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Flexible Hybrid Electronic Systems
Ananth Dodabalapur
The University of Texas at Austin
Case I Electronic Paper
• Original Proposal
(with organic
transistor backplanes)
– 1996 (Bell Labs)
• First demonstration
– 2000/2001(Lucent/EInk)
• Commercial
prototypes
– Mid 2000
Case II - OFET based RFID
• First proposal
(organic FET based
RFID
– 1995 (Philips)
• Working prototypes
– 2005 to 2008
• Commercial
production
– Beyond 2010
Hybrid Flexible System
Design
• Communication
– Wireless, wired
• Circuit design
• Semiconductor technology
– Lumped silicon
– Thin film semiconductors
• Materials
• Insulators, conductors
• Other components and devices
– Sensors, Actuators, display elements, etc..
• Fabrication
– Roll-to-roll (RTR) or other
Thin-Film Semiconductors
• Organic and Polymer
– Easiest to print
– Proven compatibility with R2R
– Mobilities limited to near 1 cm2/V-s*
• Carbon Nanotube films
– Can possess higher mobilities (near 80 cm2/V-s) for L = 100
micron devices (Rogers et al., Nature 2008)
– Issues of metallic nanotubes
– Separation of semiconducting nanotubes yielded 0.5-0.6 cm2/Vs. (Bao et al, Science 2008)
• Inorganic Semiconductors/Nanowires
– High mobilities with Indium oxide (Marks et al., Nature Materials
2006)
Mobilities of organic FETs (Single Crystal,
Thin-film small molecule, and polymer) –
Complied from various data
Single Crystal FET Mobilities
2
-4
10
P-Channel Solution Casted
N-Channel Solution Casted
P-Channel Vacuum Deposited
N-Channel Vacuum Deposited
-5
10
-6
10
1980
1985
1990
1995
Year
2000
2005
2010
0.1
0.01
Year
2007
-3
10
1
2006
-2
10
2005
-1
10
10
2004
Mobility [cm2/Vs]
0
10
P-type
N-type
2003
TFT Mobility
2002
1
10
Mobility [cm2/Vs]
10
In2O3 FETs (Marks et al., Northwestern)
Ion assisted deposition
Mobility > 120 cm2/V-s
Room temperature
process
Fabrication methods for Flexible
Electronics
•
•
•
•
•
•
•
Ink-jet printing
Gravure
Flexo
Screen Printing
Nano-imprinting
Laser-based approaches
Photolithography for R2R
Technical Themes for the Study
• Circuit and system design
• Device physics
• Inorganic and organic semiconductor
materials for transistors
• Dielectrics and conductors
• Functional devices and materials (for
sensors etc)
• Fabrication processes
Tasks
Timetable
• Nov. 08 Kick Off meeting (All panelists meet
with sponsors and WTEC staff at NSF)
• Jan. 09 Baseline workshop at NSF (optional-this surveys US research in the field)
• Feb. 09 Site visits in Asia
• Mar. 09 Site visits in Europe (optional)
• Apr. 09 Final Workshop at NSF
• July 09 Draft Final Report goal