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Modeling the
of the
J.Y. Vaishnav, J. Ruseckas, C. W. Clark and G. Juzeliunas
“Ultracold atom spin field
effect transistors,” J.Y.
Vaishnav, J. Ruseckas, C.
W. Clark and G.
Juzeliunas,, Phys. Rev.
Lett. 101,265302 (2008),
Twenty years ago, Purdue University scientists proposed a highly promising design for a “spin effect”
transistor – the Datta-Das transistor, or DDT. To date, however, no one has been able to build a working
model. Now JQI researchers have devised a potential solution to the problem: creating a minutely
controllable quantum model of the transistor action in a laboratory configuration -- in this case, an ultra-cold
beam of atoms manipulated by a laser array. They developed a theoretical simulation in which the DDT
electrons would be represented by a stream of ultracold atoms (neon and rubidium could work, among
others) that pass through a space, corresponding to the gate in a DDT, in which three crossed laser beams
overlap. When the atoms are struck by the first laser beam, the beam puts all the atoms in the same quantum
state -- equivalent to the identical spins of the source electrons in a DDT.