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Corial 200RL Equipment Control & Software COSMA Software with: Edit menu for process recipe edition, Adjust menu for process optimizing, Maintenance menus for complete equipment control via internet with VPN (Virtual Private Network). CORS Software for: Data reprocessing (Measures and data comparison). A Tool Organized in Successive Levels Server for GUI COSMA Controller Monitoring Operator Lots Actions COSMA Supervisor Remote GUI Monitoring Process Controller Embedded control PU Monitoring Device Controllers Process Actions Embedded control function Closed-loop Physical devices Constructor PC User Diagram Modes Stand-by Mode Production Mode Optimization Mode Normal Step by step Mode Shut down Mode Errors Operator Production Constructor Mode Maintenance Constructor A Communicant Tool COSMA GUI WAN VPN ADSL Fix IP Firewall Dedicated Ethernet network Customer Ethernet Network COSMA Supervisor Ethernet Process Control Unit (1) Process Control Unit (2) Ethernet Device Control (1) Device Control (2) RIE Reactor Load-lock Electronic Control TMP Control RF Generator HT/BT Power Supplies System Reactor TV TMP Dry Pump ADP 122 Load-Lock Valve Pumping System Load-lock Gate valve for quick reactor venting and cleaning Reactor Features Reactive Ion Etching source designed to operate with a wide working pressure range (10 to 200 mT), The large cathode size enables batch etching of up to three 3” wafers or up to one Ø150 mm wafer, Shuttles for loading and to enable etching of different sizes and numbers of wafers, Helium assisted heat exchange between cathode, shuttle with mechanical clamping to maintain shuttle temperature below 50°C during etching. Loading Loading tool Shuttle Cathode Loading Loading tool Shuttle Cathode Clamping Shuttle Cathode Loading tool Cooling Shuttle Cathode Loading tool Helium Etching PLASMA Shuttle Cathode Loading tool Helium End of Etching Shuttle Cathode Loading tool Unloading Loading tool Shuttle Cathode Unloading Loading tool Shuttle Cathode ALUMINUM ETCHING Aluminum etching requirements: High etch rates and anisotropic profiles, Aluminium etch rate : 250 nm/min, After the aluminium etching phase, a passivation step avoids corrosion due to AlCl3 trapped on the side walls during aluminium etching, No damage after a week long moisture exposure test at atmospheric pressure. Process Specifications For Aluminum Etching PROCESS Etch Rate (nm/min) RIE of Al with PR mask 250 ±5% 2.5 85° to 90° RIE of Al/2%Cu with PR mask 200 ±5% 2 85° to 90° Uniformity Selectivity of Etch Rate against PR Guaranteed Process Results Profile Precise Monitoring End of etching can be monitored using a CCD camera with magnification > 120 X and a laser beam diameter ≤ 20 m. The laser spot is located with a precise XY stage on the area to etch. When the substrate is exposed the system detects automatically the change in reflectivity. Laser Endpoint Detection Laser beam Photodiode Reflected beam Photoresist Quartz When laser beam reaches the substrate, the signal level drops. This change enables automatic endpoint detection. TRIMMING Trimming Specifications: Uniformity of etching on 4” wafers ≤ ± 0,5%. Uniformity of shift in frequency on packaged devices: ≤ ± 5 KHz for a 120 KHz. Shift. Process accuracy: Low etch etch rate, Linear relationship between RF power and etch rate. QuickTime™ et un décompresseur TIFF (LZW) sont requis pour visionner cette image. Recap of Corial 200RL Features Reactive Ion Etching source which produces a uniform plasma in a wide range of working pressure (10 to 200 mT) for fast etching of Al and Al/2%Cu on up to 150 mm wafers, Helium assisted heat exchange to control shuttle temperature, Al Plasma passivation step provided with the process, Pumping system with gate valve for quick reactor maintenance, Laser endpoint with high magnification and small laser spot (25 µm) for precise process monitoring, Possibility of SAW devices trimming using a dedicated shuttle.