Download 2SK1056, 2SK1057, 2SK1058

2SK1056, 2SK1057, 2SK1058
Silicon N-Channel MOS FET
November 1996
Application
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
•
•
•
•
•
•
•
Good frequency characteristic
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Suitable for audio power amplifier
Outline
TO-3P
D
1
G
2
S
3
1. Gate
2. Source
(Flange)
3. Drain
2SK1056, 2SK1057, 2SK1058
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1056
Symbol
Ratings
Unit
VDSX
120
V
2SK1057
140
2SK1058
160
Gate to source voltage
VGSS
±15
V
Drain current
ID
7
A
Body to drain diode reverse drain current
IDR
7
A
100
W
1
Channel dissipation
Pch*
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. Value at TC = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
breakdown voltage
2SK1056 V(BR)DSX
120
2SK1057
140
2SK1058
160
Typ
Max
Unit
Test conditions
—
—
V
ID = 10 mA, VGS = –10 V
Gate to source breakdown
voltage
V(BR)GSS
±15
—
—
V
IG = ±100 µA, VDS = 0
Gate to source cutoff voltage
VGS(off)
0.15
—
1.45
V
ID = 100 mA, VDS = 10 V
Drain to source saturation
voltage
VDS(sat)
—
—
12
V
ID = 7 A, VGD = 0 *
Forward transfer admittance
|yfs|
0.7
1.0
1.4
S
ID = 3 A, VDS = 10 V *
Input capacitance
Ciss
—
600
—
pF
VGS = –5 V, VDS = 10 V,
f = 1 MHz
Output capacitance
Coss
—
350
—
pF
Reverse transfer capacitance
Crss
—
10
—
pF
Turn-on time
ton
—
180
—
ns
Turn-off time
toff
—
60
—
ns
Note
2
1. Pulse test
1
VDD = 20 V, ID = 4 A,
1
2SK1056, 2SK1057, 2SK1058
Maximum Safe Operation Area
Power vs. Temperature Derating
20
Ta = 25°C
10
Drain Current ID (A)
ID max (Continuous)
P PW
5
PW W = = 1
10 0 m
=
0 s
1
m 1
s
s sh
1
2
1 ot
sh
sh
ot
ot
1.0
n
tio
ra
pe
O
(T C
=
)
°C
25
50
C
100
D
0.5
2SK1056
0
50
100
Case Temperature TC (°C)
0.2
5
150
Typical Output Characteristics
10
20
50 100 200
500
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
1.0
TC = 25°C
0.8
7
6
6
5
4
4
Pch =
3
2
100 W
VDS = 10 V
T
C=
Drain Current ID (A)
VGS = 10 V
9
8
8
Drain Current ID (A)
2SK1057
2SK1058
–2
5°C
25
75
Channel Dissipation Pch (W)
150
0.6
0.4
0.2
2
1
0
0
10
20
30
40
50
Drain to Source Voltage VDS (V)
0
Drain to Source Saturation
Voltage vs. Drain Current
5
VGD = 0
Drain to Source Voltage vs.
Gate to Source Voltage
10
C
5°
25
,7
°C
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
VDS (on) (V)
10
°C
25
TC
=–
2
1.0
0.5
0.2
0.1
0.1
0.2
0.5 1.0
2
Drain Current ID (A)
5
10
6
5A
4
2
0
500
200
VDS = 10 V
f = 1 MHz
100
–2
–4
–6
–8
–10
Gate to Source Voltage VGS (V)
2A
ID = 1 A
2
4
6
8
10
Gate to Source Voltage VGS (V)
Forward Transfer Admittance
vs. Frequency
Forward Transfer Admittance  yfs  (S)
Input Capacitance Ciss (pF)
1000
TC = 25°C
8
Input Capacitance vs. Gate
Source Voltage
0
0.4
0.8
1.2
1.6
2.0
Gate to Source Voltage VGS (V)
3.0
1.0
0.3
0.1
0.03
0.01
0.003
10 k
TC = 25°C
VDS = 10 V
ID = 2 A
30 k 100 k 300 k 1 M 3 M
Frequency f (Hz)
10 M
3
2SK1056, 2SK1057, 2SK1058
Switching Time vs. Drain Current
Switching Time ton,toff (ns)
500
t on
200
100
50
t off
20
10
5
0.1
0.2
0.5 1.0
2
Drain Current ID (A)
5
10
Switching Time Test Circuit
Output
RL
Input
PW = 50µs
duty ratio
=1%
20 V
50 Ω
Waveforms
90 %
Input
10 %
t on
t off
10 %
Output
90 %
4
2SK1056, 2SK1057, 2SK1058
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
5