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Electronic engineering - Electronic devices and circuits
Electronic devices: Energy bands in
silicon, intrinsic and extrinsic silicon.
Carrier transport in silicon: diffusion
current, drift current, mobility,
resistivity. Generation and
recombination of carriers. p-n junction
diode, Zener diode, tunnel diode, BJT,
JFET, MOS capacitor, MOSFET, LED, p-in and avalanche photo diode, LASERs.
Device technology: integrated circuit
fabrication process, oxidation, diffusion,
ion implantation, photolithography, ntub, p-tub and twin-tub CMOS process.
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Electronic engineering - Electronic devices and circuits
1
Analog circuits: Equivalent circuits (large and
small-signal) of diodes, BJTs, JFETs, and
MOSFETs
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MOSFET - Circuit symbols
1
Comparison of enhancement-mode and
depletion-mode MOSFET symbols, along
with JFET symbols (drawn with source
and drain ordered such that higher
voltages appear higher on the page than
lower voltages):
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Electronic component - Transistors
1
JFET (Junction FieldEffect Transistor) – NCHANNEL or PCHANNEL
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Electronic component - Optoelectronic devices
Opto-Isolator, Opto-Coupler, PhotoCoupler – Photodiode, BJT, JFET, SCR,
TRIAC, Zero-crossing TRIAC, Open
collector IC, CMOS IC, Solid state relay
(SSR)
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Semiconductor device - Transistor
The field may be applied by a reversebiased p–n junction, forming a junction
field-effect transistor (JFET) or by an
electrode isolated from the bulk material
by an oxide layer, forming a metal–oxide–
semiconductor field-effect transistor
(MOSFET).
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Transistor
Structure: BJT, JFET, IGFET (MOSFET),
insulated-gate bipolar transistor, "other types"
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Transistor
Functionally, this makes the n-channel
JFET the solid-state equivalent of the
vacuum tube triode which, similarly, forms
a diode between its grid and cathode
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Transistor
Metal–semiconductor FETs (MESFETs)
are JFETs in which the reverse biased p–n
junction is replaced by a metal–
semiconductor junction. These, and the
HEMTs (high-electron-mobility transistors,
or HFETs), in which a two-dimensional
electron gas with very high carrier mobility
is used for charge transport, are especially
suitable for use at very high frequencies
(microwave frequencies; several GHz).
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Transistor
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Unlike bipolar transistors, FETs do not
inherently amplify a photocurrent.
Nevertheless, there are ways to use
them, especially JFETs, as lightsensitive devices, by exploiting the
photocurrents in channel–gate or
channel–body junctions.
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Transistor
Nearly all JFETs are depletion-mode
because the diode junctions would forward
bias and conduct if they were
enhancement-mode devices; most IGFETs
are enhancement-mode types.
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Transistor
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JFET, where the gate is insulated
by a reverse-biased p–n junction
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Transistor
1
MESFET, similar to
JFET with a Schottky
junction instead of a
p–n junction
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JFET
1
The junction gate field-effect transistor (JFET
or JUGFET) is the simplest type of field-effect
transistor. It can be used as an electronicallycontrolled switch or as a voltage-controlled
resistance. Electric charge flows through a
semiconducting channel between "source"
and "drain" terminals. By applying a reverse
bias voltage to a "gate" terminal, the channel
is "pinched", so that the electric current is
impeded or switched off completely.
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JFET - Structure
1
The JFET is a long channel of semiconductor
material, doped to contain an abundance of
positive charge carriers or holes (p-type), or
of negative carriers or electrons (n-type).
Ohmic contacts at each end form the source
(S) and drain (D). A pn-junction is formed on
one or both sides of the channel, or
surrounding it, using a region with doping
opposite to that of the channel, and biased
using an ohmic gate contact (G).
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JFET - Function
JFET operation is like that of a garden
hose. The flow of water through a hose
can be controlled by squeezing it to
reduce the cross section; the flow of
electric charge through a JFET is
controlled by constricting the currentcarrying channel. The current also
depends on the electric field between
source and drain (analogous to the
difference in pressure on either end of the
hose).
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JFET - Function
1
Some JFET devices
are symmetrical
with respect to the
source and drain.
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JFET - Schematic symbols
1
The JFET gate is sometimes drawn in the
middle of the channel (instead of at the
drain or source electrode as in these
examples). This symmetry suggests that
"drain" and "source" are interchangeable,
so the symbol should be used only for
those JFETs where they are indeed
interchangeable.
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JFET - Comparison with other transistors
1
At room temperature, JFET gate current (the
reverse leakage of the gate-to-channel
junction) is comparable to that of a MOSFET
(which has insulating oxide between gate and
channel), but much less than the base
current of a bipolar junction transistor. The
JFET has higher transconductance than the
MOSFET, as well as lower flicker noise, and
is therefore used in some low-noise, high
input-impedance op-amps.
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JFET - History of the JFET
1
The first practical JFETs were made
many years later, in spite of their
conception long before the junction
transistor
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JFET - Mathematical model
1
The current in N-JFET due
to a small voltage VDS is
given by:
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Diode - Types of semiconductor diode
1
These are actually JFETs with the gate
shorted to the source, and function like
a two-terminal current-limiter analog to
the Zener diode, which is limiting
voltage. They allow a current through
them to rise to a certain value, and then
level off at a specific value. Also called
CLDs, constant-current diodes, diodeconnected transistors, or currentregulating diodes.
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Electronic symbol - Reference designations
1
JFET: Junction gate
field-effect transistor
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Electronic symbol - Transistors
n-channel junction gate
field-effect transistor (JFET)
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Electronic symbol - Transistors
1
p-channel junction gate
field-effect transistor
(JFET)
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Field-effect transistor - History,
1
The field-effect transistor was first patented
by Julius Edgar Lilienfeld in 1926 and by
Oskar Heil in 1934, but practical
semiconducting devices (the JFET) were
developed only much later after the transistor
effect was observed and explained by the
team of William Shockley at Bell Labs in
1947. The MOSFET, which largely
superseded the JFET and had a more
profound effect on electronic development,
was invented by Dawon Kahng and Martin
Atalla in 1960.
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Field-effect transistor - Types of field-effect transistors
1
The JFET (junction field-effect transistor)
uses a reverse biased p–n junction to
separate the gate from the body.
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Field-effect transistor - Types of field-effect transistors
1
The MESFET (metal–semiconductor
field-effect transistor) substitutes the
p–n junction of the JFET with a
Schottky barrier; and is used in GaAs
and other III-V semiconductor
materials.
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Silicon carbide - Power electronic devices
In 2008, the first commercial JFETs
rated at 1200 V were introduced to the
market, followed in 2011 by the first
commercial MOSFETs rated at 1200 V
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MOSFET - Circuit symbols
1
Comparison of enhancement-mode and
depletion-mode MOSFET symbols, along
with JFET symbols (drawn with source
and drain ordered such that higher
voltages appear higher on the page than
lower
voltages):[http://www.circuitstoday.com/el
ectronic-circuit-symbols Electronic Circuit
Symbols]IEEE
315[http://highered.mcgrawhill.com/sites/dl/free/0073191639/366537/C
hapter_4.pdf#page=19 Microelectronic
Circuit Design], Jaeger, Blalock - Figure
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Schottky barrier - Devices
A MESFET, or metal–semiconductor
field effect transistor|FET uses a
reverse biased Schottky barrier to
provide a depletion region that pinches
off a conducting channel buried inside
the semiconductor (similar to the JFET
where instead a p–n junction provides
the depletion region). A variant of this
device is the high-electron-mobility
transistor (HEMT), which also utilizes a
heterojunction to provide a device with
extremely high conductance.
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Triode - Operation
1
The triode is very similar in operation
to the n-channel JFET; it is normally
on, and progressively switched off as
the grid/gate is pulled increasingly
negative of the source/cathode.
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Threshold voltage
1
The threshold voltage of a JFET|junction
field-effect transistor is often called
'pinch-off voltage' instead, which is
somewhat confusing since pinch off for
an MOSFET|insulated-gate field-effect
transistor is used to refer to the channel
length modulation|channel pinching
that leads to current saturation
behaviour under high source–drain bias,
even though the current is never off. The
term threshold voltage is unambiguous
and refers to the same concept in any
field-effect transistor.
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Vacuum tube - Description
The solid-state device which operates
most like the pentode tube is the junction
field-effect transistor (JFET), although
vacuum tubes typically operate at over a
hundred volts, unlike most semiconductors
in most applications.
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Electronic component - Transistors
**JFET (Junction FieldEffect Transistor) – NCHANNEL or P-CHANNEL
1
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Electronic component - Optoelectronic devices
1
** Opto-isolator|Opto-Isolator, OptoCoupler, Photo-Coupler – Photodiode,
BJT, JFET, SCR, TRIAC, Zero-crossing
TRIAC, Open collector IC, CMOS IC,
Solid state relay (SSR)
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Constant current diode
'Constant-current diode' (also called
'CLD', 'current-limiting diode', 'diodeconnected transistor' or 'CRD', 'currentregulating diode') consists of a JFET with
the gate shorted to the source, and it
functions like a two-terminal current limiter
or current source (analogous to a voltagelimiting Zener diode)
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SPICE - Device models
1
SPICE2 included many semiconductor device
transistor models|compact models: three
levels of MOSFET model, a combined EbersMoll model|Ebers–Moll and Gummel–Poon
model|Gummel-Poon bipolar model, a JFET
model, and a model for a diode|junction
diode. In addition, it had many other
elements: resistors, capacitors, inductors
(including Inductance#Coupled
inductors|coupling), independent voltage
source|voltage and current sources, ideal
transmission lines, and voltage and current
controlled sources.
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Education and training of electrical and electronics engineers - Electronic devices and
circuits
'Electronic Devices': Energy bands in
silicon, intrinsic and extrinsic silicon.
Carrier transport in silicon: diffusion
current, drift current, mobility, resistivity.
Generation and recombination of carriers.
p-n junction diode, Zener diode, tunnel
diode, BJT, JFET, MOS capacitor,
MOSFET, LED, p-I-n and avalanche photo
diode, LASERs. Device technology:
integrated circuits fabrication process,
oxidation, diffusion, ion implantation,
photolithography, n-tub, p-tub and twintub CMOS process.
1
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Education and training of electrical and electronics engineers - Electronic devices and
circuits
1
'Analog Circuits': Equivalent circuits (large
and small-signal) of diodes, BJTs, JFETs, and
MOSFETs
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Electronics engineering - Electronic devices and circuits
p-n junction diode, Zener diode,
tunnel diode, BJT, JFET, MOS
capacitor, MOSFET, LED, p-i-n
diode|p-i-n and avalanche photodiode|avalanche photo diode, LASERs
1
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Regenerative circuit - Advantages and disadvantages
Intrinsically, there is little or no
difference in the gain and stability
available from vacuum tubes, JFET's,
MOSFET's or bipolar junction
transistors (BJT's).
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Channel (transistors) - Types of field-effect transistors
* The 'JFET' (junction field-effect
transistor) uses a reverse biased p–n
junction to separate the gate from the
body.
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Channel (transistors) - Types of field-effect transistors
1
* The 'MESFET' (metal–semiconductor
field-effect transistor) substitutes the p–n
junction of the JFET with a Schottky
barrier; and is used in GaAs and other IIIV semiconductor materials.
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Quite Universal Circuit Simulator - Components
1
There is also a Component library that
includes various standard components
available in the market (bridges, diodes,
varistors, LEDs, JFETs, MOSFETS, and
so on).
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Overclocking - Cooling
1
Moreover, silicon-based junction gate
field-effect transistors (JFET) will
degrade below temperatures of
roughly and eventually cease to
function or freeze out at since the
silicon ceases to be semiconducting
so using extremely cold coolants may
cause devices to fail.
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Hartley oscillator - Operation
The most simple of implementations
shown here uses nothing but a Junction
FET|JFET (in Common-drain
configuration) and the LC tank circuit (here
the single winding is tapped), plus a single
battery; it will work, but probably with high
distortion and high current drain (that
could be improved by adding resistance
between the source and the coil tap), and
serves as an uncomplicated illustration of
the Hartley oscillator operation:
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Hartley oscillator - Operation
* the output from the JFET's source
(emitter, if a Bipolar Junction
Transistor|BJT had been used;
cathode for a triode) has the same
phase as the signal at its gate (or base)
- and roughly the same voltage as its
input (which is the voltage across the
entire tank circuit), but the current is
amplified, i.e. it is acting as a Buffer
amplifier#Current buffer|current
1
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P-type semiconductor - Use of extrinsic semiconductors
Field-effect transistors (FET) are
another type of transistor implementing
extrinsic semiconductors. As opposed
to BJTs, they are unipolar and
considered either N-channel or Pchannel. FETs are broken into two
families, JFET|junction gate FET (JFET)
and insulated gate FET
(MOSFET|IGFET).
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Metal oxide semiconductor field effect transistor - Circuit symbols
1
Comparison of enhancement-mode and depletionmode MOSFET symbols, along with JFET symbols
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Gilbert cell - Function
1
A functionally equivalent circuit may be
constructed using field-effect
transistors (JFET, MOSFET) or
Thermionic valve|vacuum tubes.
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Low-noise amplifier
For low noise, the amplifier needs to
have a high amplification in its first
stage. Therefore Junction Field-Effect
Transistor|JFETs and High Electron
Mobility Transistor|HEMTs are often
used. They are driven in a high-current
regime, which is not energy-efficient,
but reduces the relative amount of shot
noise. Input and output Impedance
matching|matching circuits for narrowband circuits enhance the gain (see
Gain-bandwidth product).
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Ngspice - Status of Ngspice simulator
1
Ngspice implements various circuits
elements, like resistors, capacitors,
inductors (single or mutual),
transmission lines and a growing
number of semiconductor devices like
diodes, bipolar transistors, mosfets
(both bulk and SOI), mesfets, jfet and
HFET.
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Transistors - Field-effect transistor (FET)
1
Metal–semiconductor FETs (MESFETs)
are JFETs in which the Reversebiased|reverse biased p–n junction is
replaced by a metal–semiconductor
junction. These, and the HEMTs (highelectron-mobility transistors, or HFETs), in
which a two-dimensional electron gas with
very high carrier mobility is used for
charge transport, are especially suitable
for use at very high frequencies
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Transistors - Field-effect transistor (FET)
1
Nearly all JFETs are depletion-mode
because the diode junctions would
forward bias and conduct if they were
enhancement-mode devices;
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Transistors - Other transistor types
1
**JFET, where the gate is
insulated by a reversebiased p–n junction
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Transistors - Other transistor types
1
**MESFET, similar to JFET with
a Schottky junction instead of a
p–n junction
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List of computing and IT abbreviations - J
1
* JFET—Junction Field-Effect
Transistor
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AESA - Basic concept
1
The introduction of JFETs and MESFETs did the
same to the transmitter side of the systems as well
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Current source - Current-stable nonlinear implementation
1
A JFET can be made to act as a current
source by tying its gate to its source.
The current then flowing is the IDSS of
the FET. These can be purchased with
this connection already made and in
this case the devices are called
constant current diode|current
regulator diodes or constant current
diodes or current limiting diodes (CLD).
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Current source - Constant current diode
1
The simplest constant-current source or
sink is formed from one component: a
JFET with its gate attached to its source.
Once the drain-source voltage reaches a
certain minimum value, the JFET enters
saturation where current is approximately
constant. This configuration is known as a
constant-current diode, as it behaves
much like a dual to the constant voltage
diode (Zener diode) used in simple voltage
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Current source - Constant current diode
Due to the large variability in
saturation current of JFETs, it is
common to also include a source
resistor (shown in the image to the
right) which allows the current to be
tuned down to a desired value.
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MESFET
1
MESFETs are usually constructed in
compound semiconductor
technologies lacking high quality
surface passivation such as gallium
arsenide|GaAs, indium
phosphide|InP, or Silicon
carbide|SiC, and are faster but more
expensive than silicon-based JFETs or
MOSFETs
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List of ISO 639-3 language codes reserved for local use - qa–
nowrap|Standard ISO
equivalentsanchor|qbbanchor|qbeEthnolink|tehanchor|qbfEthnolink|yzkanchor|qbhanchor|qbjanchor|qbnanchor|qbpanchor|qbtanchor|qbxEthnolink|chtanchor|qbyEthnolin
k|bkcEthnolink|gdinowrap|Standard ISO
equivalentsanchor|qcbEthnolink|mbjanchor|qccEthnolink|yabanchor|qcdanchor|qceanchor|qchanchor|qcianchor|qcmEthnolink|liaEthnolink|lmaanchor|qcoEthnolink|xinanc
hor|qcsanchor|qctanchor|qcuanchor|qcvanchor|qcxanchor|qcyEthnolink|akknowrap|Standard ISO
equivalentsanchor|qdaEthnolink|xinanchor|qdcEthnolink|stcEthnolink|ntuEthnolink|nlzanchor|qdhanchor|qdiEthnolink|sabanchor|qdjanchor|qdkEthnolink|ygpanchor|qdlanc
hor|qdsanchor|qdtEthnolink|emsanchor|qduEthnolink|mufanchor|qdvEthnolink|wauEthnolink|mmhanchor|qdwEthnolink|yuknowrap|Standard ISO
equivalentsanchor|qeaanchor|qebanchor|qeeEthnolink|lenanchor|qefanchor|qeiEthnolink|todanchor|qepanchor|qeqanchor|qerEthnolink|dlcanchor|qesanchor|qetanchor|q
eyEthnolink|oaranchor|qezEthnolink|xpknowrap|Standard ISO
equivalentsanchor|qfcEthnolink|tnbanchor|qfdanchor|qfeEthnolink|kxoanchor|qffanchor|qfganchor|qfianchor|qfjEthnolink|mjganchor|qfkanchor|qfqanchor|qfrEthnolink|gqia
nchor|qfsanchor|qfuanchor|qfxEthnolink|pglEthnolink|sgaanchor|qfyEthnolink|kuianchor|qfznowrap|Standard ISO
equivalentsanchor|qgbanchor|qgdEthnolink|ccganchor|qgeanchor|qgganchor|qghEthnolink|nctanchor|qgjEthnolink|lenanchor|qgkEthnolink|grcanchor|qglanchor|qgnEthnol
ink|hnhanchor|qgpEthnolink|jupanchor|qgqEthnolink|crbanchor|qguanchor|qgvanchor|qgyEthnolink|mbjanchor|qgznowrap|Standard ISO
equivalentsanchor|qhaEthnolink|gdbanchor|qhcEthnolink|pwianchor|qhdEthnolink|spaanchor|qhfEthnolink|bwiEthnolink|kpcanchor|qhianchor|qhjanchor|qhkEthnolink|xupa
nchor|qhmEthnolink|kjpanchor|qhoanchor|qhpEthnolink|ayranchor|qhqEthnolink|xinanchor|qhrEthnolink|spxanchor|qhynowrap|Standard ISO
equivalentsanchor|qicanchor|qijanchor|qilanchor|qinEthnolink|abianchor|qiqEthnolink|yukanchor|qirEthnolink|spcEthnolink|atxanchor|qivEthnolink|nmynowrap|Standard
ISO
equivalentsanchor|qjaanchor|qjbanchor|qjfEthnolink|wnwanchor|qjganchor|qjhanchor|qjianchor|qjjEthnolink|xqaanchor|qjlanchor|qjmanchor|qjnanchor|qjpEthnolink|cnganc
hor|qjqanchor|qjtEthnolink|emyanchor|qjvEthnolink|alzanchor|qjwanchor|qjxEthnolink|yddanchor|qjzEthnolink|kpjnowrap|Standard ISO
equivalentsanchor|qkaEthnolink|bmqanchor|qkdEthnolink|cabanchor|qknanchor|qkranchor|qktEthnolink|obianchor|qkwEthnolink|xodanchor|qkyanchor|qkzEthnolink|xluEth
nolink|hlunowrap|Standard ISO
equivalentsanchor|qlbanchor|qlcEthnolink|kskEthnolink|osaanchor|qlfanchor|qljEthnolink|pabanchor|qlqEthnolink|aiwanchor|qlvanchor|qlwEthnolink|cngEthnolink|qxsanch
or|qlyanchor|qlznowrap|Standard ISO
equivalentsanchor|qmaEthnolink|omcanchor|qmbEthnolink|esuanchor|qmcEthnolink|veoanchor|qmiEthnolink|kwlanchor|qmkEthnolink|mzjanchor|qmlEthnolink|mlqanchor|
qmmEthnolink|gymanchor|qmoEthnolink|inzanchor|qmuEthnolink|mbjanchor|qmvanchor|qmxanchor|qmyEthnolink|crhnowrap|Standard ISO
equivalentsanchor|qnaEthnolink|kgxanchor|qnbEthnolink|btaanchor|qneanchor|qnianchor|qnjanchor|qnkEthnolink|sananchor|qnnEthnolink|lenanchor|qnpanchor|qnynowr
ap|Standard ISO
equivalentsanchor|qoaanchor|qobanchor|qoianchor|qojanchor|qokanchor|qopEthnolink|cnganchor|qotEthnolink|umaEthnolink|waaEthnolink|yakEthnolink|tqnanchor|qouEt
hnolink|tnbanchor|qowEthnolink|crzanchor|qoxanchor|qozEthnolink|akknowrap|Standard ISO
equivalentsanchor|qpaEthnolink|cbvanchor|qpbanchor|qpcEthnolink|tcfEthnolink|tpcEthnolink|tplEthnolink|tpxanchor|qpeEthnolink|wnwanchor|qpganchor|qpjanchor|qpkEt
hnolink|bstanchor|qplanchor|qpmEthnolink|gylanchor|qppanchor|qpranchor|qpxEthnolink|bdeanchor|qpzEthnolink|kwanowrap|Standard ISO
equivalentsanchor|qqaEthnolink|pilanchor|qqcanchor|qqdEthnolink|baeanchor|qqhEthnolink|xwaanchor|qqjEthnolink|ycnanchor|qqkEthnolink|inpanchor|qqlanchor|qqrEthn
olink|nitanchor|qqvanchor|qqxanchor|qqznowrap|Standard ISO
equivalentsanchor|qrcanchor|qreEthnolink|gaeanchor|qriEthnolink|lenanchor|qrjanchor|qroEthnolink|ayoanchor|qrpanchor|qrrEthnolink|tbnanchor|qrsanchor|qrvanchor|qrx
anchor|qrznowrap|Standard ISO
equivalentsanchor|qsbanchor|qsdEthnolink|xinanchor|qseanchor|qsgEthnolink|orcanchor|qsianchor|qskEthnolink|emkanchor|qsmanchor|qssEthnolink|pwianchor|qstEthno
link|papanchor|qsuEthnolink|lenanchor|qswanchor|qsxanchor|qszEthnolink|nysnowrap|Standard ISO
equivalentsanchor|qtaEthnolink|mrsanchor|qtbEthnolink|txganchor|qtdanchor|qthEthnolink|baeanchor|qtiEthnolink|loranchor|qtjanchor|qtkEthnolink|dgsanchor|qtlanchor|qt
mEthnolink|cnganchor|qtoEthnolink|emkanchor|qtpanchor|qtvEthnolink|bwiEthnolink|kpcanchor|qtwanchor|qtxEthnolink|ccbanchor|qtyEthnolink|suyanchor|qtzEthnolink|rm
nReflist
1
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Nikon D2H
1
The 'Nikon D2H' is a professional-grade
digital single-lens reflex camera
introduced by Nikon Corporation on July
22, 2003. It uses Nikon's own JFETLBCAST sensor with a 4.1 megapixel
resolution, and is optimised for sports
and action shooting that require a high
frame rate. In 2005, the D2H was replaced
by the D2Hs, which added new features
derived from the 12 megapixel Nikon
D2X|D2X digital SLR. The D2Hs was
discontinued after the introduction of the
Nikon D300|D300 and Nikon D3|D3
models.
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Flicker noise
1
Flicker noise is often characterized by
the corner frequency fc between the
region dominated by the lowfrequency flicker noise and the higher
frequency flat-band noise. MOSFETs
have a higher fc (can be in the GHz
range) than JFETs or bipolar
transistors, which is usually below 2
kHz for the latter.
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Power semiconductor device - Wide band-gap semiconductors
1
A SiC Schottky diode with a breakdown
voltage of 1200V is commercially
available, as is a 1200V JFET
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Tube sound - Tube sound from transistor amplifiers
1
In 1982, Tom Scholz, a graduate of
MIT and a member of Boston
(band)|Boston, introduced the
Rockman (music)|Rockman, which
used JFET/BJT-based operational
amplifiers and diode-based clipping
circuits, but achieved a distorted
sound adopted by many well known
musicians. Advanced digital signal
processing offers the possibility to
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Trigate transistors - Flexfet
'Flexfet' is a planar, independently
double-gated transistor with a Copper
interconnect|damascene metal top gate
MOSFET and an implanted JFET
bottom gate that are self-aligned in a
gate trench
1
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Discrete transistor - Types
1
* Structure: Bipolar junction transistor|BJT,
JFET, IGFET (MOSFET), insulated-gate
bipolar transistor, other types
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Discrete transistor - Other transistor types
** JFET, where the gate is
insulated by a reverse-biased p–
n junction
1
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Discrete transistor - Other transistor types
1
** MESFET, similar to JFET with a Schottky
junction instead of a p–n junction
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