = −50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC = −1mA Emitter-base breakdown voltage BVEBO −6 − − V IE = −50µA Collector cutoff current ICBO − − −0.1 µA VCB = −60V Emitter cutoff current IEBO − − −0.1 µA VEB = −6V VCE(sat) − − −0.5 V IC/IB = −50mA/−5mA hFE 120 − 560 − VCE = −6V, IC = −1mA fT − 140 − MHz Cob − 4 5 pF Parameter Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Conditions VCE = −12V, IE = 2mA, f = 100MHz VCB = −12V, IE = 0A, f = 1MHz zPackaging specifications Package T2R TN T110 Basic ordering unit (pieces) 8000 3000 3000 − − EMT1FHA EMT1 UMT1N UMT1NFHA − IMT1A IMT1AFRA − − − zElectrical characteristic curves -10 -5 -2 -1 -0.5 -0.2 -28.0 -8 -24.5 -21.0 -6 -17.5 -14.0 -4 -10.5 -7.0 -2 -3.5µA 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 Ta = 25°C -500 -450 -400 -350 -300 -80 -60 -250 -200 -150 -40 -100 -20 -0.8 -1.2 -1.6 -50µA 500 Ta = 100°C DC CURRENT GAIN : hFE 25°C 200 100 50 -40°C 200 100 50 0 -1 -2 -3 -4 -5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( ΙΙ ) -1 Ta = 25°C -0.5 -0.2 IC/IB = 50 20 -0.1 10 -0.05 VCE = -6V -0.2 IB = 0 -2.0 Fig.2 Grounded emitter output characteristics ( Ι ) VCE = -5V -3V -1V Ta = 25°C -0.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics DC CURRENT GAIN : hFE -100 -31.5 IB = 0 BASE TO EMITTER VOLTAGE : VBE (V) 500 -35.0 Ta = 25°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -0.1 -10 VCE = −6V Ta = 100°C 25°C -20 −40°C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) -50 COLLECTOR CURRENT : IC (mA) Type Taping Code -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current ( ΙΙ ) -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι ) Rev.C 2/3 lC/lB = 10 -0.5 -0.2 Ta = 100°C 25°C -40°C -0.1 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) 1000 TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -1 Ta = 25°C VCE = -12V 500 200 100 50 0.5 1 2 5 10 20 50 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current 100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) EMT1 / UMT1N / IMT1A EMT1FHA / UMT1NFHA / IMT1AFRA Transistors 20 Ta = 25°C f = 1MHz IE = 0A IC = 0A Cib 10 Co b 5 2 -0.5 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0