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IRF640, RF1S640SM
Data Sheet
18A, 200V, 0.180 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17422.
Ordering Information
PART NUMBER
PACKAGE
June 1999
File Number
1585.5
Features
• 18A, 200V
• rDS(ON) = 0.180Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speed
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
BRAND
IRF640
TO-220AB
IRF640
RF1S640SM
TO-263AB
RF1S640
D
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S640SM9A.
S
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN (FLANGE)
4-208
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
IRF640, RF1S640SM
TC = 25oC, Unless Otherwise Specified
Absolute Maximum Ratings
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
IRF640, RF1S640SM
200
200
18
11
72
±20
125
1.0
580
-55 to 150
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V, (Figure 10)
200
-
-
Gate Threshold Voltage
VGS(TH)
VGS = VDS , ID = 250µA
2
-
4
V
VDS = Rated BVDSS , VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC
-
-
250
µA
VDS > ID(ON) x rDS(ON)MAX , VGS = 10V (Figure 7)
18
-
-
A
-
-
±100
nA
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current (Note 1)
ID(ON)
Gate to Source Leakage Current
IGSS
Drain to Source On Resistance (Note 1)
Forward Transconductance (Note 1)
Turn-On Delay Time
rDS(ON)
gfs
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
VGS = ±20V
-
0.14
0.18
Ω
6.7
10
-
S
-
13
21
ns
-
50
77
ns
-
46
68
ns
-
35
54
ns
VGS = 10V, ID ≈ 18A, VDS = 0.8 x Rated BVDSS
(Figure 14) Gate Charge is Essentially Independent
of Operating Temperature
IG(REF) = 1.5mA
-
43
64
nC
-
8
-
nC
-
22
-
nC
VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)
-
1275
-
pF
ID = 10A, VGS = 10V (Figures 8, 9)
VDS ≥ 10V, ID = 11A (Figure 12)
VDD = 100V, ID ≈ 18A, RGS = 9.1Ω, RL = 5.4Ω,
MOSFET Switching Times are Essentially
Independent of Operating Temperature
tf
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Qg(TOT)
Qgs
Gate to Drain “Miller” Charge
Qgd
Input Capacitance
CISS
Output Capacitance
COSS
-
400
-
pF
Reverse Transfer Capacitance
CRSS
-
100
-
pF
-
3.5
-
nH
-
4.5
-
nH
-
7.5
-
nH
-
-
1
oC/W
Internal Drain Inductance
LD
Measured From the
Contact Screw on Tab to
Center of Die
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
Internal Source Inductance
LS
Measured From the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
LD
G
LS
S
Thermal Resistance Junction to Case
RθJC
Thermal Resistance Junction to
Ambient
RθJA
Free Air Operation, IRF640
-
-
62
oC/W
RθJA
RF1S640SM Mounted on FR-4 Board with
Minimum Mounting Pad
-
-
62
oC/W
4-209
IRF640, RF1S640SM
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Continuous Source to Drain Current
ISD
Pulse Source to Drain Current
(Note 2)
ISDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
D
MIN
TYP
MAX
UNITS
-
-
18
A
-
-
72
A
-
-
2.0
V
120
240
530
ns
1.3
2.8
5.6
µC
G
S
Source to Drain Diode Voltage (Note 2)
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
QRR
TJ = 25oC, ISD = 18A, VGS = 0V, (Figure 13)
TJ = 25oC, ISD = 18A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 18A, dISD/dt = 100A/µs
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 3.37mH, RG = 25Ω, peak IAS = 18A.
Typical Performance Curves
Unless Otherwise Specified
20
ID, DRAIN CURRENT (A)
1.0
0.8
0.6
0.4
16
12
8
4
0.2
0
0
0
50
100
25
150
50
TC, CASE TEMPERATURE (oC)
75
100
150
125
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
ZθJC , TRANSIENT
THERMAL IMPEDANCE (oC/W)
POWER DISSIPATION MULTIPLIER
1.2
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
0.001
10-5
PDM
t1
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
tP, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-210
1
10
IRF640, RF1S640SM
Typical Performance Curves
1000
Unless Otherwise Specified (Continued)
30
OPERATION IN THIS AREA MAY BE
LIMITED BY rDS(ON)
10µs
100µs
10
1ms
10ms
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
1
1
24
ID , DRAIN CURRENT (A)
ID , DRAIN CURRENT (A)
TC = 25oC
100
7V
18
12
6V
6
DC
5V
4V
0
0
1000
10
100
VDS , DRAIN TO SOURCE VOLTAGE (V)
VGS = 7V
18
VGS = 6V
12
VGS = 5V
VGS = 4V
0
0
1.0
2.0
3.0
4.0
5.0
25oC
1
0.1
2
4
6
8
VGS , GATE TO SOURCE VOLTAGE (V)
0
0.9
0.6
VGS= 10V
VGS = 20V
0
30
45
60
75
ID , DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
4-211
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
rDS(ON) , DRAIN TO SOURCE
ON RESISTANCE (Ω)
3.0
1.2
15
10
FIGURE 7. TRANSFER CHARACTERISTICS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
60
150oC
FIGURE 6. SATURATION CHARACTERISTICS
0.3
48
10
VDS , DRAIN TO SOURCE VOLTAGE (V)
1.5
36
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≥ 50V
VGS = 10V
ID , DRAIN CURRENT (A)
ID , DRAIN CURRENT (A)
100
24
6
24
FIGURE 5. OUTPUT CHARACTERISTICS
VGS = 8V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
12
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10V
8V
2.4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 18A
1.8
1.2
0.6
0
-60 -40
-20
0
20
40
60
80
100 120 140 160
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
IRF640, RF1S640SM
Typical Performance Curves
Unless Otherwise Specified (Continued)
3000
1.25
VGS = 0V, f = 1MHz
1.15
1.05
0.95
0.85
1800
CISS
1200
COSS
600
CRSS
0.75
-60
-40
-20
0
20
40
80
60
0
100 120 140 160
10
1
TJ , JUNCTION TEMPERATURE (oC)
15
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
1000
ISD , SOURCE TO DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
12
25oC
9
150oC
6
3
0
0
6
12
18
24
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
150oC
100
25oC
10
1
30
0.4
0.8
1.2
1.6
VSD , SOURCE TO DRAIN VOLTAGE (V)
0
ID , DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
VGS , GATE TO SOURCE VOLTAGE (V)
20
ID = 28A
VDS = 40V
16
VDS = 100V
12
VDS = 160V
8
4
0
0
15
30
45
60
75
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-212
100
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
gfs , TRANSCONDUCTANCE (S)
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
2400
C, CAPACITANCE (pF)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
ID = 250µA
2.0
IRF640, RF1S640SM
Test Circuits and Waveforms
VDS
BVDSS
L
tP
VARY tP TO OBTAIN
+
RG
REQUIRED PEAK IAS
VDS
IAS
VDD
VDD
-
VGS
DUT
tP
0V
IAS
0
0.01Ω
tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON
tOFF
td(ON)
td(OFF)
tf
tr
RL
VDS
90%
90%
+
RG
-
VDD
10%
10%
0
DUT
90%
VGS
VGS
0
FIGURE 17. SWITCHING TIME TEST CIRCUIT
0.2µF
50%
PULSE WIDTH
10%
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
VDS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
12V
BATTERY
50%
VDD
Qg(TOT)
SAME TYPE
AS DUT
50kΩ
Qgd
0.3µF
VGS
Qgs
D
VDS
DUT
G
0
IG(REF)
S
0
IG CURRENT
SAMPLING
RESISTOR
VDS
ID CURRENT
SAMPLING
RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT
4-213
IG(REF)
0
FIGURE 20. GATE CHARGE WAVEFORMS
IRF640, RF1S640SM
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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