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Chapter 3
ASIC Library Design
Application-Specific Integrated Circuits
Michael John Sebastian Smith
Addison Wesley, 1997
EGRE 427 Advanced Digital Design
Figures from Application-Specific Integrated Circuits, Michael John Sebastian
Smith, Addison Wesley, 1997
ASIC Library Design

ASIC design is usually performed using a predefined and
precharacterized library of cells

In designing this library, the original designer had to optimize
speed and area without knowing the actual application that
the cells will be used for - i.e., how large a load they will be
driving



wire load
fanout load
Being aware of the source and effect of these trade-offs will
make it easier to understand how to optimally design using
the library cells
EGRE 427 Advanced Digital Design
Figures from Application-Specific Integrated Circuits, Michael John Sebastian
Smith, Addison Wesley, 1997
Model of CMOS Inverter with Parasitic
Resistances and Capacitances
Figure 3.1
A model for CMOS logic delay. (a) A CMOS inverter with load capacitance. (b) Input and output waveforms
showing the definition of falling propagation delay tPDF. (c) The switch model of the inverter showing parasitic
resistances and capacitances.
EGRE 427 Advanced Digital Design
Figures from Application-Specific Integrated Circuits, Michael John Sebastian
Smith, Addison Wesley, 1997
Effect of Load Capacitance on Inverter
Performance
Figure 3.3
Simulation of an inverter
driving a variable number of
gates on its output
EGRE 427 Advanced Digital Design
Figures from Application-Specific Integrated Circuits, Michael John Sebastian
Smith, Addison Wesley, 1997
Parasitic Capacitances of a CMOS
Transistor
Figure 3.4 Transistor parasitic
capacitance. (a) An Nchannel MOS transistor
with gate length L and
width W. (b) The
components of the gate
capacitance. (c)
Approximating
capacitances with planar
components. (d) The
components of the diffusion
capacitance. (e)-(h) The
dimensions of the gate,
overlap, and sidewall
capacitances.
EGRE 427 Advanced Digital Design
Figures from Application-Specific Integrated Circuits, Michael John Sebastian
Smith, Addison Wesley, 1997
CMOS Inverter: Steady State Response
VDD
VDD
RPon
VOH = VDD
Vout
Vout
VOL = 0
VM = f(RNon,RPon)
RNon
RNon  1/WN
Vin = V DD
EGRE 427 Advanced Digital Design
Vin = 0
RPon  1/WP
Figures
from
material provided with
DigitalCircuits,
Integrated
Circuits,
A Design
Figures
from
Application-Specific
Integrated
Michael
John
Sebastian
Perspective,
Jan Rabaey,
Smith,
Addison by
Wesley,
1997 Prentice Hall, 1996
CMOS Inverter VTC
NMOS off
PMOS lin
5
Vou t
4
NMOS sat
PMOS lin
2
3
NMOS sat
PMOS sat
1
NMOS lin
PMOS sat
1
EGRE 427 Advanced Digital Design
2
3
4
NMOS lin
PMOS off
5
Vin
Figures
from
material provided with
DigitalCircuits,
Integrated
Circuits,
A Design
Figures
from
Application-Specific
Integrated
Michael
John
Sebastian
Perspective,
Jan Rabaey,
Smith,
Addison by
Wesley,
1997 Prentice Hall, 1996
The Ideal Gate
Vout
Ri = 
Ro = 0
g= 
Vin
Vm = Vdd/2
EGRE 427 Advanced Digital Design
Figures
from
material provided with
DigitalCircuits,
Integrated
Circuits,
A Design
Figures
from
Application-Specific
Integrated
Michael
John
Sebastian
Perspective,
Jan Rabaey,
Smith,
Addison by
Wesley,
1997 Prentice Hall, 1996
Balanced CMOS Inverter
Assume that due to differences in mp and mn, for a minimum
sized transistor, Rp = 2Rn
For a balanced inverter we want RP = RN, so in this case, WP
must be 2WN
VDD
WP/LP = 2/1
Vin
Vout
CL
WN/LN = 2/1
EGRE 427 Advanced Digital Design
Figures from Application-Specific Integrated Circuits, Michael John Sebastian
Smith, Addison Wesley, 1997
Logical Effort
Figure 3.8 Logical effort. (a) The input capacitance looking into the input capacitance of a minimum size inverter. (b) Sizing a
logic cell’s transistors to have the same delay as a minimum size inverter. (c) The logical effort of a cell is C in/Cinv.
EGRE 427 Advanced Digital Design
Figures from Application-Specific Integrated Circuits, Michael John Sebastian
Smith, Addison Wesley, 1997
Logical Effort Of a Complex Gate
Figure 3.10 An AOI221 cell with logical effort vector g=(8/3, 8/3, 7/3).
EGRE 427 Advanced Digital Design
Figures from Application-Specific Integrated Circuits, Michael John Sebastian
Smith, Addison Wesley, 1997
The Basic Trade-off
to other gates (fanout)
to other gates (fanout)
Which is faster?
to other gates (fanout)
buffer
to other gates (fanout)
EGRE 427 Advanced Digital Design
Figures from Application-Specific Integrated Circuits, Michael John Sebastian
Smith, Addison Wesley, 1997