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Transcript
Lecture 7.0 Device Physics Electronic Devices Passive Active Components Components Resistance (real #) Reactance (Imaginary #) – Conductor – Resistor – Battery – – – – – Capacitor Inductor Diode Transistor Surge Protector Conductors Materials – Metal Interconnects • Wire Lines – W, Al, Cu • Vias –W – Gates •W Resistance, R= L/A Capacitance C=oA/d Metal Junctions Metal Interconnects • Wire Lines – W, Al, Cu • Vias –W – Gates •W Equilibration of Ef Difference in Work Functions Resistors On Chip – Low resistance • Silicon with dopants at a particular concentration – High resistance • Insulator with a specific size – Gate oxide-tunneling junction – Oxide Insulator between two conductors Circuit Board Resistors Capacitance C=oA/d =C/Co =1+e e = electric susceptibility Capacitor Allows AC signal to pass Stops DC part of signal Slow build-up of charge Timing Circuits Signal Integration Reactance Imaginary # for Resistance Capacitors in Silicon Chips On chip – SiO2 – Si3N4 On Circuit Board – BaTiO3 – (Pb,La)TiO3 Materials – SiO2 – Si3N4 – BaTiO3 – (Pb,La)TiO3 Dielectric Constant opt= (V/C)2 opt= n2 n=Refractive index Circuit Board Capacitor Ni Electrodes BaTiO3 Dielectric = 2000-3000 On Chip Capacitor (Memory Chip) An electric circuit element used to temporarily STORE a charge, consisting of TWO CONDUCTIVE plates separated and insulated from each other by a DIELECTRIC. Void Wet Gate Ox Dielectric Cell Nitride Container Cell - Combo Poly 17 Masking Level Native Oxide Top Cell Plate - Insitu Poly3 (52 Masking Level) Inductor What is it? – Coil of wire Not used on Chip On Circuit Board – Used often Reactance – (imaginary # for resistance) P-n junction One way flow of current – Diode bridge • Converts AC to DC Photo Diode Laser P-N Junction - Diode N-type P-type Ef Ef Diodes P-n junction One way flow of current – Diode bridge • Converts AC to DC Photo Diode Laser Poisson’s Equation 2U = -/( o • N side ) –n= - e Nd • P side –p=+ e Na • U=Φ = Potential (volt) Poisson Eq. d2U/dx2 = -/(o) n p g ( E ) f ( E )dE f ( E ) exp[( E f E ) / k BT ] g ( E ) Ce [ E ( E g e )]1/ 2 n p N c exp[( E f E g e ) k BT ] nn N c exp[( E f E g ) k BT ] pn N v exp[( E f ) k BT ] p p N v exp[( e E f ) k BT ] [ N N k BT ] ln[ a 2 d ] e ni P-N Junction (Diode) – no bias V Thickness of depletion layers – Nd ln = Np lp Current to equilibrate electrons from p zone to n zone due to competition of diffusion vs drift due to contact Ф. I diffusion I drift n p I drift I o C exp[( E f Eg e ) / k BT ] Diode with Applied Voltage I - Io Reverse Bias V Forward Bias P-N Junction (Diode) – with forward bias V Current to equilibrated electrons from p zone to n zone. I diffusion C exp[( E f Eg e eV ) / k BT ] I I diffusion I drift I o exp( eV / k BT ) 1 P-N Junction (Diode) – with reverse bias V Current to equilibrated electrons from p zone to n zone. I diffusion C exp[( E f Eg e eV ) / k BT ] I I diffusion I drift I o exp( eV / k BT ) 1 Diode Avalanche Breakdown Diode – equivalent circuit